403A-03
Abstract: so20w CR0805 AD11 AD30
Text: P3V VIO P1 P2 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# A7 7 X7 1 A8 8 A9 9 X11 1 X12 X10 X50 C3 0.01 CC0805 2 2 CC0805 16 B16 17 B17 GNT# 18 B18 REQ# 19 B19 PME# A20 20 20 B20 AD31 AD30 A21 21 21 B21 AD29 A22 22 22 B22 AD28
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CC0805
MBRS130LT3
03A-03
CR0805
403A-03
so20w
CR0805
AD11
AD30
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PU27
Abstract: 29lv800bb PAL16V8 PU22 MCF5206eFT samtec connector ipl1 simm 72pin PU10 SPR10 SPR11
Text: A A[0.23] B C D E A[0.23] J1 J2 4 4 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 3 A16 A17 A18 A19 A20 A21 A22 A23 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33
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10-way
768KHz
DS1307Z
RS-232,
M5206eLITE
PU27
29lv800bb
PAL16V8
PU22
MCF5206eFT
samtec connector ipl1
simm 72pin
PU10
SPR10
SPR11
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Untitled
Abstract: No abstract text available
Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a
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84FV256006
120ns
150ns
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810B1
Abstract: 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30336-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809Bx-/810Bx-/811Bx-/812Bx-25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and
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DS05-30336-2E
MB98A809Bx-/810Bx-/811Bx-/812Bx-25
MB98A809Bx,
MB98A810Bx,
MB98A811Bx
MB98A812Bx
68-pin
F9704
810B1
20-FFH
A1286-2
811b1
CRD-68P-M17
2 M flash memory
812b2
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F150 regulator
Abstract: PQFP100
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD DATA BRIEFING • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
16-bit
F150 regulator
PQFP100
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29f400
Abstract: No abstract text available
Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a
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84FV256006
150ns.
29f400
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Untitled
Abstract: No abstract text available
Text: Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and EEPROM. The devices are designed to offer a
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84FV256006
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INDEPENDENT INK 73X
Abstract: CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
73-ball
88-ball
S71JLxxxH
S29JL064H
16-only
S71JLxxxHxx
INDEPENDENT INK 73X
CEF-A21
71jl128
bonus ball sheets
S71JL064HA0BAW01
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d666
Abstract: CRX14 STM1404 st nand flash application note firmware cash register JTCK STEVAL-IPC001V1 STR710FZ2 A6 P113
Text: STEVAL-IPC001V1 Electronic fiscal cash register Data Brief Features • 4-Mbyte Flash, 32-Mbyte NAND and 1-Mbyte SRAM on board ■ Two smartcard readers ■ STM1404 secure chip, FIPS 140-2 compliant ■ Ethernet 10Base-T, 3 UARTs, 1 RS-485, 1 PS/ 2, 1 USB full speed, 4 x I2C, 1 x SPI, 2 LCDs
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STEVAL-IPC001V1
32-Mbyte
STM1404
10Base-T,
RS-485,
64Mbyte
64-Mbyte
CRX14
d666
st nand flash application note
firmware cash register
JTCK
STEVAL-IPC001V1
STR710FZ2
A6 P113
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CPA4
Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Text: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5
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DK86967
DK86967-ISA
DK86967-PCC
CPA4
Jumper JP2e
LEDTX
CPD14
A41 transformer
PCD-15
a4510
CPD11
MCS 96 users manual
CPA17
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MB98A81331
Abstract: CRD-68P-M05
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30326-1E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A8113x-/8123x-/8133x-/8143x-20 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2 M/4 M/8 M/16 M-BYTE • DESCRIPTION The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and
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DS05-30326-1E
MB98A8113x-/8123x-/8133x-/8143x-20
MB98A8113x,
MB98A8123x,
MB98A8133x
MB98A8143x
68-pin
F9706
MB98A81331
CRD-68P-M05
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INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
spansion pdip 32 marking format
3105P
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D1651
Abstract: 2A084 D1229 84FV256006
Text: Issue 5.1 April 2001 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and
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84FV256006
150ns.
120ns
150ns
D1651
2A084
D1229
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84FV
Abstract: PUMA84
Text: Issue 5.0 November 1999 Description The PUMA 84 range of devices provide a high density, surface mount memory solution with density up to twice that of standard monolithic devices. The PUMA 84 may accomodate various memory technologies including SRAM, FLASH and
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84FV256006
84FV
PUMA84
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Untitled
Abstract: No abstract text available
Text: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39VF6401B
SST39VF6402B
SST39VF640xB2
SST39VF6401B
MO-210,
48-tfbga-B1K-8x10-450mic-4
48-BALL
S71288-01-000
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28256 eeprom
Abstract: DS1235Y
Text: 0S1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc A141 1 A121 2 A71 3 A61 4 AS 1 5 A41 6 A31 7 A21 8 A11 9 AO1 10 DQO1 11 OQ1 1 12 DQ2 1 13 GND1 14 • Data is automatically protected during power
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0S1235Y/AB
DS1235Y/AB
28-pin
DS1235Y)
DS1235AB)
144-b
200ns
28256 eeprom
DS1235Y
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32AFT/ADC TO SH IBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32AFT/ADC device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V32AFT/ADC
TC58V32AFT/ADC
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810B
Abstract: No abstract text available
Text: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory
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MB98A809B
-/810B
-/811B
-/812B
MB98A809Bx,
MB98A810Bx,
MB98A811Bx
MB98A
16-bit
F9704
810B
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20A1
Abstract: fujitsu PCMCIA flash
Text: œ FUJITSU DATASHEET: MB98A8092X- / 8102x- / 8112x- / 8122x-25 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1M / 2M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are Flash electrically eraseable and programmable Flash memory cards capable of
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MB98A8092X-
8102x-
8112x-
8122x-25
MB98A8092x,
MB98A8102x,
MB98A8112x
MB98A8122x
68-pin
16-bit
20A1
fujitsu PCMCIA flash
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seiko epson RAM IC MEMORY CARD "40 pin"
Abstract: mask rom MRC1281 a21 eeprom
Text: MASK ROM OUTLINE The MASK ROM IC MEMORY CARD series is made up of Masked ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. VARIATION Part Number MRC1281 ECO MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0
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MRC1281
MRC256IEC0
MRC512IEC0
MRC100IEC0
MRC200IEC0
MRC400IEC0
128KB
256KB
512KB
seiko epson RAM IC MEMORY CARD "40 pin"
mask rom
a21 eeprom
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TCP 8126
Abstract: No abstract text available
Text: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are
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MB98A8092x,
MB98A8102x,
MB98A8112x
MB98A8122x
68-pin
16-bit
374T75b
MB98A8092X-25
MB98A8102X-25
MB98A8112X-25
TCP 8126
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fujitsu PCMCIA flash
Abstract: No abstract text available
Text: •T o T o p f tìm u p i In d e x MEMORY ÌBI S MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and
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OCR Scan
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MB98A809B
-/810B
-/811B
-/812B
MB98A809Bx,
MB98A810Bx,
MB98A811Bx
MB98A
16-bit
F9704
fujitsu PCMCIA flash
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Untitled
Abstract: No abstract text available
Text: March 1994 Edition 1.0 FUJITSU DATA SHEET MB98A 8113X-/8 123x- / 8 1 33x- / 8 143x-20 FLASH MEMORY CARD FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 2M / 4M / 8M / 1 6M-BYTE The Fujitsu MB98A8113x, MB98A8123x, MB98A8133x and MB98A8143x are electrically erasable and programmable Flash memory cards capable of storing
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MB98A
8113X-/8
143x-20
MB98A8113x,
MB98A8123x,
MB98A8133x
MB98A8143x
68-pin
16-bit
JV0029-943J1
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M x 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
256bytes:
528bytes
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