D21C
Abstract: dg211bdy DG212BDJ 212B
Text: Tem ic DG211B/212B S e m i c o n d u c t o r s Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • • ± 22-V Supply Voltage Rating TTL and CMOS Compatible Logic
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DG211B/212B
DG211/2
DG211B/212B
S-52896--
14-Jul-97
D21C
dg211bdy
DG212BDJ
212B
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S01Cb
Abstract: Si9750 Si9750CY
Text: T em ic SÌ9750 S e m i c o n d u c t o r s In-Rush Current Limit MOSFET Driver Features • 2.9- to 13-V Input O perating Range • M icroprocessor R E S E T • • Integrated H igh-S ide D river fo r N -C hannel M O SFET Program m able di/dt C urrent Description
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Si9750
S-51157â
27-Jan-97
A2S473S
0021t
A2S4735
a021bbl
S01Cb
Si9750CY
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DIODE S4 74
Abstract: DIODE S4 41 J141 DIODE S4 72 P-37016 Sj 33 diode
Text: T em ic SÌ9711CY_ Siliconix PCMCIA Interface Switch Features • • Single SO -16 Package CM OS Inputs with H ysteresis • E xtremely L ow R o n • • R everse Blocking Switches H i-Z O utputs in th e O ff-State • • L o w Pow er C onsum ption
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9711cy
SO-16
9711CY
p-37016
fl25M735
DIODE S4 74
DIODE S4 41
J141
DIODE S4 72
Sj 33 diode
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ
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9405DY
Si9430DY
Si6447DQ
S-47958--
15-Apr-96
S2SM735
0017flin
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AES473S
Abstract: AN208 DG213 DG213DJ DG213DQ DG213DY EEG Block diagram
Text: Tem ic DG213 S e m i c o n d u c t o r s Quad Complementary CMOS Analog Switch Features Benefits • ± 22-V Supply Voltage Rating • TTL and CMOS Compatible Logic • • • • • • • • Low On-Resistance— it>s on : 45 Q • • • • Low Leakage—Io(on): 20 pA
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dg213
DG213
S-52880â
28-Apr-97
A2SM73S
00E137S
AES473S
AN208
DG213DJ
DG213DQ
DG213DY
EEG Block diagram
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DG428
Abstract: DG428AK DG428DJ DG428DN DG429 E-76983 d22q
Text: Tem ic DG428/429 Semicon ductors Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers. Features Benefits • L o w ros on : 5 5 Q • Im p roved S y s te m A ccu ra cy D a ta A c q u isitio n S y stem s • L o w C harge Injection: • M icro p ro cesso r B u s C om p atib le
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DG428/429
DG428/DG429
DG428s
16-line
E-76983
30-Jun-97
D22QH3
DG428
E-76983â
DG428AK
DG428DJ
DG428DN
DG429
d22q
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si9950
Abstract: DG601DY DG601 VTM1 DG601DJ DG601AK CH32-C Group30
Text: S ilic o n ix DG601 A M e r a b e r o f th e T e m IC G r o u p High-Speed Quad CMOS Analog Switch Features Benefits Applications • • • • • • • • • • • • • • • • Fast Switching A ction— toN* 30 ns L o w O n-R esistance— rQ ^on : 20 Q
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DG601
DG601
CH16C
CH32C
P-32167â
AES473S
DDni34
si9950
DG601DY
VTM1
DG601DJ
DG601AK
CH32-C
Group30
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SMP60N06
Abstract: SMP60N06-14 SUP60N06-14 FH100
Text: T em ic SMP60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V o s V T D S (o n ) ( £ 2 ) I d (A ) 60 0 .0 1 4 60 See lower-cost version: SUP60N06-14 T O -2 2 Q A B o D R A IN connected to TA B
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SMP60N06-14
SUP60N06-14
O-22QAB
P-36737â
ES4735
SMP60N06
SMP60N06-14
FH100
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VN1206L
Abstract: VNI210M VN1206M VN1210M
Text: Tem ic VN1206L/M, VN1210M S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *DS on V(BR)DSS M i n (V ) VN1206L VN1206M 120 VN1210M Features Low On-Resistance: 3.8 Q Low Threshold: 1.4 V Low Input Capacitance: 35 pF
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vn1206l/m,
vn1210m
VN1206L
VN1206M
VNI210M
O-226AA)
P-38211â
15-Aug-94
VNI210M
VN1206M
VN1210M
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Untitled
Abstract: No abstract text available
Text: Siliconix DG528/529 A M em ber of the TEMIC Group Latchable Single 8-Channel/Differential 4-Channel Analog Multiplexers Features Benefits Applications • Low itiS on : 270 Q • Improved System Accuracy • Data Acquisition Systems • 44-V Power Supply Rating
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DG528/529
DG528
DG529,
DG528s
16-line
F-32167--Rev.
A254735
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