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    A3 MARKING DIODE Search Results

    A3 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    A3 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C2C36

    Abstract: VPW09197 BAS21U SC74
    Text: BAS21U Silicon Switching Diode Array 5 4 6  For high-speed switching applications  Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74


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    BAS21U VPW09197 EHA07291 EHB00028 Aug-07-2001 C2C36 VPW09197 BAS21U SC74 PDF

    marking 6c1

    Abstract: BAS16U SC74
    Text: BAS16U Silicon Switching Diode Array 5  For high-speed switching applications 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74


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    BAS16U VPW09197 EHA07291 Jul-06-2001 EHB00025 EHB00022 marking 6c1 BAS16U SC74 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS 16U Silicon Switching Diode Array  For high-speed switching applications 5 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74


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    VPW09197 EHA07291 SC-74 Apr-21-1999 EHB00025 EHB00022 PDF

    SC74

    Abstract: JSs diode
    Text: BAS 21U Silicon Switching Diode Array  For high-speed switching applications 5 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74


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    VPW09197 EHA07291 SC-74 Apr-16-1999 EHB00029 EHB00027 SC74 JSs diode PDF

    Device Marking A3

    Abstract: 1N4448WS
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON EPITAXIAL FAST SWITCHING DIODE 1N4448WS SOD-323 PLASTIC PCAKAGE Marking 1N4448WS= A3 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage


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    1N4448WS OD-323 1N4448WS= C-120 1N4448WSRev301004E Device Marking A3 1N4448WS PDF

    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


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    OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3 PDF

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


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    CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol


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    1SS181 OT-23 100mA PDF

    1SS181

    Abstract: No abstract text available
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC


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    1SS181 OT-23 100mA 1SS181 PDF

    marking CODE A3

    Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application


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    1SS181 OT-23 100mA marking CODE A3 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3" PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


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    OT-23 1SS181 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


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    CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4448W PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-123 MARKING: T5 & A3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


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    1N4448W OD-123 100mA 150mA PDF

    smd diode marking A3 sot23

    Abstract: DIODE smd marking A3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2 High-Speed Switching Dual Diodes, Common Anode


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    ISO/TS16949 CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 smd diode marking A3 sot23 DIODE smd marking A3 PDF

    chip Marking 3A3

    Abstract: Diode BGX50A BGX50A VPS05178
    Text: BGX50A Silicon Switching Diode Array 3  Bridge configuration  High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    BGX50A VPS05178 EHA00007 OT143 EHB00147 EHB00148 Jul-31-2001 EHB00149 chip Marking 3A3 Diode BGX50A BGX50A VPS05178 PDF

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 MARKING 61s
    Text: BAR60, BAR61 Silicon PIN Diodes 3  RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3


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    BAR60, BAR61 BAR60 VPS05178 EHA07013 EHA07014 OT143 a3 sot143 BAR60 BAR61 VPS05178 MARKING 61s PDF

    DFN633

    Abstract: d206l
    Text: Package information - DFN633 Surface mounted, 6 pin package Package outline e b D L D2 06L T/SLP 3x3mm E E2 PIN 1 DOT BY MARKING PIN #1 IDENTIFICATION CHAMFER 0.300X45’ e1 TOP VIEW BOTTOM VIEW A A3 A1 SIDE VIEW DIM Millimeters Inches Min. Max. Min. Max.


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    DFN633 300X45' DFN633 d206l PDF

    VPS05604

    Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
    Text: BAT 18-04S Silicon PIN Diode Preliminary data 4 5  Low-loss VHF / UHF switch above 10 MHz 6  PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package


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    18-04S VPS05604 EHA07464 OT-363 100MHz EHD07019 EHD07020 Dec-16-1999 VPS05604 DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3 PDF

    Vishay diodes code marking

    Abstract: Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab
    Text: VISHAY Vishay Semiconductors Marking of Diodes 8 7 6 5 GMDA05-6 Pin 1 1 2 3 4 18954 18583 Figure 4. SO-8 Figure 1. DO-214 L4 A3 View from top R9 F5 Date code: R = Year 9 = Month Cathode band Type code Date code 18920 Figure 5. SOD-123 Type code View from top


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    GMDA05-6 DO-214 OD-123 LLP75-6A OD-323 DO-219AB) 28-Apr-04 BZW03C27 DO-41 OD-64 Vishay diodes code marking Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab PDF

    transistor a1241

    Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
    Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363


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    VPS05604 Q62702-A1241 OT-363 Apr-24-1998 EHB00025 EHB00022 transistor a1241 A1241 transistor a1241 datasheet VPS05604 5-30K PDF

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013
    Text: BAR 60, BAR 61 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz 4 BAR 60 2 BAR 61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR 60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT-143 BAR 61 61s


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    VPS05178 EHA07013 EHA07014 OT-143 EHD07070 EHD07071 Oct-05-1999 BAR60 EHM07025 a3 sot143 BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013 PDF

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si2303DS O-236 OT-23) S-49557--Rev. 27-Apr-98 A3 MARKING CODE PDF

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan
    OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 PDF

    JR MARKING

    Abstract: No abstract text available
    Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value


    OCR Scan
    IMBD4448 OT-23, OT-23 JR MARKING PDF