STH6NA80FI
Abstract: sth6na80
Text: £ j ï SGS-THOMSON ULKgraMOeS STH6NA80 A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TH 6N A80 S TH 6N A80FI • . . . . . . dss 800 V 800 V RDS on Id < 2 .4 Q. < 2 .4 Q. 5 .4 A 3 .4 A TYPICAL R D S (on) = 1.8 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STH6NA80
STH6NA80FI
A80FI
STH6NA80FI
|
Untitled
Abstract: No abstract text available
Text: STW9NA80 A80FI N - CHANNEL 800V - 0.85ÎÎ - 9.1 A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE S TW 9N A 80 S TH 9N A80FI • . . . . . . V dss R D S o n Id 800 V 800 V < 1 .o n < 1 .o n 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STW9NA80
STH9NA80FI
O-247/ISOWATT218
A80FI
10WATT218
P025C
|
MAX2838
Abstract: No abstract text available
Text: SGS-THOMSON STW8NA80 A80FI M TO »« N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYP E STW 8N A80 S TH 8N A80FI . V dss RDS on Id 800 V 800 V < 1.50 ß < 1.50 Q 7.2 A 4.5 A TYPICAL Rds(oh) = 1.3 Q rn ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STW8NA80
STH8NA80FI
A80FI
MAX2838
|
7na80fi
Abstract: No abstract text available
Text: £jï SGS-THOMSON ULKgraMOeS STH7NA80 A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TH 7N A80 S TH 7N A80FI • . . . . . . V dss RDS on Id 800 V 800 V < 1 .9 il 6.5 A 4 A < 1 .9 il TYPICAL RDS(on) = 1 -68 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
A80FI
STH7NA80
STH7NA80FI
7na80fi
|
9NA80FI
Abstract: No abstract text available
Text: SGS-THOMSON !LiM iO gS STW9NA80 A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss RDS(on Id STW 9N A80 800 V < 1.0 Q 9.1 A S TH 9N A80FI 800 V < 1.0 Q. 5.9 A • rn . . . . . TYPICAL RDS(on) = 0.85 Q ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STW9NA80
STH9NA80FI
A80FI
9NA80FI
|
Untitled
Abstract: No abstract text available
Text: S G S -1H 0M S 0N [MOigœilLiera *® STW8NA80 A80FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 8NA80 S TH 8N A80FI dss 800 V 800 V R d S o ii < 1.50 a < 1.50 a Id 7.2 A 4.5 A • TYPICAL RDS(on) = 1.3 £1
|
OCR Scan
|
PDF
|
STW8NA80
STH8NA80FI
8NA80
A80FI
|
Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N [M O ig œ ilL iera « ® 7 80 80 STW NA STH NA FI 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STW 7N A80 STH 7N A80FI V dss R dS oii Id 800 V 800 V < 1.9 a. < 1.9 Q. 6.5 A 4 A • TYPICAL RüS(on) = 1.68 Cl
|
OCR Scan
|
PDF
|
A80FI
|
C5690
Abstract: 6NA80FI STH6NA80FI 6NA80
Text: S GS-THOMSON !LiM@iO gS STW6NA80 A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW NA80 STH 6N A80FI V dss RDS(on Id 800 V 800 V < 2 .4 Î2 < 2.4 Q 5.4 A 3.4 A . TYPICAL R d s (oh) =0.01 2 Q m AVALANCE RUGGED TECHNOLOGY
|
OCR Scan
|
PDF
|
A80FI
STW6NA80
STH6NA80FI
O-247
ISOWATT218
SC06UQ
C5690
6NA80FI
STH6NA80FI
6NA80
|
stp5n
Abstract: No abstract text available
Text: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 5 N A8 0 F I TYPE STP5NA80 STP5N A80FI • . . ■ ■ . ■ N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on) Id 800 V 800 V < 2.4 a < 2.4 a 4.7 A 2.8 A TYPICAL RDS(on) = 1.8 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STP5NA80
A80FI
stp5n
|
7NA80
Abstract: No abstract text available
Text: S GS-THOMSON !LiM@iO gS STW7NA80 A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW 7NA80 STH 7N A80FI V dss RDS(on Id 800 V 800 V < 1.9 Î2 < 1 . 9 ii 6.5 A 4 A . TYPICAL Ftos(on) = 1.68 Cl rn ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STW7NA80
STH7NA80F
7NA80
A80FI
|
TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON iL iO M K I stp6NAso A80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6N A 80 A80FI • . . ■ ■ . ■ V dss R DS on Id 800 V 800 V < 1.9 a < 1.9 a 5.7 A 3.4 A TYPICAL RDS(on) = 1.68 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
PDF
|
STP6NA80FI
|
A1287
Abstract: D1188 L1208 stw7na80 B1225 DC/AC to DC smps circuit diagram sgs 9960 STH7NA80FI L1557
Text: 1 3 9 -0 2 ^ SGS-TH0MS0N STW7NA80 A80FI HLiSTr[^ ffi!ID©$ N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW7NA80 A80FI • . . . . ■ . Vdss RdS oh 800 V 800 V < 19 a < 19 lo a 65A 4A TYPICAL RDS(on) = 1 68 £2
|
OCR Scan
|
PDF
|
STW7NA80
STH7NA80FI
STW7NA80
STH7NA80FI
A1287
D1188
L1208
B1225
DC/AC to DC smps circuit diagram
sgs 9960
L1557
|