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    utc 3845 D

    Abstract: SIEMENS BST siemens eh8 t567 P-DSO-20 SIEMENS BST n 55 80
    Text: Siem ens AG S em iconductor G roup M OS Consumer Electronics Edition Target Specification Document number: , V66100-M692-X-1-7659 . : m az3£Li05 Date: o o T ^ b ib This Material Copyrighted By Its Respective Manufacturer 08.11.94 sei 11.94 Page: ii SDA 5650


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    PDF V66100-M692-X-1 23ShD5 utc 3845 D SIEMENS BST siemens eh8 t567 P-DSO-20 SIEMENS BST n 55 80

    MARKING CODE SMD JW

    Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­


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    PDF T-75-37-07 235b05 82532N-TS PL-CC-68 MARKING CODE SMD JW TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000

    Untitled

    Abstract: No abstract text available
    Text: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064


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    PDF 13N05L SPD13N05L P-T0252 Q67040-S4124 SPU13N05L P-T0251 Q67040-S4116-A2 S35bQ5 Q133777 SQT-89

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


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    PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    BTS 433

    Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
    Text: • ñ23Sb05 D0fllSb2 4 Tfl SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation • Short-circuit protection


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    PDF fl235b05 O-218AB/5 E3Sb05 Q67060-S6951-A2 BTS 433 fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2

    MSC SDA

    Abstract: SDA9092 DS011 DD011
    Text: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory


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    PDF PL-CC-68 Q67100-H8353 535b05 MSC SDA SDA9092 DS011 DD011

    D1233

    Abstract: No abstract text available
    Text: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications


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    PDF 64/72-Bit 64/72V8200GU 64/72V16220GU PC100-compatible PC100 D1S33S4 V8200/16220GU fl23StiDS D1233

    Untitled

    Abstract: No abstract text available
    Text: êûD » • 6555b05 0 0 m cm a H M S I E G 88D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case Kds = 800 V /„ = 5 ,5 A ^DS on = 2 Î2


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    PDF 6555b05 235bQS fl235b05 Q014T47

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


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    PDF fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M

    Untitled

    Abstract: No abstract text available
    Text: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0)


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    PDF KMK0089-9 fi53SbDS D74Abb 160Vdo/9 630Vdc/4 S23Sti05 0074flb7 fl23SL0S 0074flbfl

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability


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    PDF 39S13620TQ-6/-7/-8 cycles/32

    Untitled

    Abstract: No abstract text available
    Text: • A23 SfciGS DDÔ17 3 Ü 7 ST SIEMENS PROFET BTS 734L1 Smart Two Channel Highside Power Switch Product Summary 43 5.0 . 34 Features Overvoltage Protection Vfcb AZ • • • • • Operating voltage Vbb(on) one two parallel 40 4.8 19 20 7.3 19 •


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    PDF 734L1 BTS734U Ml20x

    3tb 50 siemens

    Abstract: No abstract text available
    Text: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4278 G Features • • • • • • • • • • • • Output voltage tolerance < ±2% Very low current consumption Separated reset and watchdog output Low-drop voltage Watchdog Adjustable watchdog activating threshold


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    PDF Q67006 A9291 P-DSO-14-4 AED01550 P-DSO-14-4 A535b05 3tb 50 siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,


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    PDF T2332-XV12-P2-7600 053SbO fl235b05

    m43of

    Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
    Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version


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    PDF PEB2091 PEF2091 013751t, flE35b05 m43of TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209

    C67078-A1104-A2

    Abstract: No abstract text available
    Text: 6fiD D • 6555b05 Q O l t m a H M S I E 6 68D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Voa = 800 V Continuous drain current /„ = 5 ,5 A Draln-source on-reslstance ^ D S o n = 2 £ i Description


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    PDF 6555b05 C67078-A1104-A2 fl535fe C67078-A1104-A2

    Untitled

    Abstract: No abstract text available
    Text: Type ^bs b RdS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 iî ' TO-220 AB C67078-S1313-A3 Maximum Ratings Symbol Parameter Continuous drain current Tc = 9 fapuls rc = 25 'C 36 (AR ^AR £as Avalanche current,limited by 7]max Avalanche energy.periodic limited by


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    PDF O-220 C67078-S1313-A3 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: LH1502, LH1512 SIEM EN S 1 Form A/B, C device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability.


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    PDF LH1502, LH1512 LH1502 18-pln fl535t

    DIODE SMD S44

    Abstract: D1035
    Text: SIEMENS 1-A DC Motor Driver for Servo Driver Applications TLE 4206 Overview Features • • • • • • • • • • Optimized for headlight beam control applications Current-peak-blanking no electrolytic capacitor at Vs Delivers up to 0.8 A continuous


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    PDF Q67000-A9303 P-DIP-16-5 Q67006-A9299 P-DSO-14-4 fl23SbDS D10354fi 87i038 nya8-02-01 DIODE SMD S44 D1035

    TSOP 50 Package

    Abstract: 3165160AT A42F TOSHIBA D 799 Q67100-Q1552 3166160AT
    Text: SIEM ENS 4M X 16-Bit Dynamic RAM 8k, 4k & 2k-Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 "C operating temperature • Fast Page Mode operation


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    PDF 16-Bit 3164160AT 3165160AT 3166160AT S35tiDS 160AT TSOP 50 Package A42F TOSHIBA D 799 Q67100-Q1552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    PDF Q67100-H5102 E1414 023SbG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C


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    PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05

    A6 9008 ADM

    Abstract: sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A
    Text: SIEM ENS 8-Bit CMOS Microcontroller C517A Advanced Inform ation Full upward com patibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers


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    PDF C517A 80C517A/83C517A-5 NL-2500 S-164 0S35bG5 A6 9008 ADM sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A

    e1414

    Abstract: siemens master drive circuit diagram Siemens pulse sequence
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    PDF 25X26-5 25X26 Q67100-H5095 Q67100-H3253 Q67100-H3257 Q67100-H3258 E1414 023SbG5 siemens master drive circuit diagram Siemens pulse sequence