Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).
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PD23C16000LW
16M-BIT
16-BIT
PD23C16000LW
42-pin
44-pin
48-pin
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UPD23C8000XGY-XXX-MKH
Abstract: UPD23C8000XCZ-XXX UPD23C8000XCZ
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).
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PD23C8000X
/512K-WORD
16-BIT
PD23C8000X
42-pin
44-pin
48-pin
UPD23C8000XGY-XXX-MKH
UPD23C8000XCZ-XXX
UPD23C8000XCZ
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upd23c8000
Abstract: UPD23C80
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).
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PD23C8000LX
/512K-WORD
16-BIT
PD23C8000LX
42-pin
44-pin
48-pin
upd23c8000
UPD23C80
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000W 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000W is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).
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PD23C16000W
16M-BIT
16-BIT
PD23C16000W
42-pin
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16040A 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16040A is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C16040A
16M-BIT
16-BIT
PD23C16040A
42-pin
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).
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PD23C32000L
32M-BIT
16-BIT
PD23C32000L
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000A 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µ PD23C32000A is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).
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PD23C32000A
32M-BIT
16-BIT
PD23C32000A
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C32040L
32M-BIT
16-BIT
PD23C32040L
44-pin
48-pin
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442000L-C12X
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.
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PD442000L-X
256K-WORD
PD442000L-X
32-pin
36-pin
442000L-C12X
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 20:27 µPD23C24000 24M-BIT MASK-PROGRAMMABLE ROM 3M-WORD BY 8-BIT BYTE MODE 1.5M-WORD BY 16-BIT(WORD MODE) Description The µPD23C24000 is a 25,165,824 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C24000
24M-BIT
16-BIT
PD23C24000
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/11/2002
PM0547
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29F002T
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/14/2001
PM0547
29F002T
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
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128Mb:
DDR333
MT46V32M4
MT46V16M8
MT46V8M16
256Mb:
128Mx4x8x16DDR333
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MX29F002BQC-70G
Abstract: 29F002T
Text: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
PM0547
MX29F002BQC-70G
29F002T
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W29C020CP90N
Abstract: W29C020CP90Z
Text: W29C020C 256K x 8 CMOS FLASH MEMORY Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 3 FEATURES . 3
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W29C020C
W29C020CP90N
W29C020CP90Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD441000L-X
128K-WORD
PD441000L-X
32-pin
36-pin
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ic-nc
Abstract: d23cxxxxx
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000W 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000W is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).
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PD23C16000W
16M-BIT
16-BIT
PD23C16000W
42-pin
44-pin
48-pin
44-pin
ic-nc
d23cxxxxx
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UPD23C8000XCZ
Abstract: UPD23C8000XCZ-XXX UPD23C8000X d23cxxxxx PD23C8000 UPD23C8000XGY-XXX-MKH UPD23C8000XGX-XXX UPD23C8000XGX UPD23C8000XG5XXX7JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).
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PD23C8000X
/512K-WORD
16-BIT
PD23C8000X
42-pin
44-pin
48-pin
UPD23C8000XCZ
UPD23C8000XCZ-XXX
UPD23C8000X
d23cxxxxx
PD23C8000
UPD23C8000XGY-XXX-MKH
UPD23C8000XGX-XXX
UPD23C8000XGX
UPD23C8000XG5XXX7JF
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d23cxxxxx
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).
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PD23C16000LW
16M-BIT
16-BIT
PD23C16000LW
42-pin
44-pin
48-pin
d23cxxxxx
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).
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PD23C8000LX
/512K-WORD
16-BIT
PD23C8000LX
42-pin
44-pin
48-pin
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ES29LV800EB-70TG
Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
Text: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV800E
8/512K
125oC
16Kbyte
32Kbyte
64Kbyte
15sectors
ES29LV800ET
ES29LV800EB
48-pin
ES29LV800EB-70TG
es29lv800et-70tg
ES29LV800ET-70WC
ES29LV800
ES29LV800E
ES29LV800ET-70TGI
ES29LV800EB-70TGI
ES29LV800ET70TG
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MX29F022T
Abstract: No abstract text available
Text: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%
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MX29F022/022N
55/70/90/120ns
-30mA
16K-Byte
32K-Byte
64K-Byte
DEC/21/1999
PM0556
JUN/14/2001
MX29F022T
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28SF002 256K x 8 FLASH MEMORY 256K x 8 S m artV o lta g e FEATURES 40-Pin TSOP Type I FB-1 A16 A15 A14 A13 A12 A11 A9 A8 WE RP V pp WP NC A7 A6 A5 A4 A3 A2 A1 MARKING • Tim ing (5V V cr/3.3V Vcc) 60ns/90ns access -6 80ns/110ns access -8 100ns/150ns access
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MT28SF002
100ns
110ns,
150ns
40-Pin
60ns/90ns
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • b 111S 4 S OQD771E ORT ■ NRN ADVANCE M IC ü n Q N I sem ico nducto r.inc. MT48LC4M4R1 4 MEG X 4 SDRAM 3.3 VOLT, PULSED RAS, DUAL BANK, SELF REFRESH FEATURES • Fully synchronous; all signals excluding clock enable registered to positive edge of system clock
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OQD771E
MT48LC4M4R1
MT48LC4M4R1TG-12
MT48LC4M4R1
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