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    A35 DIODE Search Results

    A35 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    A35 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A35 diode

    Abstract: A35 equivalent 443E-01 D1809N
    Text: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1809N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften


    Original     		PDF D1809N A35/94 A35 diode A35 equivalent 443E-01 D1809N

    A35 diode

    Abstract: No abstract text available
    Text: SKT 240 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 240 Features  


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    Untitled

    Abstract: No abstract text available
    Text: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      


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    semikron skt 240

    Abstract: thyristor bridge circuit skt semikron thyristor SKT 240
    Text: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      


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    Untitled

    Abstract: No abstract text available
    Text: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      


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    semikron thyristor skt

    Abstract: thyristor SKT 240 semikron thyristor semikron skt 240 thyristor skt thyristor semikron thyristor application thyristor scr SCR, SEMIKRON skt semikron
    Text: SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 240 Features                                                      


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    zener diode A29

    Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
    Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)


    Original     		PDF CAZ59C2V7 CAZ59C51 SC-59 MIL-STD-202, J-STD-020C CAZ59CXVX zener diode A29 ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode

    zener diode A36

    Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
    Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)


    Original     		PDF CAZ23C2V7 CAZ23C51 OT-23 MIL-STD-202, J-STD-020C CAZ23CXVX zener diode A36 zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26

    700-PK400A1

    Abstract: 700-PK400-A1 199-FSMA11 NEMA P600 199-FSMA10 4 pole relay
    Text: Bulletin 700 Control Relays Type P, PK, and PH Bulletin 700 S S S S Cat. No. 700-P400A1 Cat. No. 700DC-P200 S Cat. No. 700-PK400A1 Cat. No. 700-PH200 S Direct Drive Convertible Contact Cartridge Relays Type P, PK, and PH 600V Maximum AC/DC Overlapping Contact


    Original     		PDF 700-P400A1 700DC-P200 700-PK400A1 700-PH200 700-CP1 700-CPM 700-CPH 700-CPR 700-PS, 700-N31 700-PK400A1 700-PK400-A1 199-FSMA11 NEMA P600 199-FSMA10 4 pole relay

    20N120

    Abstract: IC IGBT 20N120
    Text: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ


    Original     		PDF 20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283 7.2 0.260(6.6) For surface mounted applications.


    Original     		PDF FM301 FM307 MIL-S-19500 DO-214AB MIL-STD-750,

    DIODE marking code A34

    Abstract: A35 diode DIODE A34 A37 diode a35 marking code marking A33 marking codes A32 FM301 marking code A35 diode FM303
    Text: A31-A37 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6)


    Original     		PDF A31-A37 MIL-S-19500 DO-214AB MIL-STD-750, DIODE marking code A34 A35 diode DIODE A34 A37 diode a35 marking code marking A33 marking codes A32 FM301 marking code A35 diode FM303

    DIODE A34

    Abstract: A37 diode DIODE marking code A34 A35 diode a35 marking code marking codes A32 FM301 FM302 FM303 FM304
    Text: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.


    Original     		PDF FM301 FM307 MIL-S-19500 DO-214AB MIL-STD-750, DIODE A34 A37 diode DIODE marking code A34 A35 diode a35 marking code marking codes A32 FM302 FM303 FM304

    DIODE A34

    Abstract: DIODE marking code A34 A37 diode A35 diode marking codes A32 FM301 FM302 FM303 FM304 FM305
    Text: Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.


    Original     		PDF FM301 FM307 MIL-S-19500 DO-214AB MIL-STD-750, DIODE A34 DIODE marking code A34 A37 diode A35 diode marking codes A32 FM302 FM303 FM304 FM305

    IC IGBT 20N120

    Abstract: IXDH20N120AU1 ixdh20n120au 20N120
    Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW


    Original     		PDF 20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au

    marking B43 diode SCHOTTKY

    Abstract: mosfet a06 marking B26 diode SCHOTTKY marking B34 diode SCHOTTKY LGS260-DO DIODE B93 950554-00x marking B47 diode SCHOTTKY diode marking j35 be1 marking diode
    Text: 5 4 3 2 1 Evaluation Platform System Electronic s Board D D Revision D THIS SCHEMATIC IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER,NCLUDING I ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY PARTICULAR PURPOSE , OR ANY WARRANTY OTHERWISE ARISING OUT OF PROPOSAL, SPECIFICATION OR


    Original     		PDF 400PIN marking B43 diode SCHOTTKY mosfet a06 marking B26 diode SCHOTTKY marking B34 diode SCHOTTKY LGS260-DO DIODE B93 950554-00x marking B47 diode SCHOTTKY diode marking j35 be1 marking diode

    a35 marking code

    Abstract: MARKING CODE A37 A37 diode marking A32 markING CODE A35 marking codes A32 50V-1000V FM301 FM302 FM303
    Text: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 List List. 1 Package outline. 2


    Original     		PDF FM301 FM307 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. a35 marking code MARKING CODE A37 A37 diode marking A32 markING CODE A35 marking codes A32 50V-1000V FM302 FM303

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip General Purpose Rectifiers FM301-B THRU FM307-B List List. 1 Package outline. 2


    Original     		PDF FM301-B FM307-B MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information GaAs ' Diodes Contents 1 TO-220 AC Current i %* >> 1 • a C K d y v S l y 1C ^DC TO-220 AB 2 V A V 150/180 150/180 10 20 1.1 0.9 DGS10 DGS20 A A 1.1 0.9 DGSK20 DGSK40 A A 1.5 1.1 DGS10 DGS20 A A 1.5 1.1 DGSK20 DGSK40 A A z 150/180


    OCR Scan     		PDF DGS10 DGS20 DGSK20 DGSK40 DGSK40 O-220

    MB12A35V60

    Abstract: MB11A06 MB11A02V60 MB11A02V80 MB11A06V40 MB11A01V20 MB11A06V80 MB11A02V20 a06 801 MB12A10V
    Text: POW EREX IN C ~ T L I> F | 0001333 7 f 7“ - z 3 - 0 7 Thyristor and Diode Modules Single Phase Diode Modules toe@ Tc Am ps (°C) Vrrm (Volts) I fsm (Am ps) trr (typica l) (lisec) VlSOL (V r us) Package Type No. 1.5 50 50 50 — 1500 A01 MB11A01V05 1.5


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)


    OCR Scan     		PDF A3bflb02 MIL-S-19500 SDF17N60

    Untitled

    Abstract: No abstract text available
    Text: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous


    OCR Scan     		PDF SDF17N60 MIL-S-1950- IF-17A i/dt-100A/

    BSN3005L

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain


    OCR Scan     		PDF BSN3005L 7110aeb 011004b 711002b BSN3005L

    BSN3005L

    Abstract: A35 diode
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL etc. 3 d drain DESCRIPTION


    OCR Scan     		PDF BSN3005L 711002b 0110D4b 711DfiEbi 011DD4? BSN3005L A35 diode