a104
Abstract: heatsink calculation DD435N KM17 A104 diode sechspuls-bruckenschaltung
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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DD435N
A104/98
a104
heatsink calculation
DD435N
KM17
A104 diode
sechspuls-bruckenschaltung
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DD435N
Abstract: KM17
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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DD435N
DD435N
KM17
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DD435N
Abstract: KM17 KM17 equivalent
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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DD435N
DD435N
KM17
KM17 equivalent
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a106 diode
Abstract: diode A106 ADA750F 178289-5 ada1000f-24 A-102 AC264V ADA750F-24 ada750 A102
Text: Instruction Manual Unit type 1 2 3 Function A-102 1.1 Input voltage range A-102 1.2 Inrush current limiting A-102 1.3 Overcurrent protection A-102 1.4 Peakcurrent protection A-102 1.5 Thermal protection A-102 1.6 Overvoltage protection A-102 1.7 Output voltage adjustment range
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ADA600F
ADA750F
ADA1000F
a106 diode
diode A106
ADA750F
178289-5
ada1000f-24
A-102
AC264V
ADA750F-24
ada750
A102
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M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
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apm28
Abstract: A104 diode
Text: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2804QA
-20V/-2
500mA.
APM2804
JESD-22,
apm28
A104 diode
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APM2807QB
Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)
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APM2807QB
-20V/-2
500mA.
JESD-22,
APM2807QB
ANPEC
APM2807
B102
JESD-22
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: 190 Series 50,000 Count True RMS DMMs 190 Series General Specifications & Accessories ACCESSORIES CO, Combustion & Combustibles Refrigeration Leak Detectors Digital Manometers Temperature Instruments IAQ: Air Flow/Humidity Digital Multimeters & Clamp-on Meters
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001mA)
001Hz)
0001kHz)
500mS,
500mA
20kHz)
001mV)
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transistor a115
Abstract: No abstract text available
Text: APS0601 High Speed Photosensor for Optocoupler Features General Description • 3.3V/5.5V Dual Supply Voltages • Low Power Consumption The APS0601 are optically coupled gates that combine a GaAsP light emitting diode and an integrated high gain • High Speed: 10MBd Typical
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APS0601
10MBd
-40oC
APS0601
JESD-22,
MIL-STD-883-3015
transistor a115
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ANPEC marking date code
Abstract: ANPEC JESD 51-7, ambient measurement APX9141
Text: APX9141 High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection Features • • • • • • • • General Description On-Chip Reverse Voltage Protection The APX9141 is an integrated Hall Effect Sensor IC de- On-Chip Hall Sensor signed for electric commutation of DC brushless motor
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APX9141
400mA
O-92M
APX9141
O-92M-2000
JESD-22,
ANPEC marking date code
ANPEC
JESD 51-7, ambient measurement
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apm30
Abstract: No abstract text available
Text: APM3015NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/50A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 -FP Reliable and Rugged Lead Free and Green Devices Available
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APM3015NFP
0V/50A,
O-220
APM3015N
O-220-FP
JESD-22,
apm30
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apm9946
Abstract: apm*9946 APM9946J ANPEC A102 A104 A108 B102 JESD-22
Text: APM9946J Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/6A, RDS ON =38mΩ (Typ.) @ VGS = 10V RDS(ON) =55mΩ (Typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of DIP−8 Lead Free and Green Devices Available
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APM9946J
APM9946
JESD-22,
apm9946
apm*9946
APM9946J
ANPEC
A102
A104
A108
B102
JESD-22
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Untitled
Abstract: No abstract text available
Text: APM6003NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/20A, G RDS ON =38mΩ (typ.) @ VGS=10V RDS(ON)=53mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)
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APM6003NFP
0V/20A,
O-220-FP
APM6003N
O-220-FP
JESD-22,
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APM1102PFP
Abstract: No abstract text available
Text: APM1102PFP P-Channel Enhancement Mode MOSFET Features • Pin Description SD -100V/-26A, G RDS ON =33mΩ (Typ.) @ VGS=-10V RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available (RoHS Compliant)
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APM1102PFP
-100V/-26A,
O-220-FP
APM1102P
O-220-FP
JESD-22,
APM1102PFP
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APM1102P
Abstract: apm1102pf
Text: APM1102PF P-Channel Enhancement Mode MOSFET Features • Pin Description SD -100V/-30A, G RDS ON =33mΩ (Typ.) @ VGS=-10V RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant)
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APM1102PF
-100V/-30A,
O-220
APM1102P
O-220
JESD-22,
apm1102pf
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APM1102P
Abstract: APM1102PF apm11
Text: APM1102PF P-Channel Enhancement Mode MOSFET Features • Pin Description SD -100V/-30A, G RDS ON =33mΩ (Typ.) @ VGS=-10V RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant)
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APM1102PF
-100V/-30A,
O-220
APM1102P
APM1102P
JESD-22,
APM1102PF
apm11
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APM6006NFP
Abstract: APM6006 21M025 APM60
Text: APM6006NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/34A, G RDS ON =21mΩ (typ.) @ VGS=10V RDS(ON)=29mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)
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APM6006NFP
0V/34A,
O-220-FP
APM6006N
O-220-FP
JESD-22,
APM6006NFP
APM6006
21M025
APM60
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APM60
Abstract: No abstract text available
Text: APM6005NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/80A, G RDS ON =4.5mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications
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APM6005NF
0V/80A,
O-220
APM6005N
O-220
JESD-22,
APM60
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APM3109
Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated
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APM3109NU
0V/50A,
O-252-3
APM3109N
APM31093
JESD-22,
APM3109
APM3109NU
MOSFET N 30V 30A 252
A102
A104
A108
B102
JESD-22
J-STD-020D
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APM9926C
Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
Text: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available
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APM9926CCG
APM9926C
APM9926C
M9926C
JESD-22,
M9926
GEM2928
A108
B102
JESD-22
APM9926CCG
APM9926CC
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APM2605
Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
Text: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available
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APM2605C
-30V/-4
OT-23-6
APM2605
JESD-22,
APM2605
APM2605C
JESD-22
J-STD-020D
MARKING A104 SOT
AAAX
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APM9935
Abstract: APM9935K B102 JESD-22
Text: APM9935K Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 D1 D2 D2 -20V/-6A, RDS ON =30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8
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APM9935K
-20V/-6A,
JESD-22,
APM9935
APM9935K
B102
JESD-22
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APM1104P
Abstract: 20A, 50V, P-Channel APM1104PG apm11
Text: APM1104PG P-Channel Enhancement Mode MOSFET Features • Pin Description -100V/-90A, RDS ON =15mΩ (Typ.) @ VGS=-10V RDS(ON)=18mΩ (Typ.) @ VGS=-4.5V • • D G S Reliable and Rugged Top View of TO-263-3 Lead Free and Green Devices Available (RoHS Compliant)
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APM1104PG
-100V/-90A,
O-263-3
APM1104P
APM1104P
JESD-22,
20A, 50V, P-Channel
APM1104PG
apm11
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MIP0224SY
Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Text: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise
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ZUP-200
1A548-79-01
R-2-12
R-13-14
R-15-16
R-17-30
ZUP-200
RCR-9102)
MIL-HDBK-217F.
GENRAD-2503.
MIP0224SY
2SK1937
t201 transformer
M51995AFP
mip0224
Nemic-Lambda CN
d1fl20u
0134G
ZUP20
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