Untitled
Abstract: No abstract text available
Text: Rev: 002 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features Beam Angle: 120˚ Precondition : JEDEC Level 2a Dimension : 2.3 x 2.3 x 0.7 mm ESD withstand Voltage : up to ± 5KV [HBM] Reliability Test : LM-80 qualified Applications
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LM231A
LM-80
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Untitled
Abstract: No abstract text available
Text: Rev: 007 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features Beam Angle : 120˚ Precondition : JEDEC Level 2a Dimension : 2.3 x 2.3 x 0.7 mm ESD withstand Voltage : up to ± 5KV [HBM] Reliability Test : LM-80 qualified
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LM231A
LM-80
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SPMWHT
Abstract: No abstract text available
Text: Rev: 003 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features Beam Angle : 120˚ Precondition : JEDEC Level 2a Dimension : 2.3 x 2.3 x 0.7 mm ESD withstand Voltage : up to ± 5KV [HBM] Reliability Test : LM-80 qualified Applications
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LM231A
LM-80
SPMWHT
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R6016
Abstract: ss88 R2210 SS555 SS200-27 R14-12 j 6806 R1412 SS608 SS14-12
Text: JR（車両）用圧着端子 •裸端子（ SS形） T F E L φd2 B φd1 JRS図番 ED564460 形 裸 端 子 ︵ S S 形 ︶ 68 JRS JST SS1.25-3 SS1.25-4 SS1.25-5 SS1.25-6 SS1.25-8 SS2-3 SS2-4 SS2-5 SS2-6 SS2-8 SS2-10 R1.25-3 R1.25-4 R1.25-5 1.25-6 1.25-8
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JRSED564460
SS2-10
SS8-10
SS14-5
SS14-6
SS14-8
SS14-10
SS14-12
SS22-5
SS22-6
R6016
ss88
R2210
SS555
SS200-27
R14-12
j 6806
R1412
SS608
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SGTL5000 32QFN
Abstract: MMA8541 U84A
Text: 5 4 3 2 1 TWR-MPC8309 Schematic SCHEMATIC PAGE DESCRIPTION: D MAJOR REVISION HISTORY: 01: Cover 02: Reset, Clock and Switch 03: DDR2 and NOR Flash Memory 04: eLBC, Latch, Buffer and Logics 05: Display, SD Card and CAN 06: Ethernet Interface and Clock 07: Ethernet PHYs and RJ45
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TWR-MPC8309
RS485,
RS232
IEEE1588,
100nF
MMBT4401LT1G
MBRM140
100nF
MIC2505-1YM
SGTL5000 32QFN
MMA8541
U84A
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LT 5212
Abstract: 5S30
Text: 2 13 I— T— 1 PRODUCT NUMBER SEE NOTE 2S3 140.46 5.S30 REF J g J SIDE IN - \ ^ ¡J- _ in QJI" X inn < O o X 1 LI lu. Ô1Ô/.29 BOTH SIOES ROW 12 11 ROW ROW < C 20 ROW 40 ROW ROW 31 ROW 30 48 47 : |““5“!^?ÍÍ!ÍU“ÍJIJU1I“1JUUJ |UUSUU utrgtrI
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b2/26/94
P2/26/94
P2/26/9^
P3/26/94
ta/26/94
pz/26/94
LT 5212
5S30
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AN-1203
Abstract: AM Transmitter block diagram tag e9
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter p s u f f ix if II li PLASTIC DIP I HI CASE 707 The M C14497 is a PCM rem ote control tra nsm itte r realized in CMOS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the
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MC14497
C14497
MC3373
DL128/D)
MC14497.
AN-1203
AM Transmitter block diagram
tag e9
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1240 ringer
Abstract: No abstract text available
Text: Temic U3760MB Semiconductors Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.
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U3760MB
U3760MB,
D-74025
19-Feb-98
1240 ringer
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Untitled
Abstract: No abstract text available
Text: . ^ 2 » pfil M IT S U B IS H I HIGH SPEED CMOS ^ M74HC4515P/FP/DWP -c*\s'* * -at« * l-O F -1 6 D E C O D E R /D E M U L T IP L E X E R W IT H AD D R ESS LA T C H “ L ” L E V E L O U T P U T DESCRIPTION PIN The M74HC4515 is a semiconductor integrated circuit con
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M74HC4515P/FP/DWP
M74HC4515
16-line
74LSTTL
14P2P
14-PIN
16P2P
16-PIN
20P2V
20-PIN
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Untitled
Abstract: No abstract text available
Text: iÎIÜÎËL U2538B m m am am am m W I R E L E S S S, tiC IR Receiver for Data Communication Description T he IC U 2538B is a com plete IR receiver for data com m unication. The useful input signals are separated by a special input circuit and am plified by a gain-controlled
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U2538B
2538B
28-Sep-00
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Y12t
Abstract: No abstract text available
Text: M ITSU B ISH I HIGH SPEED CMOS M 74H C 4514P/FP/D W P »bV ' •i'"s * ■ l-O F -1 6 D E C O D E R /D E M U L T IP L E X E R W IT H ADDR ESS LA TC H “ H” L E V E L O U T P U T DESCRIPTION PIN T h e M 7 4 H C 4 5 1 4 is a sem iconductor in teg rated circuit con
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4514P/FP/D
Y12t
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A2JD
Abstract: MC6850 equivalent MC6850
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCI 4469 Addressable Asynchronous Receiver/Transmitter CMOS The MC14469 receives one or two 11-bit words in a serial data stream. One of the incoming words contains the address and when the address matches, the MC14469 then transmits information in two 11-bit word data streams. Each of
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MC14469
11-bit
b3b7E53
A2JD
MC6850 equivalent
MC6850
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74HC154P
Abstract: ic 74ls154
Text: M IT S U B IS H I HIGH SPEED CMOS & M74HC154P/FP/DWP • <5^ iS •V°'' *» Sp^ ‘ ■dS»1* ■ o*»* l-O F -1 6 D E C O D E R /D E M U L T IP L E X E R DESCRIPTION T h e M 7 4 H C 1 5 4 is a sem iconductor in teg ra te d circuit con PIN CONFIGURATION TOP VIEW
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M74HC154P/FP/DWP
74HC154P
ic 74ls154
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74HC147D
Abstract: 74HC147P
Text: M IT S U B IS H I HIGH SPEED CMOS M 74H C 147P /FP /D P 1 0-L IN E D E C IM A L TO 4 -L IN E BCD P R IO R IT Y ENCODER DESCRIPTION T h e M 7 4 H C 1 4 7 is a s e m ic o n d u c to r in te g ra te d c irc u it c o n s is tin g of a 1 0 -lin e d e c im a l to 4 -lin e
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Untitled
Abstract: No abstract text available
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION T H E TC514100A is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514410ASJ/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit
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---------------TC514100ASJ/AZ/AFT60/70/80
TC514100A
TC514410ASJ/AZ/AFT
300mil)
TC51400/ASJ/AZ/AFT.
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI > « HY51V17804C,HY51 V16804C 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY51V17804C
V16804C
A0-A11)
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tc571000
Abstract: TC571000AD-150 AD-12 TC571000AD TC571001 TC571001AD-15 AD12
Text: Im* %-ï 131,072 W ORD X 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY M EM O RY DESCRIPTION The TC671000AD/TC571001AD 1» a 131,072 word X 8 bit CMOS ultraviolet light erai&ble and electrically programmable read only memory. The TC571000AD is JEDEC standard pin configuration and ths TC571001AD it compatible
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TC671000AD
/TC571001AD
TC571001AD
/TC671001AD
30mA/8
120ns/150ns.
TC671000AD/TC671001AD
TC671000AD/TC671001AD.
tc571000
TC571000AD-150
AD-12
TC571000AD
TC571001
TC571001AD-15
AD12
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 KM44C1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its
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KM44C1000BL
KM44C1000BL
KM44C100QBL-6
110ns
KM44C1000BL-7
130ns
KM44C1OOOBL-8
150ns
20-LEAD
7Tb4142
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC TELECOM bSE D b3b?253 Q0ÖS3Q0 7T2 «M 0T5 MC34001, MC35001 MC34002, MC35002 MC34004, MC35004 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA JFET Input Operational Amplifiers These low cost JFET Input operational amplifiers combine two state-of-the-art
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MC34001,
MC35001
MC34002,
MC35002
MC34004,
MC35004
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RDR724Ö 002ñfl40 544 TC551001BPL/BFL/BFTL/BTRL-70/85 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low
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RDR724Ã
TC551001BPL/BFL/BFTL/BTRL-70/85
TC551001BPL
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Untitled
Abstract: No abstract text available
Text: W24258/LL i.lV in b o n d ^ Æ rtP 1 E lectronics Corp. 32K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24258/LL is a normal speed, very low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high
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W24258/LL
W24258/LL
28-pin
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macron lc 28
Abstract: No abstract text available
Text: ADVANCE |W |f* D Q |V | I MT58LC32K36F5 32K X 36 SYNCHRONOUS SRAM SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND LATCHED OUTPUTS FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9,12 and 15ns
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MT58LC32K36F5
100-lead
32-bit
2S-32]
macron lc 28
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HY51V17404A
Abstract: HY51V17404AJ60 00045n
Text: HY51V17404A Series • H Y U N D A I 4 M X 4-b it CMOS DRAM W ith Extended Data O ut DESCRIPTION The HY51V17404Aisthe new generation andfast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17404A
HY51V17404AÃ
0004S1Ã
1AD40-00-MAY95
HY51V17404AJ
HY51V17404ASLJ
HY51V17404AT
HY51V17404AJ60
00045n
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MC141511T2
Abstract: 121-462 MC141511
Text: M O TO R O LA Order th is docum ent by MC141511/D SEMICONDUCTOR TECHNICAL DATA M C 141511 Advance Information LCD Segm ent Driver MC141511T2 TAB CMOS The MC141511 is a LCD frontplane segment driver chip which includes a 656 x 8 display RAM. The MC68HC05L10 microcomputer is the companion
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MC141511/D
MC141511
MC68HC05L10
MC68HC05L10,
MC141511,
5248-pixel
uxed-by-41
4096-pixel
xed-by-32
MC141511s.
MC141511T2
121-462
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