marking H1
Abstract: MARKING P98 marking TPl p104
Text: Image of case size Tantalum Solid Capacitors with Conductive Polymer Unit:mm S09 Selection guide size POSCAP Line-up Image of case size Products list Explanation of part numbers Packing specifications Selection guide Series system diagram A09 size size
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5502M
Abstract: 5502-M
Text: Packing specifications *We supply only embossed taping type. Dimension of carrier tape E Component compartment J Polarity D Sprocket hole (–) B C A F G H Direction of unreeling Size code A ±0.1 B ±0.1 S09 1.65 S11 1.65 A09 (unit:mm) C ±0.3 D ±0.1 E ±0.1
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marking code d2e
Abstract: marking code 27
Text: Recommended land pattern dimension Tantalum Solid Capacitors with Conductive Polymer Except for TPL/TPLF series unit:mm a b c S09 1.0 0.9 0.6 S11 1.0 0.9 0.6 A09 1.6 1.2 1.2 B09 1.6 2.7 1.4 B1 1.6 2.7 1.4 B1G 1.6 2.7 1.4 B15G 1.6 2.7 1.4 B2 1.6 2.7 1.4 B2S
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marking s11
Abstract: TPSF capacitors TPC D425 TPL 250
Text: Products list Tantalum Solid Capacitors with Conductive Polymer Case size S09 S11 A09 B09 B1 B1G B15G B2 B2S C1 C2 C3 C D2E L 2.0 2.0 3.2 3.5 3.5 3.5 3.5 3.5 3.5 6.0 6.0 6.0 6.0 7.3 7.3 W 1.25 1.25 1.6 2.8 2.8 2.8 2.8 2.8 2.8 3.2 3.2 3.2 3.2 4.3 H 0.9 1.1
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PFR 215 N
Abstract: 60v 9A 185-PFRA 250-PFRA
Text: PFRA Polymeric PTC Resettable Fuse - Radial Leaded A0 10 PFR A0 PFR 17 A PFR 020 A PFR 025 A PFR 030 A PFR 040 A PFR 050 A PFR 065 A PFR 075 A PFR 090 -0- A09 009 0 PFR A PFR 110 A PFR 135 A PFR 160 A PFR 185 A 25 0 2 5 0 , -0PFR 010 A PFR 300 A PFR 400 A
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marking u6
Abstract: marking U7 MARK A7 Marking N8 tantalum A8 TPSF marking s11 marking Y6 TPf series
Text: Marking ●C2, C3, D2E, D3L size TPB, TPE, TPF series ●D4, D4D size (TPD, TPE series) Rated capacitance 470 e 58 L Rated capacitance 680 e 57 Anode(+) Lot. No.※2 ●B09, B1, B1G, B15G, B2 size (TPB, TPC, TPG, TPU, TQC series) Rated capacitance※3
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POSCAP
Abstract: No abstract text available
Text: Surface mount type TPH Series OS-CON Line-up RoHS compliance, Halogen free Small size, Low profile: L3.2xW1.6xH0.9mm Face down terminal type Guidelines and precautions Specifications Items Selection guide Condition Rated voltage V − Surge voltage (V)
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120Hz/20â
6TPH47MHA
4TPH68MHA
ETPH100MHA
4TPH150MABC
6TPH100MABC
6TPH100MAEA
ETPH220MABC
POSCAP
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A09 MOSFET
Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
32nerty
A09 MOSFET
ITO-220
6A 650V MOSFET
32nC
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Power MOSFET SOT-223
Abstract: mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114
Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60S
OT-223
TSM2N60S
Power MOSFET SOT-223
mosfet 600V 6A N-CHANNEL
TSM2N60SCW
600V 2A MOSFET N-channel
pin diagram of MOSFET
Diode bridge 600V 0.8A
"Power MOSFET"
a09 marking
MOSFET 450
mosfet j 114
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Untitled
Abstract: No abstract text available
Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)() ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60S
OT-223
TSM2N60S
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6TPH100MAEA
Abstract: ETPH220MABC 6TPH47MHA
Text: Surface mount type TPHSeries RoHS compliance Small size・Low ESR Face down terminal type New TPH series is designed to save space by its face down terminal structure and respond to lower ESR needs. Specifications Items Condition Specifications Rated voltage
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120Hz/20
100kHz/20
Z/Z20
resis00kHz/20
100kHz1
ATPH33MAHA2
6TPH100MAEA
ETPH220MABC
6TPH47MHA
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6TPU47MAI
Abstract: c6090 6TPU22MSI 6TPU33MSK 2R5TPU47MSI 10TPU33MAI marking s11 6TPU10MSI 4TPU47MSK TH 510
Text: Surface mount type TPU RoHS compliance Series Small size ・ Low profile Face down terminal type TPU series has a real advantage in size-sensitive applications using a face down terminal structure. TPU TPC Small size Low profile • Specifications Items
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120Hz/20
100kHz/20
Z/Z20
500kHz
6TPU47MAI
c6090
6TPU22MSI
6TPU33MSK
2R5TPU47MSI
10TPU33MAI
marking s11
6TPU10MSI
4TPU47MSK
TH 510
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TSM1N45CT
Abstract: n-channel mosfet transistor
Text: TSM1N45 450V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
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TSM1N45
TSM1N45
TSM1N45CT
n-channel mosfet transistor
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A09 resistor network
Abstract: B1578 L05 MARKING
Text: MRP precision metal film resistor SIP network NEW features • • • • • Custom design network Ultra-precision performance for precision analog circuits Tolerance to ±0.1%, matching to 0.05% T.C.R. to ±25ppm/°C, tracking to 2ppm/°C Marking: Black body color with white marking
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25ppm/
49oom
A09 resistor network
B1578
L05 MARKING
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3680 MOSFET
Abstract: TSM4425 p-channel mosfet TSM4425CS marking sop-8 P-Channel MOSFET code L 1A 27BSC
Text: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram ● Advance Trench Process Technology
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TSM4425
TSM4425CS
20erty
3680 MOSFET
TSM4425
p-channel mosfet
marking sop-8
P-Channel MOSFET code L 1A
27BSC
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TSM2306
Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2306
OT-23
TSM2306CX
TSM2306
IDA57
n-channel mosfet transistor
n-channel mosfet SOT-23
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TS358CD
Abstract: No abstract text available
Text: TS358 Single Supply Dual Operational Amplifiers SOP-8 DIP-8 Pin assignment: 1. Output A 8. Vcc 2. Input A - 7. Output B 3. Input A (+) 6. Input B (-) 4. Gnd 5. Input B (+) General Description Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational
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TS358
LM741
TS358CD
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Untitled
Abstract: No abstract text available
Text: RT9261/A Preliminary VFM Step-up DC/DC Converter General Description Features The RT9261 Series are VFM Step-up DC/DC ICs with ultra low supply current by CMOS process and suitable for use with battery-powered instruments. z The RT9261 IC consists of an oscillator, a VFM control
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RT9261/A
RT9261
OT-89
OT-23-5
DS9261/A-09
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MOSFET N SOT-23
Abstract: TSM3400CX marking 8A sot-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA TSM3400 n-channel mosfet SOT-23
Text: TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM3400
OT-23
TSM3400CX
MOSFET N SOT-23
marking 8A sot-23
n-channel mosfet transistor
Power MOSFET N-Channel sot-23
ultra low igss pA
TSM3400
n-channel mosfet SOT-23
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n-channel mosfet transistor
Abstract: 27BSC TSM4872
Text: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM4872
TSM4872CS
n-channel mosfet transistor
27BSC
TSM4872
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biquad filter using op-amp
Abstract: TS324
Text: TS324 Low Power Quad Operational Amplifiers DIP-14 SOP-14 Pin Definition: 1. Output A 14. Output D 2. Input A - 13. Input D (-) 3. Input A (+) 12. Input D (+) 4. Vcc 11. Gnd 5. Input B (+) 10. Input C (+) 6. Input B (-) 9. Input C (-) 7. Output B 8. Output C
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TS324
DIP-14
OP-14
TS324
biquad filter using op-amp
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Dual N-Channel MOSFET SOP8
Abstract: 60V dual N-Channel trench mosfet
Text: TSM4946D 60V Dual N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 60 Features ID (A) 55 @ VGS = 10V 4.5 75 @ VGS = 4.5V 3.9 Block Diagram ●
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TSM4946D
TSM4946DCS
Dual N-Channel MOSFET SOP8
60V dual N-Channel trench mosfet
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TSM4436
Abstract: No abstract text available
Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram ● Advance Trench Process Technology
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TSM4436
TSM4436CS
TSM4436
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Untitled
Abstract: No abstract text available
Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 60 Features ID (A) 36 @ VGS = 10V 4.6 43 @ VGS = 4.5V 4.2 Block Diagram Advance Trench Process Technology
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TSM4436
TSM4436CS
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