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    A3 MARKING DIODE Search Results

    A3 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    A3 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2C36

    Abstract: VPW09197 BAS21U SC74
    Text: BAS21U Silicon Switching Diode Array 5 4 6  For high-speed switching applications  Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74


    Original     		PDF BAS21U VPW09197 EHA07291 EHB00028 Aug-07-2001 C2C36 VPW09197 BAS21U SC74

    marking 6c1

    Abstract: BAS16U SC74
    Text: BAS16U Silicon Switching Diode Array 5  For high-speed switching applications 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74


    Original     		PDF BAS16U VPW09197 EHA07291 Jul-06-2001 EHB00025 EHB00022 marking 6c1 BAS16U SC74

    Untitled

    Abstract: No abstract text available
    Text: BAS 16U Silicon Switching Diode Array  For high-speed switching applications 5 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74


    Original     		PDF VPW09197 EHA07291 SC-74 Apr-21-1999 EHB00025 EHB00022

    SC74

    Abstract: JSs diode
    Text: BAS 21U Silicon Switching Diode Array  For high-speed switching applications 5 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74


    Original     		PDF VPW09197 EHA07291 SC-74 Apr-16-1999 EHB00029 EHB00027 SC74 JSs diode

    Device Marking A3

    Abstract: 1N4448WS
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON EPITAXIAL FAST SWITCHING DIODE 1N4448WS SOD-323 PLASTIC PCAKAGE Marking 1N4448WS= A3 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage


    Original     		PDF 1N4448WS OD-323 1N4448WS= C-120 1N4448WSRev301004E Device Marking A3 1N4448WS

    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


    Original     		PDF OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		PDF CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3

    Untitled

    Abstract: No abstract text available
    Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol


    Original     		PDF 1SS181 OT-23 100mA

    1SS181

    Abstract: No abstract text available
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC


    Original     		PDF 1SS181 OT-23 100mA 1SS181

    marking CODE A3

    Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application


    Original     		PDF 1SS181 OT-23 100mA marking CODE A3 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		PDF OT-23 1SS181 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		PDF CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302

    Untitled

    Abstract: No abstract text available
    Text: 1N4448W PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-123 MARKING: T5 & A3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF 1N4448W OD-123 100mA 150mA

    smd diode marking A3 sot23

    Abstract: DIODE smd marking A3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2 High-Speed Switching Dual Diodes, Common Anode


    Original     		PDF ISO/TS16949 CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 smd diode marking A3 sot23 DIODE smd marking A3

    chip Marking 3A3

    Abstract: Diode BGX50A BGX50A VPS05178
    Text: BGX50A Silicon Switching Diode Array 3  Bridge configuration  High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BGX50A VPS05178 EHA00007 OT143 EHB00147 EHB00148 Jul-31-2001 EHB00149 chip Marking 3A3 Diode BGX50A BGX50A VPS05178

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 MARKING 61s
    Text: BAR60, BAR61 Silicon PIN Diodes 3  RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3


    Original     		PDF BAR60, BAR61 BAR60 VPS05178 EHA07013 EHA07014 OT143 a3 sot143 BAR60 BAR61 VPS05178 MARKING 61s

    DFN633

    Abstract: d206l
    Text: Package information - DFN633 Surface mounted, 6 pin package Package outline e b D L D2 06L T/SLP 3x3mm E E2 PIN 1 DOT BY MARKING PIN #1 IDENTIFICATION CHAMFER 0.300X45’ e1 TOP VIEW BOTTOM VIEW A A3 A1 SIDE VIEW DIM Millimeters Inches Min. Max. Min. Max.


    Original     		PDF DFN633 300X45' DFN633 d206l

    VPS05604

    Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
    Text: BAT 18-04S Silicon PIN Diode Preliminary data 4 5  Low-loss VHF / UHF switch above 10 MHz 6  PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package


    Original     		PDF 18-04S VPS05604 EHA07464 OT-363 100MHz EHD07019 EHD07020 Dec-16-1999 VPS05604 DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3

    Vishay diodes code marking

    Abstract: Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab
    Text: VISHAY Vishay Semiconductors Marking of Diodes 8 7 6 5 GMDA05-6 Pin 1 1 2 3 4 18954 18583 Figure 4. SO-8 Figure 1. DO-214 L4 A3 View from top R9 F5 Date code: R = Year 9 = Month Cathode band Type code Date code 18920 Figure 5. SOD-123 Type code View from top


    Original     		PDF GMDA05-6 DO-214 OD-123 LLP75-6A OD-323 DO-219AB) 28-Apr-04 BZW03C27 DO-41 OD-64 Vishay diodes code marking Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab

    transistor a1241

    Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
    Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363


    Original     		PDF VPS05604 Q62702-A1241 OT-363 Apr-24-1998 EHB00025 EHB00022 transistor a1241 A1241 transistor a1241 datasheet VPS05604 5-30K

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013
    Text: BAR 60, BAR 61 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz 4 BAR 60 2 BAR 61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR 60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT-143 BAR 61 61s


    Original     		PDF VPS05178 EHA07013 EHA07014 OT-143 EHD07070 EHD07071 Oct-05-1999 BAR60 EHM07025 a3 sot143 BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303DS O-236 OT-23) S-49557--Rev. 27-Apr-98 A3 MARKING CODE

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    JR MARKING

    Abstract: No abstract text available
    Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value


    OCR Scan     		PDF IMBD4448 OT-23, OT-23 JR MARKING