row decoder
Abstract: A17a A8 diode diode a3 diode a7 transistor A10 transistor a13 A18 transistor HM62W8512B
Text: HM62W8512B Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 • • Column I/O A14 A3 A7 A6 I/O0 Input Data Control Column Decoder I/O7 A13 A17A15 A8 A9 A11A10 A4 A5 •• CS WE OE 4 Timing Pulse Generator
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HM62W8512B
A17A15
A11A10
row decoder
A17a
A8 diode
diode a3
diode a7
transistor A10
transistor a13
A18 transistor
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diode a3
Abstract: transistor A7 diode a7 diode A9 A2 diode A7 transistor diode a1 diode A4 HM628512BI A16V
Text: HM628512BI Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE OE 4 Timing Pulse Generator
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HM628512BI
A17A15A8
diode a3
transistor A7
diode a7
diode A9
A2 diode
A7 transistor
diode a1
diode A4
A16V
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diode a3
Abstract: HM62W8512BI
Text: HM62W8512BI Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control • • Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE Timing Pulse Generator
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HM62W8512BI
A17A15A8
diode a3
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transistor a13
Abstract: A17a diode a3 A18 transistor A8 diode decoder diode a2 diode a7 A7 diode HM62V8512B
Text: HM62V8512B Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 • • Column I/O A14 A3 A7 A6 I/O0 Input Data Control Column Decoder I/O7 A13 A17A15 A8 A9 A11A10 A4 A5 •• CS WE OE 4 Timing Pulse Generator
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HM62V8512B
A17A15
A11A10
transistor a13
A17a
diode a3
A18 transistor
A8 diode
decoder
diode a2
diode a7
A7 diode
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diode a3
Abstract: Pulse generator circuit diode a7 transistor A6 A7 transistor pulse generator transistor A10 transistor A16 A2 diode A4 diode
Text: HM628512A Series Block Diagram A12 V CC A7 V SS A1 A0 A2 A5 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A6 A3 A4 A18 I/O0 Column I/O • • Input Data Control Column Decoder I/O7 A13 A17A15A8 A9 A11A10A14A16 • • CS WE OE 4 Timing Pulse Generator
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HM628512A
A17A15A8
A14A16
diode a3
Pulse generator circuit
diode a7
transistor A6
A7 transistor
pulse generator
transistor A10
transistor A16
A2 diode
A4 diode
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diode a3
Abstract: A2 diode A4 diode diode a7 a1 diode A12 diode A18 Transistor A7 transistor in a3 transistor A11
Text: HM628512BFP Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control • • Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE Timing Pulse Generator
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HM628512BFP
A17A15A8
diode a3
A2 diode
A4 diode
diode a7
a1 diode
A12 diode
A18 Transistor
A7 transistor
in a3
transistor A11
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A17a
Abstract: HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5UL HM62W8512BLFP-7 HM62W8512BLFP-7SL HM62W8512BLFP-7UL HM62W8512BLTT-5
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32VF201 / SST32VF202 / SST32VF401 / SST32VF402 SST32VF201 / 202 / 401 / 402SRAM (x16) ComboMemories Advance Information FEATURES: • MPF + SRAM ComboMemory – SST32VF201: 128K x16 Flash + 64K x16 SRAM – SST32VF202: 128K x16 Flash + 128K x16 SRAM
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SST32VF201
SST32VF202
SST32VF401
SST32VF402
402SRAM
SST32VF201:
SST32VF202:
SST32VF401:
SST32VF402:
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f16e
Abstract: No abstract text available
Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28DW8102T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles
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LE28DW8102T
16141\168T\
xxxx-19/19
f16e
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
Hitachi DSA002746
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM628512A Series 4 M SRAM 512-kword x 8-bit ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The
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HM628512A
512-kword
ADE-203-640B
525-mil
400-mil
600-mil
Hitachi DSA002746
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1086a
Abstract: HM62W8512BI HM62W8512BLTTI HM62W8512BLTTI-7 HM62W8512BLTTI-8
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Hitachi DSAUTAZ005
Abstract: No abstract text available
Text: HM62W8512BI Series 4 M SRAM 512-kword x 8-bit ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process
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HM62W8512BI
512-kword
ADE-203-1086A
32-pin
out628)
Hitachi DSAUTAZ005
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HM628512ALP-7
Abstract: HM628512ALFP-7 HM628512A HM628512ALFP-5 HM628512ALFP-5SL HM628512ALFP-7SL HM628512ALP-5 HM628512ALP-5SL HM628512ALP-7SL 28 pin plastic dip hitachi dimension
Text: HM628512A Series 4 M SRAM 512-kword x 8-bit ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The
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HM628512A
512-kword
ADE-203-640B
525-mil
400-mil
600-mil
HM628512ALP-7
HM628512ALFP-7
HM628512ALFP-5
HM628512ALFP-5SL
HM628512ALFP-7SL
HM628512ALP-5
HM628512ALP-5SL
HM628512ALP-7SL
28 pin plastic dip hitachi dimension
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HM62W8512ALFP-8
Abstract: HM62W8512ALFP-8SL HM62W8512ALRR-8 HM62W8512ALTT-8 HM62W8512ALTT-8SL ADE-203-641 HM62W8512 Hitachi DSA0020 Hitachi DSA00200
Text: HM62W8512A Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-641 Z Preliminary Rev. 0.1 Oct. 21, 1997 Description The Hitachi HM62W8512A is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The
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HM62W8512A
524288-word
ADE-203-641
512-kword
525-mil
400-mil
HM62W8512-7
HM62W8512ALFP-8
HM62W8512ALFP-8SL
HM62W8512ALRR-8
HM62W8512ALTT-8
HM62W8512ALTT-8SL
ADE-203-641
HM62W8512
Hitachi DSA0020
Hitachi DSA00200
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A17a
Abstract: HM62V8512B HM62V8512BLFP-7 HM62V8512BLFP-7SL HM62V8512BLFP-8 HM62V8512BLFP-8SL HM62V8512BLTT-7 HM62V8512BLTT-7SL HM62V8512BLTT-8 HM62V8512BLTT-8SL
Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit ADE-203-905 (Z) Preliminary Rev. 0.0 Apr. 24, 1998 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
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HM62V8512B
512-kword
ADE-203-905
525-mil
400-mil
A17a
HM62V8512BLFP-7
HM62V8512BLFP-7SL
HM62V8512BLFP-8
HM62V8512BLFP-8SL
HM62V8512BLTT-7
HM62V8512BLTT-7SL
HM62V8512BLTT-8
HM62V8512BLTT-8SL
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B22Y
Abstract: A08K B15Y 26-48-1082 b10y A14K A09K
Text: HEADER NUMBER: PIN NUMBER: PLATING PIN LENGTH: L MATING LENGTH: X GOLD POINT: G PIN HEIGHT: Y PC TAIL LENGTH: Z TIN: T CKTS: VOIDED CKTS: PACKAGING: MATERIAL ENG NUMBER NUMBER 26-48-1022 -A02A102 26-48-1032 -A03A102 26-48-1042 -A04A102 26-48-1052 -A05A102
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-A02A102
-A03A102
-A04A102
-A05A102
-A06A102
-A07A102
-41662-ANA102-*
1185-A-AN
PK-41662-001
-A19A102
B22Y
A08K
B15Y
26-48-1082
b10y
A14K
A09K
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM628512BI Series 4 M SRAM 512-kword x 8-bit ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.
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HM628512BI
512-kword
ADE-203-935A
525-mil
400-mil
600-mil
Hitachi DSA002746
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1086a
Abstract: HM62W8512BI HM62W8512BLTTI HM62W8512BLTTI-7 HM62W8512BLTTI-8 Hitachi DSA00358
Text: HM62W8512BI Series 4 M SRAM 512-kword x 8-bit ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process
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HM62W8512BI
512-kword
ADE-203-1086A
32-pin
1086a
HM62W8512BLTTI
HM62W8512BLTTI-7
HM62W8512BLTTI-8
Hitachi DSA00358
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HM628512BFP
Abstract: HM628512BFP-5 HM628512BFP-7
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology.
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HM62V8512B
512-kword
ADE-203-905C
525-mil
400-mil
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HM628512
Abstract: No abstract text available
Text: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,
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HM628512
524288-word
ADE-203-236F
12-kword
525-mil
400-mil
600-mil
HM62851P/LP
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L0619
Abstract: No abstract text available
Text: HM62W8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-641 Z Preliminary Rev. 0.0 Oct. 3, 1996 Description The Hitachi HM62W8512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (im Hi-CMOS process technology. The
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HM62W8512A
524288-word
ADE-203-641
512-kword
525-mil
400-mil
D-85622
L0619
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HM628512ALPI-7
Abstract: a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001
Text: HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 Z Preliminary Rev. 0.0 Jun. 20, 1997 D escription T he Hitachi HM 628512A I is a 4-M bit static RAM organized 512-kw ord x 8-bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0 .5 p m H i-C M O S process technology. The
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HM628512AI
524288-word
ADE-203-791
M628512AI
512-kword
525-mil
400-mil
600-mil
D-85622
HM628512ALPI-7
a12q
A17a
DP-32
HM628512ALFPI-7
HM628512ALFPI-8
HM628512ALPI-8
HM628512ALTTI-7
Hitachi Scans-001
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