Untitled
Abstract: No abstract text available
Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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LP0701
DSFP-LP0701
A091708
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b0915
Abstract: VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN3205
DSFP-VN3205
B091508
b0915
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Untitled
Abstract: No abstract text available
Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2640
DSFP-TP2640
A091608
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16 pin diagram of lcd display 16x2
Abstract: 1400 mAh nimh charger 9v rechargeable NiMh LM780 16x2 lcd method doc lcd 16x2 14 pin AN022902-0708 lcd display 16x2 data sheet doc lcd 16x2 14 pin INTERNAL CIRCUIT DIAGRAM OF LM324
Text: Application Note Z8 Encore! Based AA Type NiMH and NiCd Battery Charger Reference Design AN022902-0708 Abstract This application note demonstrates AA type NiMH and NiCd battery charger application using 28-pin Z8 Encore!® 8K Series MCU. The battery charger
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AN022902-0708
28-pin
16 pin diagram of lcd display 16x2
1400 mAh nimh charger
9v rechargeable NiMh
LM780
16x2 lcd method
doc lcd 16x2 14 pin
AN022902-0708
lcd display 16x2
data sheet doc lcd 16x2 14 pin
INTERNAL CIRCUIT DIAGRAM OF LM324
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LN1E
Abstract: Marking code mps
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A0912908
LN1E
Marking code mps
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VN2460N8-G
Abstract: TRANSISTOR LIZ
Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN2460
DSFP-VN2460
A102108
VN2460N8-G
TRANSISTOR LIZ
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VN2450N8-G
Abstract: vn4ew
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN2450
DSFP-VN2450
A102108
VN2450N8-G
vn4ew
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LN1E
Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A10310808
LN1E
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b0915
Abstract: n5 sot-89 DN2540N3-G sot-89 marking dn DN5DW
Text: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DSFP-DN2540
B091508
b0915
n5 sot-89
DN2540N3-G
sot-89 marking dn
DN5DW
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vp3203n3-g
Abstract: VP3203
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP3203
DSFP-VP3203
A091508
vp3203n3-g
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Untitled
Abstract: No abstract text available
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2522
125pF
DSFP-TP2522
B091408
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b0914
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2520
125pF
B091408
b0914
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VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
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VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
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TP5L
Abstract: MARKING CODE BV sot-89 marking code sot-89 AA
Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2502
125pF
DSFP-TP2502
A091408
TP5L
MARKING CODE BV sot-89
marking code sot-89 AA
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JN440BX
Abstract: 82371EB 82443BX intel DOC celeron 1998
Text: JN440BX Motherboard Specification Update Release Date: November 1998 Order Number: 704522-007 The JN440BX motherboard may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
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JN440BX
JN440BX
82371EB
82443BX
intel DOC
celeron 1998
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Untitled
Abstract: No abstract text available
Text: DM5885 1 720H Decoder Mix 4 NTSC/PAL Channels to One SD or HD Signal1 1 DAVICOM Semiconductor, Inc. DM5885 720H Decoder Mix 4 NTSC/PAL Channels to One SD or HD Signal 23431567741 Preliminary Version: DM5885-DS-P01 March 7, 2013 Preliminary Doc No: DM5885-DS-P01
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DM5885
DM5885-DS-P01
pin28
pin32)
1234567831529AAAAAAAAAAAodem
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING C IS UNPUBLISHED. C O P Y R I G H T 20 3 RELEASED BY FOR ALL - PUBLICATION RIGHTS 2 2D LOC RESERVED. AA REVISIONS 00 P LTR B C D E q c " o x in10 CO o 0.35 6 LED 2- -LED f 4.57 6.5 2 I .59 E > 6.6 3.05 -6.35 JL -RU RJ8- zTAX t 2.54 5. LED
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30SEP2010
09APR2012
26APR2012
568nm
588nm
I8AUG2006
8AUG2006
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208H
Abstract: No abstract text available
Text: S ch em a tic: r H .j R1 ,R2,R3,R4: 75 OHMS E le ctrica l Specifications: Isolation V oltage: 1500 Vrm s In pu t to O utput Isolation Voltage: 500 Vrm s (P 1 + 2 + 3 to P 4 + 5 + 6 ) Turns Ratio: TX 1CT:1CT ±3 % RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH M inim um @100KHz lODmV 8mADC
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350uH
100KHz
100rnV
300KHz-100MHz)
30MHz
-18dB
80MHz
-70dB
30MHz
208H
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ÂRRÂYS/HEH SIE » 44^503 Ü Ü 1 7 7 3 1 Ô7D IHITS HN62418 Series-T-46-13- 1 5 8M 512K x 16-bit and (1M x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62418 Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x
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HN62418
Series--------T-46-13-
16-bit)
16-bit
42-pin
44-lead
HN62418
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Untitled
Abstract: No abstract text available
Text: D S 3803 PRELIMINARY DALLAS SEMICONDUCTOR DS3803 1024K Flexible NV SRAM SIMM FEATURES PIN ASSIGNMENT • Flexibly organized as 32K x 32, 64K x 16 or 128K x 8 bits _ r ~ • 10 years m inimum data retention in the absence of external power • Nonvolatile circuitry transparent to and independent
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DS3803
1024K
72-PIN
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Untitled
Abstract: No abstract text available
Text: 2 THIS D R A WI N G IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION R|3 H T S LOC REV ISIONS D I ST AA RESERVED. 22 LTR DE S C R I P T I O N DWN DATE APVD REV PER EC OS I I - 02 0 I - 0 4 23JUN2005 LV SF REV PER E C O - 0 7 - 0 0 4 5 8 3
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23JUN2005
02MAR2007
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PBL3717
Abstract: No abstract text available
Text: Tekn ansv.•Technical responsible Uppgtort•Rraparad M/TI1 Bert Thuresson M/TC Dounsv'Godk -Doe rtspont/AporovoO Granskad-Cht&td M/FMC « Dokumentnamn •Document name PRELIMINARY DATASHEET Nr-No Datum -Data 1987-07-28 IRev A S-eC 1 PBL 3717/2 File PBL3717/2.DAT
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PBL3717/2
PBL3717/2
PBL3717
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Precision Potentiometers, Position Sensors
Abstract: 91/157/AET
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book precision potentiometers, Position sensors vishay vse-db0100-1310 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0100-1310
Precision Potentiometers, Position Sensors
91/157/AET
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Untitled
Abstract: No abstract text available
Text: 2 THIS D R A WI N G IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION R|3 H T S LOC AA RESERVED. REV I S I O N S D I ST 22 LTR DE S C R I P T I O N DWN DATE REV PER E CO S I I - 02 0 I - 0 4 28JUL2005 AF APVD
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28JUL2005
108-1163APPLICATION
MAR200Ã
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