BFQ67W
Abstract: PMBT3640 PMBTH10 BFM520
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE
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OT143
OT223
OT323
BFT25
BF747
BF547
BF547W
BFS17
BFS17W
BF689K
BFQ67W
PMBT3640
PMBTH10
BFM520
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BFR520
Abstract: 900MHZ
Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.
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BFR520
OT-23
BFR520
06-Feb-07
OT-23
900MHZ
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BFG540
Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
Text: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG540;
BFG540/X;
BFG540/XR
BFG540
BFG540XR
BFG540X
fibreoptical
MRA751
PHILIPS BFG540
MRA760
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BFT92
Abstract: BFR92A P2 bft92 die BFR92 BFR92A application note BFR90A BFR92A MSB003
Text: BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFR92A
BFR92A
BFT92
BFR92A P2
bft92 die
BFR92
BFR92A application note
BFR90A
MSB003
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BFQ591
Abstract: DIN45004B
Text: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFQ591
BFQ591
771-BFQ591-T/R
DIN45004B
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BFQ591
Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
Text: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFQ591
E20071002
BFQ591
transistor 09013 NPN
09013 NPN
DIN45004B
philips MATV amplifiers
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain
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BFQ270
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
SFR16T
philips MR25
npn 2222 transistor
ZO 103 MA 75 533
resistor MR25
Miniature Ceramic Plate Capacitors 2222 philips
MR25 resistor
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NTE2402
Abstract: No abstract text available
Text: NTE2402 NPN & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies.
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NTE2402
NTE2403
500MHz,
25MHz
NTE2402
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Untitled
Abstract: No abstract text available
Text: 2013-06-21 Mini TOPLED Datasheet Version 1.0 not for new design LY M47K Features: Besondere Merkmale: • Package: white SMT package, colorless clear resin • Technology: InGaAlP • Viewing angle at 50 % IV: 120° (Lambertian Emitter) • Color: yellow (587 nm)
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D-93055
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BFG591,115
Abstract: BFG591 Application Notes
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain
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BFG591
BFG591
OT223
MSB002
OT223.
R77/02/pp14
771-BFG591-T/R
BFG591,115
BFG591 Application Notes
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SOT23 W1P NXP
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
MSB003act
R77/02/pp10
SOT23 W1P NXP
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BFR93 application note
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFR93 application note
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Untitled
Abstract: No abstract text available
Text: 2013-09-27 TOPLED Datasheet Version 1.0 not for new design LH T674 TOPLED, SMT LED with integrated reflector. With our great experience in SMT LED we are able to offer a high quality product for all kind of applications. TOPLED, SMT-LED mit integriertem Reflektor. Mit
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D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-04-04 TOPLED Datasheet Version 1.1 not for new design LT T67S TOPLED, SMT LED with integrated reflector. With our great experience in SMT LED we are able to offer a high quality product for all kind of applications. TOPLED, SMT-LED mit integriertem Reflektor. Mit
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D-93055
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B35AP
Abstract: No abstract text available
Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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bbS3S31
BFQ34T
ON4497)
B35AP
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TRANSISTOR ML6
Abstract: No abstract text available
Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures
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bb53T31
BFQ270
OT172A1
TRANSISTOR ML6
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Untitled
Abstract: No abstract text available
Text: P hilips S em iconductors Product specification PNP 4 GHz wideband transistor FEATURES BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product 1 DESCRIPTION • Good thermal stability 2 base • Gold metallization ensures excellent reliability.
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BFG55
OT223
OT223.
BFG35.
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NPN transistor SST 117
Abstract: No abstract text available
Text: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency
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BFR540
BFR540
NPN transistor SST 117
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B 1449 transistor
Abstract: S03 pnp 156 35K 301 BFG35 BFG55 dh 0734 2493 transistor
Text: Philips S em iconductors M 71105gfa 00^6605 b? 7 H P H IN Product specification PNP 4 GHz wideband transistor FEATURES £ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures
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BFG55
OT223
BFG35.
OT223
MSB002
B 1449 transistor
S03 pnp
156 35K 301
BFG35
BFG55
dh 0734
2493 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz
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bb53T31
0D32142
BFW92A/02
BFW92A
BFW92
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial
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0D31815
BFR91
BFR91/02
ON4186)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast
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BFQ32S
BFR96S.
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BFR94
Abstract: BFR94A
Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross
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BFR94A
OT122E
BFR94A
BFR94.
Q031flfl3
BFR94
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BFR90 transistor
Abstract: BFR90 BFR90 PHILIPS
Text: Philips Semiconductors Product specification bbS3T31 00317Tfl Sflb • APX NPN 5 GHz wideband transistor i BFR90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial
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bbS3T31
00317Tfl
BFR90
BFR90/02
BFQ51.
bb53T31
0D31602
BFR90 transistor
BFR90
BFR90 PHILIPS
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