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    A09 MOSFET Search Results

    A09 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    A09 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A09 MOSFET

    Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


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    PDF TSM7N65 ITO-220 O-220 TSM7N65 32nerty A09 MOSFET ITO-220 6A 650V MOSFET 32nC

    Power MOSFET SOT-223

    Abstract: mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114
    Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


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    PDF TSM2N60S OT-223 TSM2N60S Power MOSFET SOT-223 mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114

    Untitled

    Abstract: No abstract text available
    Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)() ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


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    PDF TSM2N60S OT-223 TSM2N60S

    TSM1N45CT

    Abstract: n-channel mosfet transistor
    Text: TSM1N45 450V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS


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    PDF TSM1N45 TSM1N45 TSM1N45CT n-channel mosfet transistor

    3680 MOSFET

    Abstract: TSM4425 p-channel mosfet TSM4425CS marking sop-8 P-Channel MOSFET code L 1A 27BSC
    Text: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram ● Advance Trench Process Technology


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    PDF TSM4425 TSM4425CS 20erty 3680 MOSFET TSM4425 p-channel mosfet marking sop-8 P-Channel MOSFET code L 1A 27BSC

    TSM2306

    Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    PDF TSM2306 OT-23 TSM2306CX TSM2306 IDA57 n-channel mosfet transistor n-channel mosfet SOT-23

    MOSFET N SOT-23

    Abstract: TSM3400CX marking 8A sot-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA TSM3400 n-channel mosfet SOT-23
    Text: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    PDF TSM3400 OT-23 TSM3400CX MOSFET N SOT-23 marking 8A sot-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA TSM3400 n-channel mosfet SOT-23

    n-channel mosfet transistor

    Abstract: 27BSC TSM4872
    Text: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    PDF TSM4872 TSM4872CS n-channel mosfet transistor 27BSC TSM4872

    Dual N-Channel MOSFET SOP8

    Abstract: 60V dual N-Channel trench mosfet
    Text: TSM4946D 60V Dual N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 60 Features ID (A) 55 @ VGS = 10V 4.5 75 @ VGS = 4.5V 3.9 Block Diagram ●


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    PDF TSM4946D TSM4946DCS Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet

    TSM4436

    Abstract: No abstract text available
    Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram ● Advance Trench Process Technology


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    PDF TSM4436 TSM4436CS TSM4436

    Untitled

    Abstract: No abstract text available
    Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram  Advance Trench Process Technology


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    PDF TSM4436 TSM4436CS

    Tsm4425

    Abstract: No abstract text available
    Text: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram  Advance Trench Process Technology


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    PDF TSM4425 TSM4425CS Tsm4425

    Untitled

    Abstract: No abstract text available
    Text: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


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    PDF TSM3400 OT-23 TSM3400CX

    A1 SOT-23 MOSFET P-CHANNEL

    Abstract: P-Channel MOSFET code 1A TSM2307CX TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET
    Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    PDF TSM2307 OT-23 TSM2307CX A1 SOT-23 MOSFET P-CHANNEL P-Channel MOSFET code 1A TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET

    n-channel mosfet transistor

    Abstract: 27BSC
    Text: TSM4404 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 30 RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 8.5 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features ● Advance Trench Process Technology


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    PDF TSM4404 TSM4404CS n-channel mosfet transistor 27BSC

    Untitled

    Abstract: No abstract text available
    Text: TSM4404 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 30 RDS(on)(m) ID (A) 30 @ VGS = 10V 8.5 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features  Advance Trench Process Technology


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    PDF TSM4404 TSM4404CS

    Untitled

    Abstract: No abstract text available
    Text: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


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    PDF TSM4872 TSM4872CS

    Untitled

    Abstract: No abstract text available
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram  Low On-Resistance  ESD Protection  High Speed Switching  Low Voltage Drive


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    PDF TSM2N7000K TSM2N7000KCT

    TSM2N7000KCT

    Abstract: TSM2N7000KCT-A3 n-channel mosfet transistor TSM2N7000K mosfet to92 high current mosfet to92 low voltage A09 MOSFET
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●


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    PDF TSM2N7000K TSM2N7000KCT TSM2N7000KCT-A3 n-channel mosfet transistor TSM2N7000K mosfet to92 high current mosfet to92 low voltage A09 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RT9702/A 80mΩ Ω, 500mA/1.1A High-Side Power Switches with Flag General Description Features The RT9702 and RT9702A are cost-effective, low voltage, single N-Channel MOSFET high-side power switches, optimized for self-powered and bus- powered Universal


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    PDF RT9702/A 500mA/1 RT9702 RT9702A RT9702/A TSOT-23-5 DS9702/A-09

    Untitled

    Abstract: No abstract text available
    Text: PPJA3409 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -2.9A Current Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-2.9A<110mΩ  RDS(ON) , VGS@-4.5V, ID@-1.9A<150mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.


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    PDF PPJA3409 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    RT9173A

    Abstract: RT9173acl5 RT9173CS RT9173 2N7002 RT9173ACM5
    Text: RT9173/A 1.5A/3A Bus Termination Regulator Features General Description The RT9173/A regulator is designed to convert voltage supplies ranging from 1.6V to 6V into a desired output voltage which adjusted by two external voltage divider resistors. The regulator is


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    PDF RT9173/A RT9173/A RT9173/A, DS9173/A-09 DS9173/A-08 RT9173A RT9173acl5 RT9173CS RT9173 2N7002 RT9173ACM5

    Untitled

    Abstract: No abstract text available
    Text: RT9203/A Preliminary Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9203/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck


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    PDF RT9203/A RT9203/A 300kHz DS9203/A-09

    atx SMPS CIRCUIT DIAGRAM

    Abstract: 2SD5706 smps control ic With MOSFET Driver 1N5819 2SD1802 PHB108NQ03LT PHB66NQ03LT PHKD6N02LT RT9205 3.3V 5V buck regulator atx power supply
    Text: RT9205/A Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9205/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck


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    PDF RT9205/A RT9205/A 14-pin 300kHz DS9205/A-09 atx SMPS CIRCUIT DIAGRAM 2SD5706 smps control ic With MOSFET Driver 1N5819 2SD1802 PHB108NQ03LT PHB66NQ03LT PHKD6N02LT RT9205 3.3V 5V buck regulator atx power supply