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    A1015 TO92 Search Results

    A1015 TO92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS7A1015PDSER Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PYKAR Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 5-DSBGA -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PDSET Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    UE36A10152000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, GXT plating Visit Amphenol Communications Solutions
    UE36A10153000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, Gold plating Visit Amphenol Communications Solutions

    A1015 TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR

    A1015 gr

    Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units


    Original     		PDF A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage


    Original     		PDF A1015 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


    Original     		PDF A1015 -100mA, -10mA 30MHz

    a1015 transistor

    Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
    Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage


    Original     		PDF A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015

    Untitled

    Abstract: No abstract text available
    Text: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2


    Original     		PDF A1015 -100mA, -10mA 30MHz 01-June-2002

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


    Original     		PDF A1015 -100mA, -10mA 30MHz

    A1015

    Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent
    Text: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


    Original     		PDF A1015 A1015-O A1015-Y A1015-GR 04-Mar-2011 -100mA, -10mA 30MHz A1015 A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent

    a1015 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


    Original     		PDF A1015 -100mA, -10mA 30MHz a1015 transistor

    sa1015

    Abstract: A1015 gr A1015 GSA1015 GSC1815
    Text: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V


    Original     		PDF A1015 2004/11/29B GSA1015 GSC1815 sa1015 A1015 gr A1015 GSC1815

    A1015 gr

    Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
    Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage


    Original     		PDF A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR

    Untitled

    Abstract: No abstract text available
    Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA


    Original     		PDF KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    CON32A

    Abstract: SRM20256LM10 SED1352 interfacing lcd with 8086 SED1352F0B T724AB A1015 equivalent smd transistor va6 va6 smd MC68000
    Text: SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,


    Original     		PDF SED1352F0B SED1352F0B X16-AN-006-03 25MHz 12MHz 25MHz 12Mhz CON32A SRM20256LM10 SED1352 interfacing lcd with 8086 T724AB A1015 equivalent smd transistor va6 va6 smd MC68000

    SED1352

    Abstract: CON32A lcd 2X16 Epson lcd Epson 2x16 74ls00 SED1352FOB 2n3905 CON40A I8086 SMD LD3
    Text: SED1352 Graphics LCD Controller SED1352 TECHNICAL MANUAL Document Number: X16B-Q-001-06 Copyright 1997, 1998 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF SED1352 SED1352 X16B-Q-001-06 SED1352: X16-AN-005-07 CON32A lcd 2X16 Epson lcd Epson 2x16 74ls00 SED1352FOB 2n3905 CON40A I8086 SMD LD3

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    A1015

    Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
    Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range


    OCR Scan     		PDF A1015 A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92

    A1015

    Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
    Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e


    OCR Scan     		PDF A1015 -55X2- A1015 A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015

    LM317T vw

    Abstract: A1015 equivalent LCD 16X4 mc68000 S-MOS SYSTEMS INC seD1352 MC68000 schematics
    Text: S-MOS S Y S T E M S A Seiko Epson Affiliate SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,


    OCR Scan     		PDF SED1352F0B X16-AN-006-03 713E1QR QQ05QQ5 25MHz 12Mhz LM317T vw A1015 equivalent LCD 16X4 mc68000 S-MOS SYSTEMS INC seD1352 MC68000 schematics

    LM317T vw

    Abstract: TS2D 64SED IC 74LS00 transistor AE code PNP smd
    Text: S-MOS S Y S T E M S A Seiko Epson. Affiliale SED1352 Graphics LCD Controller SED1352 TECHNICAL MANUAL Issue Date: 98/01/27 Document No. X16B-Q-001-04 C o p y r ig h t 1997, 1998 S -M O S S y s te m s Inc. A ll rig h ts re served . T h is d o c u m e n t, and a n y text d e rived, e x tra c te d o r tra n s m itte d fro m it, is th e so le p ro p e rty of S -M O S S yste m s Inc. and m a y not b e use d , cop ie d,


    OCR Scan     		PDF SED1352 X16B-Q-001-04 SED1352: X16-AN-005-05 X16-AN-005 LM317T vw TS2D 64SED IC 74LS00 transistor AE code PNP smd