HM5264165FTT-A60
Abstract: Hitachi DSA002745
Text: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940A Z Preliminary, Rev. 0.1 Dec. 28, 1998
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HM5264165F-75/A60/B60
HM5264805F-75/A60/B60
HM5264405F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-940A
HM5264165F
64-Mbit
HM5264165FTT-A60
Hitachi DSA002745
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hm5264805ftt75
Abstract: Hitachi DSA00164
Text: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940B Z Rev. 1.0 Nov. 10, 1999 Description
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HM5264165F-75/A60/B60
HM5264805F-75/A60/B60
HM5264405F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-940B
HM5264165F
64-Mbit
hm5264805ftt75
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0135H10 Ver. 1.0 (Previous ADE-203-940B (Z)
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HM5264165F-75/A60/B60
HM5264805F-75/A60/B60
HM5264405F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0135H10
ADE-203-940B
HM5264165F
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HM5264805 Series
Abstract: HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196
Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165D-A60
HM5264805D-A60
HM5264405D-A60
16-bit
PC/100
ADE-203-909
HM5264165D
64-Mbit
1048576-word
HM5264805 Series
HM5264165DTT-A60
sdram 4 bank 4096 16
Hitachi DSA00196
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TSOP II elpida
Abstract: HM5264165FTT-A60 HM5264165F HM5264405F HM5264805F *5264165ftta
Text: EO HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 L 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Pr Description E0135H10 Ver. 1.0 (Previous ADE-203-940B (Z)
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HM5264165F-75/A60/B60
HM5264805F-75/A60/B60
HM5264405F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0135H10
ADE-203-940B
TSOP II elpida
HM5264165FTT-A60
HM5264165F
HM5264405F
HM5264805F
*5264165ftta
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HM5264165DTT-A60
Abstract: ADE-203-909A diode a60 HITACHI HX 2272 Hitachi DSA00280
Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The
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HM5264165D-A60
HM5264805D-A60
HM5264405D-A60
16-bit
PC/100
ADE-203-909A
HM5264165D
64-Mbit
1048576-word
HM5264165DTT-A60
diode a60
HITACHI HX 2272
Hitachi DSA00280
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HM5212165F
Abstract: HM5212165FLTD-75
Text: HM5212165FLTD-75/A60/B60 HM5212805FLTD-75/A60/B60 EO 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM L Description E0180H10 Ver. 1.0 Jul. 17, 2001 Features • • • • • • •
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HM5212165FLTD-75/A60/B60
HM5212805FLTD-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0180H10
HM5212165F
128-Mbit
2097152-w
HM5212165FLTD-75
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Untitled
Abstract: No abstract text available
Text: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword × 4-bit PC/100 SDRAM ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805, HM5216405 are
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HM5216805-A60,
HM5216405-A60,
HM5216805-B60,
HM5216405-B60
PC/100
ADE-203-796B
HM5216805,
HM5216405
HM5216805/5216405-B60
HM5216805
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HM5212165DLTD-A60
Abstract: HM5212165DTD-A60 HM5212805DTD-A60 Hitachi DSA00280 DSA0028092.
Text: HM5212165D-A60 HM5212805D-A60 128M LVTTL interface SDRAM 100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/100 SDRAM ADE-203-987 Z Preliminary, Rev. 0.0 Nov. 30, 1998 Description The Hitachi HM5212165D is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The
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HM5212165D-A60
HM5212805D-A60
16-bit
PC/100
ADE-203-987
HM5212165D
128-Mbit
2097152-word
HM5212805D
HM5212165DLTD-A60
HM5212165DTD-A60
HM5212805DTD-A60
Hitachi DSA00280
DSA0028092.
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HM5212165F
Abstract: HM5212165FTD-75 HM5212165FTD-A60
Text: HM5212165FTD-75/A60/B60 HM5212805FTD-75/A60/B60 EO 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM L Description E0179H10 Ver. 1.0 Jul. 16, 2001 Features • • • • • • • •
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HM5212165FTD-75/A60/B60
HM5212805FTD-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0179H10
HM5212165F
128-Mbit
2097152-word
HM5212165FTD-75
HM5212165FTD-A60
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Untitled
Abstract: No abstract text available
Text: HM5212165FTD-75/A60/B60 HM5212805FTD-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM E0179H10 Ver. 1.0 Jul. 16, 2001 Description The HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The HM5212805F
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HM5212165FTD-75/A60/B60
HM5212805FTD-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0179H10
HM5212165F
128-Mbit
2097152-word
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Untitled
Abstract: No abstract text available
Text: HM5212165FLTD-75/A60/B60 HM5212805FLTD-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM E0180H10 Ver. 1.0 Jul. 17, 2001 Description The HM5212165FL is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The
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HM5212165FLTD-75/A60/B60
HM5212805FLTD-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
E0180H10
HM5212165FL
128-Mbit
2097152-word
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a60 GENERATOR
Abstract: Hitachi DSA00164
Text: HM5212165F-75/A60/B60 HM5212805F-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1048A Z Rev. 1.0 Jan. 31, 2000 Description The Hitachi HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The
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HM5212165F-75/A60/B60
HM5212805F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-1048A
HM5212165F
128-Mbit
2097152-word
a60 GENERATOR
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: HM5212165F-75/A60/B60 HM5212805F-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1048A Z Rev. 1.0 Jan. 31, 2000 Description The Hitachi HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The
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HM5212165F-75/A60/B60
HM5212805F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-1048A
HM5212165F
128-Mbit
2097152-word
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HM5212165F
Abstract: HM5212165FTD-75 HM5212165FTD-A60
Text: HM5212165F-75/A60/B60 HM5212805F-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1048A Z Rev. 1.0 Jan. 31, 2000 Description The Hitachi HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The
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HM5212165F-75/A60/B60
HM5212805F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-1048A
HM5212165F
128-Mbit
2097152-word
HM5212165FTD-75
HM5212165FTD-A60
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Untitled
Abstract: No abstract text available
Text: Laser Line Generator LLG 660 P10 A60 II = 660 nw, 10mW, 60 degree fan angle, Class II CDRH, 0.5 m cable with flying leads • • • • • • • Laser line uniformity up to 95% on 100% of the line External user focus mechanism Photo feedback for optimal power stability up to 500kHz
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500kHz
RS232
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Hitachi DSA002753
Abstract: No abstract text available
Text: HM5212165F-75/A60/B60 HM5212805F-75/A60/B60 [ 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1048 Z Preliminary Rev. 0.0 May. 17, 1999 Description The Hitachi HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The Hitachi HM5212805F is a 128-Mbit SDRAM organized as 4194304-word × 8-bit × 4-bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
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HM5212165F-75/A60/B60
HM5212805F-75/A60/B60
Hz/100
16-bit
PC/133,
PC/100
ADE-203-1048
HM5212165F
128-Mbit
2097152-word
Hitachi DSA002753
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Untitled
Abstract: No abstract text available
Text: PTC thermistors as heating elements Metallized round disks, 12 V Series/Type: B59060 Date: February 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B59060
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Untitled
Abstract: No abstract text available
Text: PTC thermistors as heating elements Metallized round disks, 12 V Series/Type: B59060 Date: February 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B59060
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Untitled
Abstract: No abstract text available
Text: HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank PC/133, PC /100 SD R A M HITACHI ADE-203-940A Z Preliminary, Rev. 0.1
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HM5264165F-75/A60/B60
HM5264805F-75/A60/B60
HM5264405F-75/A60/B60
Hz/100
16-bit
PC/133,
ADE-203-940A
HM5264165F
64-Mbit
1048576-word
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Untitled
Abstract: No abstract text available
Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank PC/100 SDRAM HITACHI ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word x 16-bit x 4 bank. The
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HM5264165D-A60
HM5264805D-A60
HM5264405D-A60
16-bit
PC/100
ADE-203-909A
HM5264165D
64-Mbit
1048576-word
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a1347
Abstract: Switches A1341 7400
Text: Switches and Pushbuttons Coolants Page ftn lM w i and pushbuttons for printed circuits S8de switches A88 SWe switches A80 DuaMn-Rne switches A1341 DuaWn-line switches A3000 Stngie-deck rotary switches/Rotary pulse generator A1353 Pushbutton switches A60 DIP-FIX linka/Switches A1347
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A1341
A3000
A1353
A1347
A23001-G23-D009-X-7400
Switches
7400
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KM49RC2H-A60
Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram
Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words
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KM48RC2H/KM49RC2H
18Mbit
667MHz
SHP-32
KM49RC2H-A60
RDRAM CONCURRENT
KM49RC2H
samsung datecode
samsung concurrent rdram
RC2H-A66
concurrent RDRAM 72 9
concurrent rdram
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Untitled
Abstract: No abstract text available
Text: '•■ÍlF - N i,.- NEC JJPD42S64400, 42S65400 16,777,216 X 4-Bit Dynamic CMOS RAM Preliminary September 1993 NEC Electronics Inc. Description The ¿iPD42S64400 and /JPD42S65400 are 64M-bit dy namic RAMs organized as 16,777,216 words by 4 bits. They are designed to operate from a single +3.3-volt
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JJPD42S64400,
42S65400
iPD42S64400
/JPD42S65400
64M-bit
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