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    A1YA Search Results

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    PS2701A-1Y-A Renesas Electronics Corporation High Isolation Voltage SOP Photocoupler, , / Visit Renesas Electronics Corporation
    PS2561A-1Y-A Renesas Electronics Corporation Photocouplers / Optocouplers, , / Visit Renesas Electronics Corporation
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    Bourns Inc 303M-12A1YA

    GDT 390V 10KA 5 POLE TH
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    Renesas Electronics Corporation PS2701A-1Y-A

    OPTOISOLATOR 3.75KV TRANS 4SMD
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    DigiKey PS2701A-1Y-A 4,180
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    Avnet Americas PS2701A-1Y-A Ammo Pack 18 Weeks 4,180
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    Mouser Electronics PS2701A-1Y-A 4,413
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    California Eastern Laboratories (CEL) PS2701A-1Y-A

    OPTOISOLATOR 3.75KV TRANS 4SMD
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    DigiKey PS2701A-1Y-A Tube 300
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    California Eastern Laboratories (CEL) PH5503A2NA1-Y-A

    SENSOR OPT 555NM AMBIENT 6 UFDFN
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    California Eastern Laboratories (CEL) PH5502B2NA1-Y-A

    SENSOR OPT 555NMAMB 6 SMD FLAT
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    A1YA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST3401

    Abstract: TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet
    Text: P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION The ST3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


    Original
    PDF ST3401 ST3401 OT-23-3L OT-23 -30V/-4 55m-ohm -30V/-3 65m-ohm TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet

    A1YA

    Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
    Text: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    PDF ST3401M ST3401M OT-23-3L -30V/-4 -30V/-3 STP3401M A1YA ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014

    Untitled

    Abstract: No abstract text available
    Text: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    PDF ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG

    STP3401

    Abstract: ST3401 A1YA marking 04 sot-23-3L
    Text: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original
    PDF ST3401 ST3401 OT-23-3L -30V/-4 -30V/-3 -30V/-1 STP3401 A1YA marking 04 sot-23-3L

    MOSFET P channel SOT-23

    Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
    Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original
    PDF ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG OT-23 MOSFET P channel SOT-23 A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340

    Untitled

    Abstract: No abstract text available
    Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original
    PDF ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG