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    A0-A12, ONE DATA PIN SRAM Search Results

    A0-A12, ONE DATA PIN SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
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    A0-A12, ONE DATA PIN SRAM Price and Stock

    Microchip Technology Inc ATMEGA809-AU

    MCU - 8-bit AVR - 8KB Flash - 1KB SRAM - 20MHz - 1.8-5.5V - -40°C to +85°C - 48-Pin TQFP - Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ATMEGA809-AU 750
    • 1 -
    • 10 -
    • 100 $1.31
    • 1000 $1.18
    • 10000 $1.1
    		Buy Now

    Microchip Technology Inc ATSAMC21N18A-AN

    MCU - 32-bit ARM Cortex M0+ - 256KB Flash - 32KB SRAM - 3.3V/5V - 100-Pin TQFP - Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ATSAMC21N18A-AN 270
    • 1 -
    • 10 $4.78
    • 100 $4.25
    • 1000 $4.01
    • 10000 $3.89
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    Integrated Device Technology Inc IDT70V3389S4BCG

    SRAM Chip Sync Dual 3.3V 1.125M-bit 64K x 18 4.2ns 256-Pin CABGA - Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IDT70V3389S4BCG 74
    • 1 $172.54
    • 10 $172.54
    • 100 $74.08
    • 1000 $74.08
    • 10000 $74.08
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    Microchip Technology Inc ATMEGA808-XUR

    MCU - 8-bit AVR - 8KB Flash - 1KB SRAM - 20MHz - 1.8-5.5V - -40°C to +85°C - 28-Pin SSOP - Tape&Reel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ATMEGA808-XUR
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.22
    • 10000 $0.78
    		Buy Now

    Microchip Technology Inc ATMEGA808-AF

    MCU - 8-bit AVR - 8KB Flash - 1KB SRAM - 20MHz - 1.8-5.5V - -40°C to +125°C - 32-Pin TQFP - Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ATMEGA808-AF
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.15
    • 10000 $1.15
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    Find more A0-A12, ONE DATA PIN SRAM price and stock on Findchips.com

    A0-A12, ONE DATA PIN SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    block diagram of of TMS320C4X

    Abstract: 8L32512
    Text: EDI8L32512C 512Kx32 SRAM Module 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns The EDI8L32512C is a high speed, 5V, 16 megabit SRAM.


    Original     		PDF EDI8L32512C 512Kx32 DSP96002 TMS320C3x, TMS320C4x M0-47AE EDI8L32512C makQ03 01581USA block diagram of of TMS320C4X 8L32512

    intel 80196 microcontroller

    Abstract: 6164 ram memory intel 80196 microcontroller development board ram 6164 m6809 intel 6164 ram sram 6164 datasheet microprocessor 80286 internal architecture intel 80196 microcontroller pin diagram 80196 internal architecture diagram
    Text: Programmable Peripheral Application Note 011 PSD3XX Device Description Chapter 1 Introduction The PSD3XX family of products include flexible I/O ports, PLD, Page Register, 256K to 1M EPROM, 16K bit SRAM and “Glueless” Logic Interface to the microcontroller. The PSD3XX


    Original     		PDF

    intel 80196 microcontroller

    Abstract: M68230 M68008 m6809 intel 80196 assembly language intel 80196 microcontroller pin diagram M6809 cpu 80C196 assembly language 6116 sram file type memory mapping 6809B
    Text: Programmable Peripheral Application Note 011 PSD3XX Device Description Chapter 1 Introduction The PSD3XX family of products include flexible I/O ports, PLD, Page Register, 256K to 1M EPROM, 16K bit SRAM and “Glueless” Logic Interface to the microcontroller. The PSD3XX


    Original     		PDF

    80 pin simm flash

    Abstract: 085 CS simm 72 pin SIMM 80 jedec DS2229
    Text: DS2229 DS2229 Word-Wide 8 Meg SRAM Stik FEATURES PIN ASSIGNMENT • Organized as a high density 512K x 16 bit StikTM 1 • Fast access time of 85 ns • Unlimited write cycles 1M SRAM • Employs popular JEDEC standard 80-position SIMM connector • Full +10% operating range


    Original     		PDF DS2229 80-position 80-pin DS2229 608-bit 80 pin simm flash 085 CS simm 72 pin SIMM 80 jedec

    DS2229

    Abstract: No abstract text available
    Text: DS2229 DS2229 Word-Wide 8 Meg SRAM Stik FEATURES PIN ASSIGNMENT • Organized as a high density 512K x 16 bit StikTM 1 • Fast access time of 85 ns • Unlimited write cycles 1M SRAM • Employs popular JEDEC standard 80-position SIMM connector • Full +10% operating range


    Original     		PDF DS2229 80-position 80-pin DS2229 608-bit

    DS1643

    Abstract: DS1643P DS164XP DS9034PCX DS1643-120
    Text: DS1643/DS1643P PRELIMINARY DS1643/DS1643P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Clock registers are accessed identical to the static


    Original     		PDF DS1643/DS1643P DS1643P DS9034PCX DS1643 DS164XP DS1643-120

    DS1743

    Abstract: DS1743P DS1743WP DS9034PCX
    Text: Back DS1743/DS1743P PRELIMINARY DS1743/DS1743P Y2KC Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power• Clock registers are accessed identical to the static RAM. These registers are resident in the eight top


    Original     		PDF DS1743/DS1743P DS1743P DS9034PCX DS1743 DS1743WP

    tce2a

    Abstract: DS1743 DS1743P DS1743WP DS9034PCX
    Text: DS1743/DS1743P PRELIMINARY DS1743/DS1743P Y2KC Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power• Clock registers are accessed identical to the static RAM. These registers are resident in the eight top


    Original     		PDF DS1743/DS1743P DS1743P DS9034PCX tce2a DS1743 DS1743WP

    DS1743

    Abstract: DS1743P DS1743WP DS9034PCX
    Text: DS1743/DS1743P PRELIMINARY DS1743/DS1743P Y2KC Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power• Clock registers are accessed identical to the static RAM. These registers are resident in the eight top


    Original     		PDF DS1743/DS1743P DS1743P DS9034PCX DS1743 DS1743WP

    DS1643

    Abstract: DS1643P DS164XP DS9034PCX DS1643-150
    Text: DS1643/DS1643P DS1643/DS1643P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Clock registers are accessed identical to the static RAM. These registers are resident in the eight top


    Original     		PDF DS1643/DS1643P DS1643P DS9034PCX DS1643 DS164XP DS1643-150

    2k x 8 nvram

    Abstract: dallas nvram A9 sot223 3-Pin Microprocessor Reset A18 sot DS1233B DS1630 A16 SOT DS1233 a5 DS1220
    Text: APPLICATION NOTE 51 Application Note 51 How to Save Data During A Power Failure Without Corrupting It For many memory systems requiring nonvolatile memory, Dallas Semiconductor NVRAMs offer an SRAM’s ease of implementation coupled with write protection circuitry and a 10 year information storage


    Original     		PDF alreaS1245 DS1645 DS1650 2k x 8 nvram dallas nvram A9 sot223 3-Pin Microprocessor Reset A18 sot DS1233B DS1630 A16 SOT DS1233 a5 DS1220

    MK48T08

    Abstract: 34-pin DS1643
    Text: DS1643AL PRELIMINARY DS1643AL Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Functionally compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Clock


    Original     		PDF DS1643AL MK48T08 DS1643AL 34-pin DS1643

    TMS320C30

    Abstract: TMS320C32 hb 2 lb
    Text: Interfacing Memory to the TMS320C32 DSP Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., June 1996 SPRA040A Application Report Interfacing Memory to the TMS320C32 DSP 1995 Interfacing Memory to the TMS320C32 DSP Peter Galicki


    Original     		PDF TMS320C32 SPRA040A TMS320C30 hb 2 lb

    Untitled

    Abstract: No abstract text available
    Text: September 2006 AS7C256B 5V 32K X 8 CMOS SRAM Common I/O Features • Industrial (-40o to 85oC) temperature • Organization: 32,768 words x 8 bits • High speed • 28-pin JEDEC standard packages - 300 mil SOJ - 8 × 13.4 mm TSOP - 300 mil PDIP - 15 ns address access time


    Original     		PDF AS7C256B 28-pin

    65530

    Abstract: TMS320C30 TMS320C32
    Text: Interfacing Memory to the TMS320C32 DSP Peter Galicki Digital Signal Processing Solutions—Semiconductor Group SPRA040A June 1996 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


    Original     		PDF TMS320C32 SPRA040A 20000h 27FFFh 40000h 80000h 43FFFh 87FFFh 65530 TMS320C30

    CQFP 240 Aeroflex

    Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
    Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times


    Original     		PDF S512K32 MIL-PRF-38534 MIL-STD-883 MIL-STD-883 SCD1660 CQFP 240 Aeroflex 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855

    MK48T08

    Abstract: DS1643 DS1643-150
    Text: DS1643 DS1643 Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Form, fit, and function compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Standard JEDEC bytewide 8K x 8 static RAM pinout


    Original     		PDF DS1643 MK48T08 DS1643 MK48T08 DS1643-150

    Untitled

    Abstract: No abstract text available
    Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times


    Original     		PDF S512K32 MIL-STD-883 MIL-STD-883 SCD1660

    256kx1

    Abstract: 22A16 EDI81257CB A710C 256Kx1 bit A34C
    Text: ^EDI EDI81257CB Electronic Design» Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL


    OCR Scan     		PDF EDI81257CB 256Kx1 EDI81257CB MIL-STD-883, A0VCCA17 A0-A17 22A16 A710C 256Kx1 bit A34C

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI811024C 35/ 45/ 55/70 Monolithic The f u t u r e . . . today. Ä E W Ä M E D M F© ß?M Ä T[]© [N I 1024KX1 SRAM CMOS, High Speed Monolithic Features The ED 1811024C is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use


    OCR Scan     		PDF EDI811024C 1024KX1 1811024C EDI811024C 500mW A0-A19

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI81257CB Electronic D*$lgnt Inc. High Speed 256K Monolithic SRAM M WM E 0iF©MM1]©i 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB Is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each, inputs and outputs are TTL


    OCR Scan     		PDF EDI81257CB 256Kx1 EDI81257CB EDIB1257CB

    uln buffer

    Abstract: si1084
    Text: ^EDI EDI81257CB Electronic Design» inc. High Speed 256K Monolithic SRAM OiF@M/OTD[N] 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 256Kx1 bit CMOS Static


    OCR Scan     		PDF EDI81257CB 256Kx1 EDI81257CB MIL-STD-883, uln buffer si1084

    256kx1

    Abstract: SRAM flatpack EDI81257CB AL624 wv-ss 8A79
    Text: EDI81257CB ^EDI Electronic D*lgn» inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic M WM E 0iF©MM1]©i Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL


    OCR Scan     		PDF EDI81257CB 256Kx1 EDI81257CB MIL-STD-883, A0-A17 A0VCCA17 SRAM flatpack AL624 wv-ss 8A79

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI84256C 35/45/55/70 Monolithic The future. today. OIN1F I^MÄTO©IN! 256K X 4 SRAM CMOS, High Speed Monolithic Features The EDI84256C is an extremely high density, 256Kx4 bit high speed Static RAM designed for use in systems where fast computation, low power and


    OCR Scan     		PDF EDI84256C EDI84256C 256Kx4 time00mW 150fiW A0-A17