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    A7 BY MARKING Search Results

    A7 BY MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    A7 BY MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking A7

    Abstract: No abstract text available
    Text: Material Declaration M8-1-XXXJ Part Name Total mass: Breakdown of component Substrate Material Name Alumina 0.380g Weight mg 124.7 Conformal Coated SIP Thick Film Resistor Array Thick film Metals and Oxides 6.1 Conformal coat and Marking Epoxy / Acrylic


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    PDF 17-Jan-2007 Marking A7

    Untitled

    Abstract: No abstract text available
    Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMediaTM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia


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    PDF K9S3208V0A-SSB0 SMFV004A

    Untitled

    Abstract: No abstract text available
    Text: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia


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    PDF K9S2808V0A-SSB0 SMFV016A

    SmartMedia Logical Format

    Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
    Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia


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    PDF K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SmartMedia Logical Format ID maker code SmartMedia Physical Format

    l101cxxx

    Abstract: L101S 7631-86-9
    Text: Material Declaration L101CXXX LF Total mass: 0.490g Weight mg Part Name Breakdown of component Material Name RoHS Compliant Substrate Alumina 157.7 Thick film Metals and Oxides 7.82 Conformal Coated SIP Thick Film Resistor Array Conformal coat and Marking


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    PDF L101CXXX 10-Jan-2006 L101S 7631-86-9

    Untitled

    Abstract: No abstract text available
    Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54


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    PDF AS8FLC2M32 MIL-PRF-38534, 64Kbyte AS8FLC2M32B

    Flash

    Abstract: AS8FLC2M32 we3 marking AS8FLC2M32BQ
    Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54


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    PDF AS8FLC2M32 MIL-PRF-38534, 64Kbyte AS8FLC2M32B Flash AS8FLC2M32 we3 marking AS8FLC2M32BQ

    A20-A11

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC2M32 I/O16 I/O17 A20-A11

    AS8FLC2M32

    Abstract: A3760 A20-A11 HIP-66
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF AS8FLC2M32 100ns 120ns I/O14 I/O15 I/O19 I/O20 I/O21 I/O22 I/O23 AS8FLC2M32 A3760 A20-A11 HIP-66

    SMD MARKING CODE WE3

    Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
    Text: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11


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    PDF AS8FLC1M32 I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 I/O17 I/O18 SMD MARKING CODE WE3 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX

    Untitled

    Abstract: No abstract text available
    Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10


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    PDF AS8FLC1M32 MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32B

    MT4C1259

    Abstract: No abstract text available
    Text: MT4C1259 883C 256K x 1 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 256K x 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) 2 /W/E /R/A/S NC AD AZ MARKING • Timing 100ns access 120ns access


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    PDF MT4C1259 MIL-STD-883 18-Pin 150mW 256-cycle 16-Pin MIL-STD-883 DS000015

    MICRON BGA PART MARKING

    Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)


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    PDF MT44K64M18 MT44K32M36 576Mb MT44K32M18 MT44K64M18 MT44K32M36. MT44K32M36RCT-125 MICRON BGA PART MARKING RTT120 MT44K RLDRAM 3 MT44K32M36

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


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    PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


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    PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MICRON BGA PART MARKING

    Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)


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    PDF MT44K64M18 MT44K32M36 576Mb MT44K32M18 MT44K64M18 MT44K32M36. MT44K32M36RCT-125 MICRON BGA PART MARKING MT44K32M36 RTT120 micron power 120w MT44K

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


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    PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    sod-23

    Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
    Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C


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    PDF BAV70 OT-23 OD-23 BAW56 BAV70 BAV99 sod-23 diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


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    PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    Untitled

    Abstract: No abstract text available
    Text: SUPERSEDED BY MT58LC64K18D8 I^IICRDN 64K OPTIONS A6 A7 CE# CE2 NC NC WEH# WEL# CE2# Vcc Vss CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 100-Pin TQFP SA-1 RRRRRRRRRRRRRRRRRRRR • Packages 100-pin TQFP VccQ ra n DQ12 vcc Vcc Nc Œ c n en c n c n DQ13 DQ14 VccQ


    OCR Scan
    PDF MT58LC64K18D8 100-Pin 160-PIN

    MT9068

    Abstract: 30-pin SIMM 64k 30-pin SIMM 64k X 8 30-pin SIMM
    Text: V IIC Z R O N MT9068 DRAM MODULE 64K PIN ASSIGNMENT (Top View Vcc CÄS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 NC NC NC OQ6 W Vss DQ7 NC DQ8 09 RÄ5 CÄS9 D9 Vcc MARKING • Timing 80ns access 100ns access 120ns access 150ns access -15 • Packages:


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    PDF MT9068 30-pin 450mW MT9068 30-pin SIMM 64k 30-pin SIMM 64k X 8 30-pin SIMM

    MT9259

    Abstract: 1259EJ
    Text: I^ IIC Z R O N MT9259 256K X 9 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vdd CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PHD DQ8 09 RAS CSS9 D9 Vdd MARKING • Timing 80ns access 100ns access 120ns access 150ns access


    OCR Scan
    PDF MT9259 30-pin 135mW 1350mW MT9259 1259EJ

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 WIDE DRAM MICRON WIDE DRAM 2 MEG x 8 DRAM 5.0V, FAST-PAGE-MODE (MT4C2M8A1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8


    OCR Scan
    PDF 096-cycle 048-cycle A0-A11;

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T4 L C 2M 8B 1/2 2 MEG X 8 W ID E DRAM I^ IIC R D N WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access


    OCR Scan
    PDF 048-cycle 096-cycle 400mW A0-A10;