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    A22 T TRANSISTOR Search Results

    A22 T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A22 T TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A22 T transistor

    Abstract: RS Components transistor t03
    Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)


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    A22-4015 A22 T transistor RS Components transistor t03 PDF

    SGA-2286

    Abstract: DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
    Text: Product Description Stanford Microdevices’ SGA-2286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    SGA-2286 SGA-2286 DC-3500 EDS-100625 DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier PDF

    SGA-2263

    Abstract: A22 T transistor transistor data cd
    Text: Product Description Stanford Microdevices’ SGA-2263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    SGA-2263 SGA-2263 DC-3500 EDS-100626 A22 T transistor transistor data cd PDF

    14549F

    Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
    Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor


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    20MHz. 14549F itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D PDF

    Catalog Sensors for Process Applications

    Abstract: NCB1.5-8GM25-N0 5M
    Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT 


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    199003130E Catalog Sensors for Process Applications NCB1.5-8GM25-N0 5M PDF

    triac ansteuerung

    Abstract: M2545A mov 250 ac m5957 DOLD vde 0435 IEC 947-5-1 iec 947.5 iec 947.5.1 relais 275 m595
    Text: Installations- / Steuerungstechnik Koppelrelais IK 3070, Koppelrelaissystem I_ 3070 Eingangskoppelrelais - Ausgangskoppelrelais 0213986 • nach IEC/EN 61 810-1 • Relais-, Triac- oder Transistorausgang • sichere Trennung nach VDE 0106 Teil 101 bei Geräten mit


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    D-78114 triac ansteuerung M2545A mov 250 ac m5957 DOLD vde 0435 IEC 947-5-1 iec 947.5 iec 947.5.1 relais 275 m595 PDF

    SMFV008

    Abstract: No abstract text available
    Text: Back SmartMediaTM SMFV008 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 10ms Max. → 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) → 1014(Min.)


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    SMFV008 SMFV008 PDF

    rba9

    Abstract: SMFV008
    Text: SmartMediaTM SMFV008 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 10ms Max. → 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) → 1014(Min.)


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    SMFV008 SMFV008 rba9 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems


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    RF5125 IEEE802 11b/g/n RF5125 203mm 330mm 025mm PDF

    400F

    Abstract: KM29V64000T
    Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.


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    KM29V64000T 400F KM29V64000T PDF

    KM29U64000IT

    Abstract: KM29U64000T 400F
    Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the


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    KM29U64000T, KM29U64000IT KM29U64000IT KM29U64000T 400F PDF

    K1S2816BCM

    Abstract: K1S2816BCM-I
    Text: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter


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    K1S2816BCM 8Mx16 K1S2816BCM K1S2816BCM-I PDF

    K9F6408U0B-TCB0

    Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary 0.0 Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles


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    K9F6408U0B-TCB0, K9F6408U0B-TIB0 K9F6408U0B-TCB0 400F K9F6408U0B K9F6408U0B-TIB0 PDF

    AN8472SA

    Abstract: BC417 A22 T transistor BC114
    Text: ICs for Compact Disc/CD-ROM Player AN8472SA Spindle motor driver IC for optical disk • Overview Unit: mm 11.0±0.3 32 17 ■ Applications 0.65 +0.10 0.3 –0.05 Seating plane 8.1±0.3 +0.10 0.2–0.05 1.5±0.2 6.1±0.3 0.625 16 0.65±0.10 1 0.1±0.1 • 3-phase full-wave 120° duty factor system


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    AN8472SA AN8472SA BC417 A22 T transistor BC114 PDF

    Untitled

    Abstract: No abstract text available
    Text: K1S28161CM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter


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    K1S28161CM 8Mx16 PDF

    400F

    Abstract: K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles


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    K9F6408U0B-TCB0, K9F6408U0B-TIB0 400F K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M PDF

    Untitled

    Abstract: No abstract text available
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Preliminary 1. Changed endurance : 1 million -> 100K program/erase cycles


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    K9F6408U0B-TCB0, K9F6408U0B-TIB0 PDF

    K9F6408U0A-TCB0

    Abstract: 400F K9F6408U0A K9F6408U0A-TIB0 KM29U64000AIT KM29U64000AT
    Text: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes


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    K9F6408U0A-TCB0, K9F6408U0A-TIB0 KM29U64000AT K9F6408U0A-TCB0 KM29U64000AIT 000us 500us K9F6408U0A-TCB0 400F K9F6408U0A K9F6408U0A-TIB0 PDF

    KM29U64000IT

    Abstract: KM29U64000T 400F K9F6408U0M-TCB0 K9F6408U0M-TIB0
    Text: K9F6408U0M-TCB0, K9F6408U0M-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet. 1999


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    K9F6408U0M-TCB0, K9F6408U0M-TIB0 KM29U64000T K9F6408U0M-TCB0 KM29U64000IT 400F K9F6408U0M-TCB0 K9F6408U0M-TIB0 PDF

    K9S2808V0C

    Abstract: K9S6408V0C K9S5608V0X
    Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing


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    K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B K9S2808V0C K9S6408V0C K9S5608V0X PDF

    date code marking samsung

    Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
    Text: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary


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    K9S6408V0A-SSB0 SMFV008A 000us 500us date code marking samsung digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor PDF

    Samsung 6v 6 pin camera

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes


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    K9F6408U0A-TCB0, K9F6408U0A-TIB0 KM29U64000AT K9F6408U0A-TCB0 KM29U64000AIT K9F6408U0A-TIB0 000us 500us Samsung 6v 6 pin camera PDF

    K9S6408V0B

    Abstract: K9S6408V0B-SSB0
    Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue July 17th 2000 0.1 1. Changed don’t care mode in address cycles


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    K9S6408V0B-SSB0 K9S6408V0B K9S6408V0B-SSB0 PDF

    transistor BC1

    Abstract: compact disc dvd player circuit diagram TRANSISTOR a31 AN8472SA 11 pins dvd player motor cd-rom circuit diagram BC417
    Text: ICs for Compact Disc/CD-ROM Player AN8472SA Spindle motor driver IC for optical disk • Overview Unit: mm 32 17 1 16 8.1±0.3 11.0±0.3 6.1±0.3 The AN8472SA is a high performance IC suited for driving a spindle motor of an optical disk such as CD-ROM, DVD etc. Small outline package can


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    AN8472SA AN8472SA bui72SA transistor BC1 compact disc dvd player circuit diagram TRANSISTOR a31 11 pins dvd player motor cd-rom circuit diagram BC417 PDF