Untitled
Abstract: No abstract text available
Text: 22B-UM001.book Page 1 Wednesday, January 22, 2014 11:04 AM Adjustable Frequency AC Drive FRN 1.xx - 6.xx User Manual www.abpowerflex.com 22B-UM001.book Page 2 Wednesday, January 22, 2014 11:04 AM Important User Information Solid state equipment has operational characteristics differing from those of
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22B-UM001
22B-UM001H-EN-E
22B-UM001G-EN-E
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Untitled
Abstract: No abstract text available
Text: 24AA256/24LC256/24FC256 256K I2C CMOS Serial EEPROM Device Selection Table Part Number VCC Range Max. Clock Frequency Temp. Ranges 24AA256 1.7-5.5V 400 kHz 1 I, E 24LC256 2.5-5.5V 400 kHz I, E 24FC256 1.7-5.5V 1 MHz(2) I • Temperature Ranges: - Industrial (I):
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24AA256/24LC256/24FC256
24AA256
24LC256
24FC256
24AA256/24LC256/
24XX256*
devi60-4-227-8870
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a96 laser diode
Abstract: MOTHERBOARD CIRCUIT diagram explained ZIF socket design guidelines 20 pin zif socket S8-95 surface mount transistor A48 surface mount transistor A103 surface mount transistor A61 surface mount transistor A55 A85A
Text: R 603 Pin Socket Design Guidelines Order Number: 249672-001 May 2001 603 Pin Socket Design Guidelines R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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PT100 temperature sensor data sheet
Abstract: signal conditioning circuit for pt100 e5ck-aa1-302 pt100 temperature sensor circuit diagram signal conditioning circuit for pt100 4-20 mA PT100 4 wire temperature sensor Pt100 3 wire E5CK-AA1-500 circuit diagram temperature measurement rtd PT100 temperature sensor datasheet
Text: Digital Process Controller Series E5K Advanced Process Digital Controllers with Fuzzy Logic D D D D D D D D D D D D Field configurable outputs, options. 100 ms sampling for analog input . Advanced PID, or fuzzy self-tuning. Conforms to UL, CSA and CE standards.
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IP66/NEMA
H301-E3-1
PT100 temperature sensor data sheet
signal conditioning circuit for pt100
e5ck-aa1-302
pt100 temperature sensor circuit diagram
signal conditioning circuit for pt100 4-20 mA
PT100 4 wire temperature sensor
Pt100 3 wire
E5CK-AA1-500
circuit diagram temperature measurement rtd
PT100 temperature sensor datasheet
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BN-127
Abstract: 2220H8C XNOR GATE application AN-127 AN-31 RE20 TMC2220 TMC2221 radar digital correlator MARKING BY2
Text: Electronics Semiconductor Division TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 32 Bit, 20 MHz; 1 x 128 Bit 20 MHz Features Applications ¥ 20 MHz continuous correlation rate ¥ Fully programmable masking ¥ Two's complement or unsigned magnitude correlation
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TMC2220/TMC2221
TMC2220)
TMC2220
68-pin
69-pin
TMC2221
28-pin
DS70002220
BN-127
2220H8C
XNOR GATE application
AN-127
AN-31
RE20
radar digital correlator
MARKING BY2
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radar digital correlator
Abstract: TMC2220 correlator AN-127 AN-31 TMC2221 2220H8C dm902
Text: www.fairchildsemi.com TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 32 Bit, 20 MHz; 1 x 128 Bit 20 MHz .Features Applications • 20 MHz continuous correlation rate • Fully programmable masking • Two's complement or unsigned magnitude correlation
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TMC2220/TMC2221
TMC2220)
TMC2220
68-pin
69-pin
TMC2221
28-pin
DS30002220
radar digital correlator
correlator
AN-127
AN-31
2220H8C
dm902
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Untitled
Abstract: No abstract text available
Text: 4.25 Gbps 144 x 144 Asynchronous Crosspoint Switch Features • On-chip input and output terminations • Single 2.5 V supply; 3.3 V option for control port • 144 input by 144 output crosspoint switch • 4.25 Gigabit per second Gbps non-return to zero
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G52369
1-800-VITESSE
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Untitled
Abstract: No abstract text available
Text: VSC3140 Datasheet Features • On-chip input and output terminations • Single 2.5 V supply; 3.3 V option for control port • 144 input by 144 output crosspoint switch • 4.25 Gigabit per second Gbps non-return to zero (NRZ) data bandwidth • Global and per-channel programmable input signal
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VSC3140
G52369
VSC3140
VSC3140-01,
VSC3140-01
VSC3140HR
1072-pin,
VSC3140XHR.
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Untitled
Abstract: No abstract text available
Text: VSC3140 Datasheet 4.25 Gbps 144 x 144 Asynchronous Crosspoint Switch • On-chip input and output terminations • Single 2.5 V supply; 3.3 V option for control port • 144 input by 144 output crosspoint switch • 4.25 Gigabit per second Gbps non-return to zero
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VSC3140
G52369
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new bright R288
Abstract: new bright R266 A102 A106 A107 C103 C109 C114 lm3931 HT1320 MD334 ddr ic a109 up2782 HD110 quanta
Text: 1 2 3 4 5 1 N01 Block Diagram Intel BANIAS/Dothan 478 PIN micro FC-BGA A A P3, 4 System bus 4x100 MHz R/G/B CRT MCH P9 Memory Control Hub LVDS SIGNAL LCD Montara-GME ( Wide XGA ) DRAM SIGNAL P12 TV SIGNAL S-Video SO-DIMM 1/2 732 PIN (micro FCBGA) P8 P5, 6, 7
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4x100
66MHz
266-MB/s)
82801DBM
AD1981B
MAX9750
82562EM
82541GI
338PWG
PR107
new bright R288
new bright R266
A102 A106 A107 C103 C109 C114
lm3931
HT1320
MD334
ddr ic a109
up2782
HD110
quanta
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Untitled
Abstract: No abstract text available
Text: 6.5 Gbps 144 x 144 Asynchronous Crosspoint Switch Datasheet VMDS-10237 Revision 4.0 April 2009 Downloaded by data_acq@partminer.com on April 8, 2009 from Vitesse.com VSC3144 Downloaded by data_acq@partminer.com on April 8, 2009 from Vitesse.com Vitesse Corporate Headquarters
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VMDS-10237
VSC3144
1072-pin
VSC3144XHR
VSC3144HR
VSC3144
VSC3144HR
1072-pin,
VSC3144XHR.
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RC410ME
Abstract: ICS951417 SB450 RC410M asus Z94Rp CE307 R1702 c3205 y LA3201
Text: 5 4 3 2 1 Rev.1.2 D PAGE C B A TITLE 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Block Diagram Yonah CPU 1 Yonah CPU(2) THERMAL SENSOR/FAN RC410ME AGTL+ I/F (1) RC410ME A-LINK (2) RC410ME DDR2 I/F (3)
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RC410ME
SB450
AC97/USB
ICS951417
RC410M
asus
Z94Rp
CE307
R1702
c3205 y
LA3201
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PC2-3200
Abstract: PC2-5300 PC2-6400 MT18HTF12872PY DDR2 routing Tree MT47H64M
Text: 512MB, 1GB, 2GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT18HTF6472Y – 512MB MT18HTF12872PY – 1GB MT18HTF25672PY – 2GB Features Figure 1: 240-Pin RDIMM (MO-237 R/C C – NonParity; R/C H – Parity) • 240-pin, registered dual in-line memory module
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512MB,
240-Pin
MT18HTF6472Y
512MB
MT18HTF12872PY
MT18HTF25672PY
MO-237
240-pin,
PC2-3200,
PC2-3200
PC2-5300
PC2-6400
MT18HTF12872PY
DDR2 routing Tree
MT47H64M
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ICS951417
Abstract: LA3201 PR6203 Asus H3431 Pt6206 H3417 RC410ME SB450 CE307
Text: 5 4 3 2 1 Rev2.0 D PAGE C B TITLE 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Block Diagram Yonah CPU 1 Yonah CPU(2) THERMAL SENSOR/FAN RC410ME AGTL+ I/F (1) RC410ME A-LINK (2) RC410ME DDR2 I/F (3)
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RC410ME
SB450
AC97/USB
ICS951417
LA3201
PR6203
Asus
H3431
Pt6206
H3417
CE307
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Untitled
Abstract: No abstract text available
Text: 524,288 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION The TC574000DI is a 524,288 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC574000DI’s access time is 150ns, and
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TC574000DI
TC574000DIâ
150ns,
50mA/6
TC574000DI.
A0-A18,
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TC51440ASJ-70
Abstract: TC51440ASJ TC51440ASJ-60
Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASI utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514410ASJ-60/70/80
TC514410ASJ
TC514410ASI
300mil)
TC51440ASJ-70
TC51440ASJ
TC51440ASJ-60
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TC51440ASJ
Abstract: No abstract text available
Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514410ASJ-60/70/80
TC514410ASJ
300mil)
TC5144100/
512KX4
TC51440ASJ
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Untitled
Abstract: No abstract text available
Text: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced
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11002A
TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
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AZL-70
Abstract: TC514100APL TC514100 tc3141
Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM PRELIMINARY D E S C R IP T IO N T he TC514100APL/AJL/ASJL/AZL is th e new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon g ate process technology as
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TC514100APL/AJL/ASJL/AZL
300/350mil)
TC514100APL/AJL/ASJL/AZL.
a512K
TC5141
L/AZL-70,
AZL-70
TC514100APL
TC514100
tc3141
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Untitled
Abstract: No abstract text available
Text: 42 E TOSHIBA CLOGIC/MEMORY 4 ,1 9 4 ,3 0 4 W O R D X clGci 72 MÔ □02 QCHÔ =1 E l TOSE PRELIMINARY f BIT D Y N A M IC RA M ^ 4 - 2 3 - y r . DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as
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TC514100APL/AJL/ASJL/AZL
300/350rail)
TC5141
00APL/AJL/ASJL/AZL-80
TC514100
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Untitled
Abstract: No abstract text available
Text: 4,1 94 ,3 0 4 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as
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TC514100APL/AJL/ASJL/AZL
300/350mil)
TC514I00APL/AJL/ASJL/AZL.
a512K
TC5141
TC514100
TC5141OOAPL/AJ
L/AZL-10
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AD918
Abstract: TC514256 TC514266 TC514256A
Text: TOSHIBA MOS MEMORY PRODUCTS TC514266AP/AJ/AZ-70, TC514266AP/AJ/AZ-80 TC514266AP/AJ/AZ-10 DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bit. The TC514266AP/AJ/AZ utilizes TOSHIBArs CMOS Silicon gate process technology as
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TC514266AP/AJ/AZ-70,
TC514266AP/AJ/AZ-80
TC514266AP/AJ/AZ-10
TC514266AP/AJ/AZ
TC514266AP/AJ/AZ-80
TC5142S6AP/AJ/AZ-10
AD918
TC514256
TC514266
TC514256A
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TC511002A
Abstract: No abstract text available
Text: .1 TENTATIVE D AT A 1 ,048,576 W O R D x 1 BIT D Y N A M I C R A M DESCRIPTION The TC511002A P/A J/A Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002A P/A J/A Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
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003M2
Abstract: qml-38535 26C31 CQCC1-N20 GDFP2-F16 GDIP1-T16 SMD TRANSISTOR MARKING 2D TRANSISTOR SMD MARKING CODE 2d marking code 1g1 smd diode s40
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add vendor CAGE 01295. Make change to V|sj and P q as specified under paragraph 1.3. Make change to V o n 'CC- *OZ- •SC- skew, tp n z , and tpi 7 tests as specified in table I. Changes in accordance with N.O.R. 5962-R109-95.
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5962-R109-95.
TG047DÃ
G0342b2
003M2
qml-38535
26C31
CQCC1-N20
GDFP2-F16
GDIP1-T16
SMD TRANSISTOR MARKING 2D
TRANSISTOR SMD MARKING CODE 2d
marking code 1g1
smd diode s40
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