socket AM2 pinout
Abstract: intel pentium 4 motherboard schematic diagram PGA370 pinout motherboard agtl layout manual components celeron pga370 MOTHERBOARD CIRCUIT diagram ink cartridge electrical pinout FC-PGA370 PGA370 motherboard agtl layout manual Socket AM2 Processor Functional Data Sheet
Text: Pentium III Processor for the PGA370 Socket at 500 MHz to 933 MHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available in 933, 866, 800EB, 733, 667, 600EB, and 533EB MHz for a 133 MHz system bus Available in 850, 800, 750, 700, 650, 600E, 550E, and 500E MHz for a 100 MHz system
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PGA370
800EB,
600EB,
533EB
133MHz
PGA370
socket AM2 pinout
intel pentium 4 motherboard schematic diagram
PGA370 pinout
motherboard agtl layout manual components
celeron pga370 MOTHERBOARD CIRCUIT diagram
ink cartridge electrical pinout
FC-PGA370
motherboard agtl layout manual
Socket AM2 Processor Functional Data Sheet
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yageo Phycomp 0805 capacitor
Abstract: yageo mlcc yageo Phycomp 1206 capacitor fusistor yageo Phycomp NPO capacitor TIP 3055 JAPAN Yageo Ceramic multilayer NPO infrared heating gun IC1 7555 1808 FOOTPRINT
Text: High-voltage MLCCs for power applications T1 D5 D2 R6 C3 R5 TR2 R1 18 pF 3 kV C1 2600 Vrms TR1 C2 R4 R3 R2 www.yageo.com 14 13 12 11 10 9 CN2 D1 High-voltage MLCCs for power applications Switched-mode power supplies, DC-to-DC converters and DC-to-AC inverters are nowadays widely used in
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A 933 S transistors
Abstract: No abstract text available
Text: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)
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2SC2412K/
2SC4081
/2SC4617
2SC1740S.
2SA1037AK
2SA1576A
SC-59
SC-70
2SA933AS
A 933 S transistors
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transistor SMD 1p6
Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
Text: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter
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Pf5103
BC807
BFG505X
BFG520
BB131
BFG54
transistor SMD 1p6
SMD transistor n36
TRANSISTOR N36 SMD
report on colpitts oscillator
a 933 transistor
Transistor 933
smd n43
transistor A 933
BFG520
A3 smd transistor spec
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A 933 S transistors
Abstract: 2SB1361 2SD2052 IS020
Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF
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2SD2052
2SB1361
tc-25
A 933 S transistors
2SB1361
2SD2052
IS020
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A 933 S transistors
Abstract: br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573
Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 D NPN Silicon Planar Transistors 2 N 2220 2 N 2221 2 N 2222 'S IE M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41 8 7 6 . The collector is electrically connected to the case. The transistors
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623SbOS
CK886
Q68000-A4573
Q62702-F134
Q62702-F135
A 933 S transistors
br 2222 npn
npn 2222
N 2222
2221-2N
2N2222
2N2221
Q62702-F134
Q62702-F135
Q68000-A4573
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A 933 S transistors
Abstract: N 2222 2N222 2221-2N TE 2221
Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors
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CK886
A 933 S transistors
N 2222
2N222
2221-2N
TE 2221
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A933S
Abstract: A 933 S A 933 S transistors A933 sc1740 2SC1740SLN 2SA933 2SC1740l
Text: K -y > y X £ /Transistors 2SC1740LN/2SC1740SLN 2 S C 1 7 4 0 LN " w W • m4 U M 5 L N • h7>y*$ NPN y y □ > Frecl- Low Noise AmPEpitaxial Planar NPN Silicon Transistors • ÿ H f iv H ill/ D im e n s io n s Unit : mm 1) V CE(sa.)=0.04V(at 10mA) ¿ l ' 0
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2SC1740LN/2SC1740SLN
SC1740L
SC1740SLN
A933S
A 933 S
A 933 S transistors
A933
sc1740
2SC1740SLN
2SA933
2SC1740l
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2SC200
Abstract: 2SA923 Transistor AF 138 2SC2089 2SC1908 2SC1740 transistor 2SC805A 138D 2SC1740 2SC2021
Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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100Hz
2SC2089
2SC2120
2SC200]
2SC200
2SA923
Transistor AF 138
2SC2089
2SC1908
2SC1740 transistor
2SC805A
138D
2SC1740
2SC2021
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2SD927
Abstract: transistor u8 2w 138D transistor st 932
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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7c-25
CTc-25
2SD927
transistor u8 2w
138D
transistor st 932
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BUZ73
Abstract: SD2822 7a2 diode diode 935 lg LG 932
Text: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3
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15tfic
BUZ73
SD2822
7a2 diode
diode 935 lg
LG 932
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2SA850
Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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175MHz,
100Hz,
iTc-25
2SA850
TRANSISTOR 2SA850
1729H
2SC1721
2SA854
2SA933
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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BLW99
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A 933 S transistors
Abstract: smps 450W ic F441 SGS transistors F341 f441 to3 HEATSINK SF341 aahp SGSIF341
Text: • 7^537 005.5177 _H ■ r 3 ._ SCS-THOMSON SGSF341/IF341 I*[hK»[I(OT(2 [*S SGSF441/IF441/F541 S G S - T HO MS ON 30E D FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EMITTER FOR FAST SW ITCHING
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SGSF341/IF341
SGSF441/IF441/F541
70kHz
500ms
A 933 S transistors
smps 450W
ic F441
SGS transistors
F341
f441
to3 HEATSINK
SF341
aahp
SGSIF341
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BLW99
Abstract: 5CCK MBH100
Text: N AMER PHILIPS/DISCRETE b^E bbSa1! » DGEtîS4li T73 BLW 99 IAPX H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor Intended fo r use in class-AB and B operated hlgh-power mobile transm itting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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BLW99
OT-121.
BLW99
5CCK
MBH100
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IRF452
Abstract: IRF450
Text: h e o I MassMsa odgiitö □ | INTERNATIONAL Data Sheet No. PD-9.322I re c tifie r INTERNATIONAL RECTIFIER I«R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* IRF45Q IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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T-39-13
IRF45Q
IRF451
IRF452
IRF453
O-204AA
IRF450
G-181
IRF450,
IRF451,
IRF452
IRF450
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lt 934 transistor
Abstract: 2SK23 K2365 A 933 S transistors
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N -Channel PACKAGE DIMENSIONS in m illim eters M O S F ield Effect T ran sistor d esig ned for high voltag e sw itchin g
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2SK2365/2SK2366
2SK2365,
2SK2365-Z
2SK2366,
2SK2366-Z
2SK2365:
2SK2366:
O-220
2SK2365/2SK2366)
lt 934 transistor
2SK23
K2365
A 933 S transistors
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rca 2n3375
Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)
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OCR Scan
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000-Series
2N1492
RCA-CA3000
RFT-700E/2L
1076R5
rca 2n3375
2N3553 equivalent
RCA TO60 TRANSISTORS
40281
40280
RCA RF POWER TRANSISTOR
CD2152
2N2876
RCA Transistors
rca power transistor
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A 933 S transistors
Abstract: S T A 933 2SD1987
Text: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features
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2SD1987
Pw--100ms
A 933 S transistors
S T A 933
2SD1987
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icm555
Abstract: A 933 S transistors M 3329 B1 transistor st 932
Text: IN S T R -COPTO} 8961726 TEXAS 62C 3 6 9 3 0 IN S T R OPTO TIP150, TIPI 51, TIPI 52 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 • High Voltage, High Forward and Clamped Reverse Energy • 10 A Peak Collector Current •
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TIP150,
T-33-29
O-22QAB
icm555
A 933 S transistors
M 3329 B1
transistor st 932
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Untitled
Abstract: No abstract text available
Text: DTC143ZU/DTC143ZK/DTC143ZS/DTC143ZF DTC143ZL/DTC143ZA/DTC143ZV h 7 > y ^ ^ / T ransistors D T C 1 4 3 Z U /D T C 1 4 3 Z K /D T C 1 4 3 Z S D T C 1 4 3 Z F /D T C 1 4 3 Z L /D T C 1 4 3 Z A D TC143ZV SStrtiffii' 7 >->'*$ v>MV;V4i-r h 7 > y ^ ^ X < 7 ^ / T r a n s is t o r Switch
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OCR Scan
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DTC143ZU/DTC143ZK/DTC143ZS/DTC143ZF
DTC143ZL/DTC143ZA/DTC143ZV
TC143ZV
circ00
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A 933 S transistors
Abstract: relay array driver GENESIS 6000 cherry opto npn 8 transistor array LB 122 NPN 3000F 4000M pnp 8 transistor array DC linear regulator 5A circuits
Text: CH E R R Y S E M I C O N D U C T O R CORP ITE D • 5Gb7S5L. G G 0 1 b 3 T Q ■ — ■'T-MZ-Z. I 5 AMP SMART POWER MULTICHIP ARRAY MULTICHIP ARRAY IN A 24 LEAD BATWING SO FEATURES • • • • Power, linear and logic capability in the same package 5A max power output capability
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0001b31
A 933 S transistors
relay array driver
GENESIS 6000
cherry opto
npn 8 transistor array
LB 122 NPN
3000F
4000M
pnp 8 transistor array
DC linear regulator 5A circuits
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A 933 S transistors
Abstract: VP0645N5 VP0650N2 VP06E
Text: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3
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OCR Scan
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VP0645N2
VP0650N2
VP0645N3
VP0650N3
O-220
VP0645N5
VP0650N5
VP0645ND
VP0650ND
-450V
A 933 S transistors
VP0650N2
VP06E
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A 933 S transistors
Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s
Text: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270
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OCR Scan
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O-92S)
2SA825
933LN
2SC1740
1740LN
2SC2389
2SC2808
2SC1741
2SC2872
2SC3359
A 933 S transistors
A933S
A830-S
a830s
A854S
2sc low noise
2SC1645
2SD 92 M
a1515s
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