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    A11SELECT Price and Stock

    Allegro MicroSystems LLC A1156LUA-T

    MAGNETIC SWITCH UNIPOLAR 3SIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A1156LUA-T Bulk 8,000 1
    • 1 $1.53
    • 10 $1.2
    • 100 $0.9402
    • 1000 $0.73696
    • 10000 $0.62177
    		Buy Now

    Allegro MicroSystems LLC A1121LUA-T

    MAGNETIC SWITCH UNIPOLAR 3SIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A1121LUA-T Bulk 7,930 1
    • 1 $1.67
    • 10 $1.306
    • 100 $1.0231
    • 1000 $0.80197
    • 10000 $0.67662
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    JST Manufacturing A11KR11KR26E305A

    JUMPER 11KR-6S-P - 11KR-6S-P 12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A11KR11KR26E305A Bulk 981 1
    • 1 $2.81
    • 10 $2.548
    • 100 $2.245
    • 1000 $1.90828
    • 10000 $1.90828
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    APEM Inc A112

    SWITCH HARDWARE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A112 Bulk 886 1
    • 1 $0.19
    • 10 $0.181
    • 100 $0.1701
    • 1000 $0.13312
    • 10000 $0.13312
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    Century Spring Corp A11-7CS

    COMP O= .203,L= .72,W= .041
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A11-7CS Box 345 1
    • 1 $3.61
    • 10 $3.61
    • 100 $2.015
    • 1000 $1.59076
    • 10000 $1.59076
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    Find more A11SELECT price and stock on Findchips.com

    A11SELECT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015

    M62352AGP

    Abstract: AO11 M62352GP A11018 VTR precision voltage reference
    Text: MITSUBISHI <Standard Linear IC> M62352AGP 8BIT 12CH D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION M62352A is a CMOS structured semiconductor integrated ciruict integrating 12 channels of built-in D-A converters with high performance buffer operational amplifierf or each channel output.


    Original     		PDF M62352AGP M62352A M62352AGP AO11 M62352GP A11018 VTR precision voltage reference

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		PDF 128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8

    MT48H8M16LFF4-8IT

    Abstract: MT48H8M16 A11 MARKING CODE 8M16 MT48H8M16LF MT48H8M16LFF4
    Text: 128Mb: x16 – Mobile SDRAM Features Synchronous DRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: 54-Ball FBGA Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: MT48H8M16LF 54-Ball 096-cycle 09005aef80c97087/Source: 09005aef80c97015 MT48H8M16 MT48H8M16LFF4-8IT A11 MARKING CODE 8M16 MT48H8M16LFF4

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128800T L 128-Mbit Double Data Rate SDRAM Preliminary Datasheet 2002-04-26 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266B DDR266A DDR333 -8 -7.5 -7 -6 100 100 133 133 125 133 143 166 • Double data rate architecture: two data transfers


    Original     		PDF HYB25D128800T 128-Mbit DDR200 DDR266B DDR266A DDR333

    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


    Original     		PDF S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148

    MT48H8M16LFF4-8

    Abstract: MT48H8M16LFF4
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015 MT48H8M16LFF4-8 MT48H8M16LFF4

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015

    8M16

    Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
    Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		PDF 128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48

    Untitled

    Abstract: No abstract text available
    Text: S72WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE Distinctive Characteristics


    Original     		PDF S72WS256N 16-bit) 16-bit S72WS

    A04g

    Abstract: A05G M62352AGP
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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