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    A9 NPN Search Results

    A9 NPN Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    A9 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd 3y3

    Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
    Text: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0


    Original     		PDF 318MHz AVDD300 DVDD300 VDOUT15 VDOUT14 VDOUT13 VDOUT12 VDOUT11 VDOUT10 ROMA15 smd 3y3 SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd

    d-y59a

    Abstract: SMC D-B73C D-A59W double diode 5341 dh7a1 zener 48v D-J59 DIODE ZENER X ZENER A34 D-H7A1
    Text: Fonction Page 5.3-1 D–C7/C8 D–C73C/C80C D–B5/B6 D–B59W D–A3/A4 D–A3„A/A44A D–A3„C/A44C D–A7/A8 D–A7„H/A80H D–A73C/A80C D–A79W D–A5/A6 D–A59W D–A9/A9„V D–9/9„A D–E7„A/E80A D–Z7/Z8 D–H7 D–H7C D–H7BAL D–H7„F D–H7„W


    Original     		PDF C73C/C80C A3A/A44A A3C/A44C A7H/A80H A73C/A80C E7A/E80A G5W/K59W G39/K39 G39A/K39A F5W/J59W d-y59a SMC D-B73C D-A59W double diode 5341 dh7a1 zener 48v D-J59 DIODE ZENER X ZENER A34 D-H7A1

    conn 20X2

    Abstract: 245-DIR ISA-12V ISP1181 LA18 LA20 q1 npn3904 npn3904 header 20X2 HEADER 6X2
    Text: 1 2 3 4 5 6 ISA-5V CONN2 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 ISA-D7 ISA-D6 ISA-D5 ISA-D4 ISA-D3 ISA-D2 ISA-D1 ISA-D0 ISA-IORDY# ISA-AEN D ISA-A16 ISA-A15 ISA-A14 ISA-A13 ISA-A12


    Original     		PDF ISA-A16 ISA-A15 ISA-A14 ISA-A13 ISA-A12 ISA-A11 ISA-A10 ISP1181-CLKOUT 10uF/16V BLM21A10 conn 20X2 245-DIR ISA-12V ISP1181 LA18 LA20 q1 npn3904 npn3904 header 20X2 HEADER 6X2

    Untitled

    Abstract: No abstract text available
    Text: 9 Transistor I/O Link Module B7A-P P10 Save Space and Reduce Wiring Back to PLC Rack for 10 I/O Points 1 Transmit 10 input signals over just 2 wires 3 wires if only one terminal has a power supply 1 Connect 3-wire NPN output sensors to B7A screw terminal models (two-wire


    Original     		PDF B7A-P10 OUT00 OUT01 OUT02 OUT03 OUT04 OUT05 OUT06 OUT07 OUT08

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    2N3506

    Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
    Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)


    Original     		PDF bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO

    Untitled

    Abstract: No abstract text available
    Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN51V18165B 16bit NN51V18165BL 1005bSD NN51V181

    NN5118160A

    Abstract: NN5118160B WA137
    Text: NN5118160A / NN5118160B series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a DESCRIPTION The NN5118160A / NN5118160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN5118160A / B series is fabricated with advanced CMOS technology and designed with


    OCR Scan     		PDF NN5118160A NN5118160B 16bit NN5118160A/NNS118160B WA137

    nn5118165

    Abstract: NN5118165A
    Text: N E N D C M 5 1 O 1 8 1 H O S 6 y p 5 A e r P x 1 1 M / N a 6 N g b e i t 5 1 M D 1 8 o y n 1 6 d e a m 5 i c B s R e A r i e NPN>a< s M DESCRIPTION T h e NN5118165A / NN5118165B series is a high performance C M O S Dynamic Random Access Memory organized as


    OCR Scan     		PDF NN5118165A NN5118165B N5118165B N5118165A 128ms NN51181 010DM nn5118165

    Untitled

    Abstract: No abstract text available
    Text: NN514170 series Fast Page Mode CMOS 256K X 16bit Dynamic RAM NPN>Â< DESCRIPTION The NN514170 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514170 series is fabricated with advanced CMOS technology and designed


    OCR Scan     		PDF NN514170 16bit NN514170L NN514170XXI 128ms

    Untitled

    Abstract: No abstract text available
    Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN51V18160B 16bit NN51V18160BL 0QQ11CH NN51V181 128ms

    NN514400

    Abstract: No abstract text available
    Text: NN514400/ NN514400A / NN514400B series Fast Page Mode CMOS 1M x 4bit Dynamic RAM NPN a DESCRIPTION The NN514400/A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN514400/A/B series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN514400/ NN514400A NN514400B NN514400/A/B 514400L/AI7BL NN514400 /NN514400Bseries

    Untitled

    Abstract: No abstract text available
    Text: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed


    OCR Scan     		PDF NN514800 NN514800L S12KX NN514800XJ 128ms 512Kx8

    nn514406

    Abstract: No abstract text available
    Text: NN514405A / NN514405Bseries EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN)a( DESCRIPTION The NN514405A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405A/B series is fabricated with advanced CMOS technology and designed with innovative design techniques


    OCR Scan     		PDF NN514405A NN514405Bseries NN514405A/B NN514405AL/BL NNS1440SA NNS1440SBaerà NN514405XXXI 128ms nn514406

    Untitled

    Abstract: No abstract text available
    Text: NN514100A series Fast Page Mode CMOS 4M x 1bit Dynamic RAM NPN a DESCRIPTION The NN514100A series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100A series is fabricated with advanced CMOS technology and designed with innovative design tech­


    OCR Scan     		PDF NN514100A NN514100AL NN5141 128ms NN514100A

    UM66

    Abstract: 1355052 UM3750 ultrasonic piezo speaker infrared security alarm K3G097-AK34-65 melody generator UM66 melody generator UM66T Series UM66T
    Text: UNITE» MICROELECTRONICS U M 6 6 T S e r íe s 3DE D 'iBESflSE 00DD2S1 3 Simple Melody Generator Features Pin Configuration • 62-note ROM memory 1 ■ 1.3V to 3.3V operating voltage and low power con­ UM66 T xxx 85xx sumption ■ Dynamic speaker can be driven w ith an external NPN


    OCR Scan     		PDF UM66T 62-note UM37SO UM66 1355052 UM3750 ultrasonic piezo speaker infrared security alarm K3G097-AK34-65 melody generator UM66 melody generator UM66T Series

    A984

    Abstract: c2274 C2274 E transistor c2274 A984k C2274K 2SC2274 2SA984 VCEO50 transistor 2sc2274
    Text: 2SA984, 984K 2SC2274, 2274K 465F f “ ill PNP/npn E p ita x ia l Planar S ilic o n T ransistors 2 0 03 A Low Frequency Power Amp Applications Features . High breakdown v o l t age V c e o = 5 0 / 8 0 V . . High current (Ic=500mA). . Lo w saturation voltage.


    OCR Scan     		PDF 2SA984, 2SC2274, 2274K 50/80V) 500mA) 2SA984 C2274 A984K C2274K A984 c2274 C2274 E transistor c2274 C2274K 2SC2274 VCEO50 transistor 2sc2274

    Untitled

    Abstract: No abstract text available
    Text: NN514100 series Fast Page Mode CMOS 4 M x 1bit Dynamic RAM NPN a< DESCRIPTION The NN514100 series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100 series is fabricated with advanced CMOS technology and designed


    OCR Scan     		PDF NN514100 NN514100L NN514100XX 128ms

    nn514405

    Abstract: No abstract text available
    Text: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN514405 NN514405B NN514405/B NN514405L/BL NN514405/ 128ms

    BF259

    Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
    Text: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN5116165A/ NN5118165A 16bit NN5116165A/18165A NN5116 65AXX 128ms NN51181

    2SD427

    Abstract: Transistor 2SD427 2SD427R 2sd427 transistor q406 250427 2sd427-r
    Text: 2 s d 427 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o m tn tm m o Power A m p l i f i e r A p p l i c a t i o n s Unit in m m *2 5 .0 MAX, • ^ i' 0 * ia, • &i E t t o : P 0 = sow : v 0EQ = 2 SB 5 5 7 5 0 J K 120V i i t t H i - F i Hr — i * 4 * 7 's T'tti £ S K f t j § T-J-0


    OCR Scan     		PDF 2sd427 2SD427 2SD427â Transistor 2SD427 2SD427R 2sd427 transistor q406 250427 2sd427-r

    2SC3293

    Abstract: SC46 m 5768 2 diode ZENER A8
    Text: Ordering number: EN 13330 N0.1333C 2SC3293 NPN Planar Silicon Darlington Transistor SANYO i Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . Features • High DC current gain.


    OCR Scan     		PDF 1333C l333C 2SC3293 SC46 m 5768 2 diode ZENER A8