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    A1015 GR W Search Results

    A1015 GR W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPS7A1015PDSER Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PYKAR Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 5-DSBGA -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PDSET Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy

    A1015 GR W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2


    Original     		PDF A1015 -100mA, -10mA 30MHz 01-June-2002

    A1015 gr

    Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
    Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage


    Original     		PDF A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


    Original     		PDF A1015 -100mA, -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage


    Original     		PDF A1015 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


    Original     		PDF A1015 -100mA, -10mA 30MHz

    sa1015

    Abstract: A1015 gr A1015 GSA1015 GSC1815
    Text: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V


    Original     		PDF A1015 2004/11/29B GSA1015 GSC1815 sa1015 A1015 gr A1015 GSC1815

    A1015 gr 331

    Abstract: IR3Y26 LA7605 LA7642N LA7605-LCD s1815 LA7605N 27k 3kv tl1451 A1015 gr
    Text: 2 3 +12 152 R76 4.7K 4.7K R79 4.3V 1U E23 E29 273 NC KRF FOF 4.43M IDF 4.0F R-Y 470U/25V Vin 3 Vout GND 102 E42 220U/16V 220U/16V SPK C32 104 R110 CHROMA 472 101 R63 3 103 221 C46 1U R29 SP1 E53 2 EOU VCC NC 19 20 18 VI 17 KILL 16 4.43 SYS 15 SAND 1 CON2 AUDIO


    Original     		PDF 470U/25V 220U/16V 2SC1815 \LA7605-LCD A1015 gr 331 IR3Y26 LA7605 LA7642N LA7605-LCD s1815 LA7605N 27k 3kv tl1451 A1015 gr

    A1015 gr

    Abstract: Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W
    Text: Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF C306A3-T BTA1015A3 BTA1015A3 -150mA BTC1815A3. UL94V-0 A1015 gr Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W

    Untitled

    Abstract: No abstract text available
    Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA


    Original     		PDF KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA

    MCIMX51RM

    Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
    Text: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:


    Original     		PDF IMX51RMAD. MCIMX51 MCIMX51RM EL516 MCIMX51RM Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129

    A1015

    Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
    Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range


    OCR Scan     		PDF A1015 A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92

    28C17

    Abstract: No abstract text available
    Text: SGS-THOMSON M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max


    OCR Scan     		PDF M28C17 PDIP28 M28C17 28C17