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    A 708 TRANSISTOR Search Results

    A 708 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 708 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EEFK1A21AP

    Abstract: No abstract text available
    Text: User's Guide SLVU430 – January 2011 TPS5401EVM-708 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS5401 as well as support documentation for the TPS5401EVM-708 evaluation module HPA708 . Also included are the performance specifications, the


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    SLVU430 TPS5401EVM-708 TPS5401 HPA708) TPS5401EVM-708. EEFK1A21AP PDF

    schematic diagram UPS 600 Power free

    Abstract: transistor manual substitution FREE mini ups system circuit design SP705E schematic diagram mini UPS SP705 SP706 SP707 SP708 SP813L
    Text: SP705-SP708-SP813L Low Power Microprocessor Supervisory Circuits June 2010 Rev. 2.0.0 GENERAL DESCRIPTION APPLICATIONS The SP705-708/813L series is a family of microprocessor µP supervisory circuits that integrate myriad components involved in discrete solutions which monitor power-supply


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    SP705-SP708-SP813L SP705-708/813L schematic diagram UPS 600 Power free transistor manual substitution FREE mini ups system circuit design SP705E schematic diagram mini UPS SP705 SP706 SP707 SP708 SP813L PDF

    breakdown gate oxide

    Abstract: an7081 trapped plasma avalanche C1995 11027 AN-708 national
    Text: National Semiconductor Application Note 708 Greg Komoto Marshall Davis Eric Hall June 1990 INTRODUCTION In determining the reliability of a MOS process it’s important to consider two prime factors gate oxide quality and the susceptibility of MOSFETs to hot carrier degradation It’s


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    20-3A breakdown gate oxide an7081 trapped plasma avalanche C1995 11027 AN-708 national PDF

    transistor B A O 33st

    Abstract: marking CER 5-pin
    Text:   0LFURSRZHU P$ /RZ 'URSRXW &026 5HJXODWRU 0,9:708 Product Description ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ The CM3014 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. 9DULRXV UHJXODWHG RXWSXW YROWDJHV


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    CM3014 150mA MO-178) OT23-5. transistor B A O 33st marking CER 5-pin PDF

    DK-7575

    Abstract: 02ATEX
    Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.


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    UL508 CSA22 E175199, UL1604/ E198726 EN50021 DK-7575 10-way d670800e 02ATEX PDF

    ic 710

    Abstract: BD708 equivalent BD712 ic 709 bd710 eb 203 BD709 BD707 bd708 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec


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    BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 ic 710 BD708 equivalent ic 709 bd710 eb 203 BD709 BD707 bd708 COMPLEMENTARY SILICON POWER TRANSISTORS PDF

    BD707

    Abstract: BD711 BD710 BD709 BD708 BD712 ic 709 applications
    Text: BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications.


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    BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 BD707 BD710 BD709 BD708 ic 709 applications PDF

    ic 709

    Abstract: BD708 bd707 application BD707 BD712 BD709 BD711
    Text: BD707/709/711 BD708/712  COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 ic 709 bd707 application PDF

    BD707

    Abstract: No abstract text available
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 PDF

    BD707

    Abstract: BD708 BD711 BD709 BD712
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 PDF

    bd708

    Abstract: BD707
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ s ct DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec


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    BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 PDF

    b708

    Abstract: A 708 transistor
    Text: KSB707/708 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    KSB707/708 KSD568/569 O-220 PW300 Cycle10% b708 A 708 transistor PDF

    A 708 transistor

    Abstract: No abstract text available
    Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB707/708 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit VcEO 100 V VcEC V VcEO 60 80 V ebo 7 V lc 7 A lc 15 A Base Current


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    KSD568/569 KSB707/708 KSD568 KSD569 300/is, A 708 transistor PDF

    DM706A

    Abstract: tic 706a ADM705 ADM707
    Text: ► ANALOG DEVICES Low Cost |iP Supervisory Circuits ADM705ADM708 FEATURES Guaranteed RESET Valid w ith V cc 1 V 190 nA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A DM 705/A DM 707 +4.40 V (A DM 706/A DM 708) _ 200 ms Reset Pulse W idth


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    ADM705-- ADM708 705/A 706/A 707/A 705-M 705-ADM DM706A tic 706a ADM705 ADM707 PDF

    coelec

    Abstract: No abstract text available
    Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB707/708 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector-Base Voltage VcEO 100 V C ollector-E m itter Voltage : KSD 568


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    KSD568/569 KSB707/708 KSD569 coelec PDF

    M706

    Abstract: ADM705 ADM707
    Text: ANALOG DEVICES FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth _ Debounced TTL/CM O S Manual Reset Input (MR)


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    705/A 706/A 707/A 705-M ADM705â M706 ADM705 ADM707 PDF

    M705

    Abstract: ADM705 ADM707
    Text: ANALOG DEVICES Low Cost |xP Supervisory Circuits ADM705ADM708 FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth


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    705/A 706/A 707/A 705-M ADM705--ADM708 M705 ADM705 ADM707 PDF

    3055 5C pnp transistor

    Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
    Text: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4


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    2N2218 2N2219 3B2DIN41872 3055 5C pnp transistor n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 PDF

    B708

    Abstract: A 708 transistor B707 PNP EPITAXIAL SILICON TRANSISTOR 5A
    Text: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S D 5 6 8 /5 6 9 A BSOLUTE M AXIMUM RATINGS C haracteristic Sym bol Rating Unit C o lle c to r-B a s e V o lta g e V cB O


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    KSB707/708 KSD568/569 300ns, O-220 300-SOO- B708 A 708 transistor B707 PNP EPITAXIAL SILICON TRANSISTOR 5A PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    sa 708

    Abstract: BD707
    Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for


    OCR Scan
    BD707/709/711 BD708/712 BD707, BD709 BD711 O-220 BD707 BD708 BD712 sa 708 PDF

    b0711

    Abstract: B0707 B0709 BD710 BD712 le 708 BD709 BD707
    Text: fZ 7 SCS-THOMSON ^ 7 # raoeiis&ieim *® BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon


    OCR Scan
    BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 O-220 b0711 B0707 B0709 BD710 le 708 BD709 BD707 PDF

    BD709

    Abstract: SC06960 BD707 BD708 BD712 BD710 BD711
    Text: / I T S C S -n iO M S O N Ä T # [MO gfô l[L[iera®*S BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION


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    BD707/709/711 BD708/710/712 BD707, BD709, BD711 O-220 BD708, BD710, BD712 SC06960 BD709 BD707 BD708 BD710 PDF

    d705

    Abstract: BD706 TRANSISTORE BD705 BD707 BD708 BD709 BD710 BD711 BD712
    Text: • 7 ^ 2 3 7 0Q5ÛH25 SGS-THOMSON ^D^@g[Lg g¥il(ô ia i S G 3 _ BD705/706/707/708 BD709/710/711 /712 S-THOMSON 3ÜE D POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistore in Jedec TO220 plastic package intended for use in power linear


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    7c12tà D705/706/707/708 BD709/710/7117712 BD705, BD707, BD709 BD711 O-220 BD706, BD708, d705 BD706 TRANSISTORE BD705 BD707 BD708 BD710 BD712 PDF