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    A 933 S TRANSISTORS Search Results

    A 933 S TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A 933 S TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    socket AM2 pinout

    Abstract: intel pentium 4 motherboard schematic diagram PGA370 pinout motherboard agtl layout manual components celeron pga370 MOTHERBOARD CIRCUIT diagram ink cartridge electrical pinout FC-PGA370 PGA370 motherboard agtl layout manual Socket AM2 Processor Functional Data Sheet
    Text: Pentium III Processor for the PGA370 Socket at 500 MHz to 933 MHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available in 933, 866, 800EB, 733, 667, 600EB, and 533EB MHz for a 133 MHz system bus Available in 850, 800, 750, 700, 650, 600E, 550E, and 500E MHz for a 100 MHz system


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    PDF PGA370 800EB, 600EB, 533EB 133MHz PGA370 socket AM2 pinout intel pentium 4 motherboard schematic diagram PGA370 pinout motherboard agtl layout manual components celeron pga370 MOTHERBOARD CIRCUIT diagram ink cartridge electrical pinout FC-PGA370 motherboard agtl layout manual Socket AM2 Processor Functional Data Sheet

    yageo Phycomp 0805 capacitor

    Abstract: yageo mlcc yageo Phycomp 1206 capacitor fusistor yageo Phycomp NPO capacitor TIP 3055 JAPAN Yageo Ceramic multilayer NPO infrared heating gun IC1 7555 1808 FOOTPRINT
    Text: High-voltage MLCCs for power applications T1 D5 D2 R6 C3 R5 TR2 R1 18 pF 3 kV C1 2600 Vrms TR1 C2 R4 R3 R2 www.yageo.com 14 13 12 11 10 9 CN2 D1 High-voltage MLCCs for power applications Switched-mode power supplies, DC-to-DC converters and DC-to-AC inverters are nowadays widely used in


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    A 933 S transistors

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)


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    PDF 2SC2412K/ 2SC4081 /2SC4617 2SC1740S. 2SA1037AK 2SA1576A SC-59 SC-70 2SA933AS A 933 S transistors

    transistor SMD 1p6

    Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
    Text: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter


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    PDF Pf5103 BC807 BFG505X BFG520 BB131 BFG54 transistor SMD 1p6 SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec

    A 933 S transistors

    Abstract: 2SB1361 2SD2052 IS020
    Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF


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    PDF 2SD2052 2SB1361 tc-25 A 933 S transistors 2SB1361 2SD2052 IS020

    A 933 S transistors

    Abstract: br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573
    Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 D NPN Silicon Planar Transistors 2 N 2220 2 N 2221 2 N 2222 'S IE M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41 8 7 6 . The collector is electrically connected to the case. The transistors


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    PDF 623SbOS CK886 Q68000-A4573 Q62702-F134 Q62702-F135 A 933 S transistors br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573

    A 933 S transistors

    Abstract: N 2222 2N222 2221-2N TE 2221
    Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors


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    PDF CK886 A 933 S transistors N 2222 2N222 2221-2N TE 2221

    A933S

    Abstract: A 933 S A 933 S transistors A933 sc1740 2SC1740SLN 2SA933 2SC1740l
    Text: K -y > y X £ /Transistors 2SC1740LN/2SC1740SLN 2 S C 1 7 4 0 LN " w W • m4 U M 5 L N • h7>y*$ NPN y y □ > Frecl- Low Noise AmPEpitaxial Planar NPN Silicon Transistors • ÿ H f iv H ill/ D im e n s io n s Unit : mm 1) V CE(sa.)=0.04V(at 10mA) ¿ l ' 0


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    PDF 2SC1740LN/2SC1740SLN SC1740L SC1740SLN A933S A 933 S A 933 S transistors A933 sc1740 2SC1740SLN 2SA933 2SC1740l

    2SC200

    Abstract: 2SA923 Transistor AF 138 2SC2089 2SC1908 2SC1740 transistor 2SC805A 138D 2SC1740 2SC2021
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 100Hz 2SC2089 2SC2120 2SC200] 2SC200 2SA923 Transistor AF 138 2SC2089 2SC1908 2SC1740 transistor 2SC805A 138D 2SC1740 2SC2021

    2SD927

    Abstract: transistor u8 2w 138D transistor st 932
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 7c-25 CTc-25 2SD927 transistor u8 2w 138D transistor st 932

    BUZ73

    Abstract: SD2822 7a2 diode diode 935 lg LG 932
    Text: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3


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    PDF 15tfic BUZ73 SD2822 7a2 diode diode 935 lg LG 932

    2SA850

    Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
    Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 175MHz, 100Hz, iTc-25 2SA850 TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.


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    PDF BLW99

    A 933 S transistors

    Abstract: smps 450W ic F441 SGS transistors F341 f441 to3 HEATSINK SF341 aahp SGSIF341
    Text: • 7^537 005.5177 _H ■ r 3 ._ SCS-THOMSON SGSF341/IF341 I*[hK»[I(OT(2 [*S SGSF441/IF441/F541 S G S - T HO MS ON 30E D FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EMITTER FOR FAST SW ITCHING


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    PDF SGSF341/IF341 SGSF441/IF441/F541 70kHz 500ms A 933 S transistors smps 450W ic F441 SGS transistors F341 f441 to3 HEATSINK SF341 aahp SGSIF341

    BLW99

    Abstract: 5CCK MBH100
    Text: N AMER PHILIPS/DISCRETE b^E bbSa1! » DGEtîS4li T73 BLW 99 IAPX H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor Intended fo r use in class-AB and B operated hlgh-power mobile transm itting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.


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    PDF BLW99 OT-121. BLW99 5CCK MBH100

    IRF452

    Abstract: IRF450
    Text: h e o I MassMsa odgiitö □ | INTERNATIONAL Data Sheet No. PD-9.322I re c tifie r INTERNATIONAL RECTIFIER I«R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* IRF45Q IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA TO-3 Hermetic Package


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    PDF T-39-13 IRF45Q IRF451 IRF452 IRF453 O-204AA IRF450 G-181 IRF450, IRF451, IRF452 IRF450

    lt 934 transistor

    Abstract: 2SK23 K2365 A 933 S transistors
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N -Channel PACKAGE DIMENSIONS in m illim eters M O S F ield Effect T ran sistor d esig ned for high voltag e sw itchin g


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    PDF 2SK2365/2SK2366 2SK2365, 2SK2365-Z 2SK2366, 2SK2366-Z 2SK2365: 2SK2366: O-220 2SK2365/2SK2366) lt 934 transistor 2SK23 K2365 A 933 S transistors

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


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    PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    A 933 S transistors

    Abstract: S T A 933 2SD1987
    Text: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features


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    PDF 2SD1987 Pw--100ms A 933 S transistors S T A 933 2SD1987

    icm555

    Abstract: A 933 S transistors M 3329 B1 transistor st 932
    Text: IN S T R -COPTO} 8961726 TEXAS 62C 3 6 9 3 0 IN S T R OPTO TIP150, TIPI 51, TIPI 52 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 • High Voltage, High Forward and Clamped Reverse Energy • 10 A Peak Collector Current •


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    PDF TIP150, T-33-29 O-22QAB icm555 A 933 S transistors M 3329 B1 transistor st 932

    Untitled

    Abstract: No abstract text available
    Text: DTC143ZU/DTC143ZK/DTC143ZS/DTC143ZF DTC143ZL/DTC143ZA/DTC143ZV h 7 > y ^ ^ / T ransistors D T C 1 4 3 Z U /D T C 1 4 3 Z K /D T C 1 4 3 Z S D T C 1 4 3 Z F /D T C 1 4 3 Z L /D T C 1 4 3 Z A D TC143ZV SStrtiffii' 7 >->'*$ v>MV;V4i-r h 7 > y ^ ^ X < 7 ^ / T r a n s is t o r Switch


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    PDF DTC143ZU/DTC143ZK/DTC143ZS/DTC143ZF DTC143ZL/DTC143ZA/DTC143ZV TC143ZV circ00

    A 933 S transistors

    Abstract: relay array driver GENESIS 6000 cherry opto npn 8 transistor array LB 122 NPN 3000F 4000M pnp 8 transistor array DC linear regulator 5A circuits
    Text: CH E R R Y S E M I C O N D U C T O R CORP ITE D • 5Gb7S5L. G G 0 1 b 3 T Q ■ — ■'T-MZ-Z. I 5 AMP SMART POWER MULTICHIP ARRAY MULTICHIP ARRAY IN A 24 LEAD BATWING SO FEATURES • • • • Power, linear and logic capability in the same package 5A max power output capability


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    PDF 0001b31 A 933 S transistors relay array driver GENESIS 6000 cherry opto npn 8 transistor array LB 122 NPN 3000F 4000M pnp 8 transistor array DC linear regulator 5A circuits

    A 933 S transistors

    Abstract: VP0645N5 VP0650N2 VP06E
    Text: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3


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    PDF VP0645N2 VP0650N2 VP0645N3 VP0650N3 O-220 VP0645N5 VP0650N5 VP0645ND VP0650ND -450V A 933 S transistors VP0650N2 VP06E

    A 933 S transistors

    Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s
    Text: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270


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    PDF O-92S) 2SA825 933LN 2SC1740 1740LN 2SC2389 2SC2808 2SC1741 2SC2872 2SC3359 A 933 S transistors A933S A830-S a830s A854S 2sc low noise 2SC1645 2SD 92 M a1515s