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    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM62W8256B Series 2 M SRAM 256-kword x 8-bit ADE-203-992 (Z) Preliminary, Rev. 0.0 Jan. 11, 1999 Description The Hitachi HM62W8256B is a 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62W8256B Series has realized higher density, higher performance and low power consumption by employing HiCMOS process technology. The HM62W8256B Series offers low power standby power dissipation;


    Original     		PDF HM62W8256B 256-kword ADE-203-992 144-kword 32-pin Com1628) Hitachi DSA002746

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM62V8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1004 (Z) Preliminary, Rev. 0.0 Jan. 19, 1999 Description The Hitachi HM62V8256BI Series is 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62V8256BI Series has realized higher density, higher performance and low power consumption by


    Original     		PDF HM62V8256BI 256-kword ADE-203-1004 144-kword 32-pin ns/100 Hitachi DSA002746

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM62Y8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1003 (Z) Preliminary, Rev. 0.0 Jan. 20, 1999 Description The Hitachi HM62Y8256BI Series is 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62Y8256BI Series has realized higher density, higher performance and low power consumption by


    Original     		PDF HM62Y8256BI 256-kword ADE-203-1003 144-kword 32-pin Hitachi DSA002746

    M29W010B

    Abstract: PLCC32 TSOP32
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte


    Original     		PDF M29W010B 128Kb 16Kbytes M29W010B PLCC32 TSOP32

    AN1122

    Abstract: M29W010B PLCC32 TSOP32
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS


    Original     		PDF M29W010B 128Kb PLCC32 TSOP32 AN1122 M29W010B PLCC32 TSOP32

    an1171

    Abstract: EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note
    Text: AN1154 APPLICATION NOTE 8031 / M88 FLASH+PSD Design Tutorial This tutorial takes you step-by-step through the development cycle of a M88x3Fxx based design, from design entry, to programming the device. The first part of this tutorial shows how a M8813F1x can be used


    Original     		PDF AN1154 M88x3Fxx M8813F1x an1171 EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note

    M29F010B

    Abstract: Device M29F010B AN1122 PDIP32 PLCC32 TSOP32 M29F010
    Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 16 KBytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER


    Original     		PDF M29F010B 128Kb PLCC32 TSOP32 PDIP32 M29F010B Device M29F010B AN1122 PDIP32 PLCC32 TSOP32 M29F010

    TSOP32 Package

    Abstract: M29W010B PLCC32 TSOP32 AN1122
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS


    Original     		PDF M29W010B 128Kb PLCC32 TSOP32 TSOP32 Package M29W010B PLCC32 TSOP32 AN1122

    IR RECEIVER TUTORIAL

    Abstract: T28C256 8031 intel 8031 MICROCONTROLLER 80c31 code manual WSI Cross Reference A128C256 8031 MICROCONTROLLER interfacing to ROM intel 8031 power verilog code for implementation of eeprom
    Text: PSD813F1/ 80C31 Design Tutorial Application Note 057 By Dan Harris and Mark Rootz February, 1999 47280 Kato Road, Fremont, CA 94538 Telephone: 510 -656-5400 (800) TEAM-WSI (832-6974) Web Site: http://waferscale.com E-mail: info@wsipsd.com Return to Main Menu


    Original     		PDF PSD813F1/ 80C31 1999--REV IR RECEIVER TUTORIAL T28C256 8031 intel 8031 MICROCONTROLLER 80c31 code manual WSI Cross Reference A128C256 8031 MICROCONTROLLER interfacing to ROM intel 8031 power verilog code for implementation of eeprom

    SMD MARKING A69

    Abstract: 5246M 12166X778 12149X778 SMD marking A67 5249Y ST26K Apem Components 5636 12146X778 631SH
    Text: TOGGLE SWITCHES A TINY 0.4VA 20V SP X TL TINY 1/2A 48V 0.4VA 20V SP,DP X S MINIATURE 0.4VA 20V 2A 250VAC SP,DP X ESD PROTECTION TL WASHABLE POLES PAGE S X X A2-A5 X X A6-A9 X X X A10-A13 X X X A14-A16 VDE RATINGS (Max. in bold) CSA SIZE UL P. C. MOUNT SERIES


    Original     		PDF 250VAC A10-A13 A14-A16 125ck 137DIA) 4631A22UU 4431A22UU SMD MARKING A69 5246M 12166X778 12149X778 SMD marking A67 5249Y ST26K Apem Components 5636 12146X778 631SH

    M29F010B

    Abstract: AN1122 PDIP32 PLCC32 TSOP32
    Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte typical ■ 8 UNIFORM 16 Kbytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER


    Original     		PDF M29F010B 128Kb PLCC32 TSOP32 PDIP32 M29F010B AN1122 PDIP32 PLCC32 TSOP32

    Device M29F010B

    Abstract: AN1122 M29F010B PDIP32 PLCC32 TSOP32 A/M29F010B(45/70/90/K50EH5 A/M29F010B(45/70/90/MT352/CG/S29AL004D55TFI02
    Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte typical ■ 8 UNIFORM 16 Kbytes MEMORY BLOCKS


    Original     		PDF M29F010B 128Kb PLCC32 TSOP32 PDIP32 Device M29F010B AN1122 M29F010B PDIP32 PLCC32 TSOP32 A/M29F010B(45/70/90/K50EH5 A/M29F010B(45/70/90/MT352/CG/S29AL004D55TFI02

    A128C256

    Abstract: 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5
    Text: 3/22/98 – REV 1.0 Design Tutorial, PSD813F1 – 80C31 Application Note 057 Preliminary By Dan Harris and Mark Rootz Contents 1 Introduction . 2


    Original     		PDF PSD813F1 80C31 A128C256 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5

    push button switch 2 pin

    Abstract: 10BASET pm5350 transistor SMD making code 3fb d32 7b5 "Lookaside Cache" diode 36b3 MIC29501 application R3F SMD smd b6h
    Text: Freescale Semiconductor, Inc. User’s Manual PQ2FADS-VR-UM Revision 0.0 June 12, 2003 Freescale Semiconductor, Inc. PQ2FADS-VR User’s Manual PQ2FADS-VR User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com


    Original     		PDF

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM62W8256BI Series 2 M SRAM 256-kword x 8-bit ADE-203-1005 (Z) Preliminary, Rev. 0.0 Jan. 19, 1999 Description The Hitachi HM62W8256BI is a 2-Mbit static RAM organized 262,144-kword × 8-bit. HM62W8256BI Series has realized higher density, higher performance and low power consumption by employing HiCMOS process technology. The HM62W8256BI Series offers low power standby power dissipation;


    Original     		PDF HM62W8256BI 256-kword ADE-203-1005 144-kword 32-pin Hitachi DSA002746

    AN1122

    Abstract: JESD97 M29W010B PLCC32 TSOP32
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS


    Original     		PDF M29W010B 128Kb PLCC32 TSOP32 AN1122 JESD97 M29W010B PLCC32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 10µs by Byte typical ■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS


    Original     		PDF M29W010B 128Kb PLCC32 TSOP32

    GC102

    Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
    Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com­ patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support­


    OCR Scan     		PDF 377747S 12/16MHZ 16MHz 12MHz GC101/GC102 16MHz. /RAS40 /RAS6080 RAS40 GC102 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406

    CHIPset for 80286

    Abstract: SL6003 A1719 logicstar TL4A sl6005
    Text: ADDRESS & DATA BUS BUFFERS SL6003, SL6004, SL6005 17 PC/A T COMPATIBLE CHIP-SET W PRELIMINARY The SL6003 provides address latches and control buffers for the PC / AT system. Control signals from the SL6001 are buffered by the SL6003 and tri-stated for the expansion and the I/O buses. This


    OCR Scan     		PDF SL6003, SL6004, SL6005 SL6003 SL6001 68-pin SL6004 CHIPset for 80286 A1719 logicstar TL4A sl6005

    c106 1006

    Abstract: GC101-12 C144 sa 2n3904, itt GC101 41256 ram memory mapper A1723 GC101/GC102 GC101-16
    Text: GCIOI / GC102 12/16 MHZ PC/AT COMPATIBLE CHIP SET G2 Description Features • Highly integrated PC /A T compatible three chip set. • Supports up to 4 M eg D R A M using 1M or 256k devices. • Available in 16MHz and 12MHz ver­ sions. • Designed in CM OS for low power


    OCR Scan     		PDF GC102 16MHz 12MHz GC101/GC102 16MHz. implemented/RAS100 /RAS100 c106 1006 GC101-12 C144 sa 2n3904, itt GC101 41256 ram memory mapper A1723 GC101-16

    28F1000

    Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
    Text: m PKELIIflilOliiARV MX28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current


    OCR Scan     		PDF MX28F1000 100mA 10OOQC-12 10OOQC-15 28F1000T 28F1000TC 28F1000R 28F1000 28F1000PC 28f1000p MX28F1000 MXIC MX

    Untitled

    Abstract: No abstract text available
    Text: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 1Ojas typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte


    OCR Scan     		PDF M29W010B 128Kb 16Kbytes TSOP32

    P82A203

    Abstract: P82C202 CS8220 P82A204 RAS 0510 KMC 2120 82C201 82c202 cpu P82C201-10 82C202
    Text: 82C201, 8 2 C 2 0 1 -1 0 /8 2 C 2 0 2 /8 2 A 2 0 3 /8 2 A 2 0 4 /8 2 A 2 0 5 CS8220: PC/AT COMPATIBLE C H IP S e t“ • Fully IBM'" PC AT Compatible ■ Flexible architecture allows usage in any iAPX 286 design ■ Early ALE Generation ■ Early RAS Generation


    OCR Scan     		PDF 82C201, 82C201-10/82C202/82A203/82A204/82A205 CS8220: 82C201 82C202, 82A203, 82A204 82A205 CS8220 P82A203 P82C202 P82A204 RAS 0510 KMC 2120 82c202 cpu P82C201-10 82C202

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4400FT-10,-12,-15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The TC55V4400FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 4,194,304 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V4400FT-10 304-WORD TC55V4400FT 216-bit 54-P-400-0