2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

81CNQ035A

Contextual Info: Bulletin PD-20040 rev. A 09/01 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54

81CNQ035A

Abstract: 81CNQ 81CNQ040A 81CNQ045A IRFP460
Contextual Info: Bulletin PD-20040 rev. A 09/01 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54

IRFP460

Abstract: MARKING CODE S02 81CNQ 81CNQ035A 81CNQ040A 81CNQ045A FL40
Contextual Info: Bulletin PD-20040 rev. A 09/01 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54

2SK2160

Contextual Info: Ordering number: EN4600A 2SK2160 NO.4600A N -Channel MOS Silicon FET SAMYO i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitating m ounting. A b so lu te M axim um R a tin g s a tT a = 25°C

Contextual Info: >kiyjxi>ki 19-1394; R ev 0 ; 10/98 1.250., Dual SPST, CMOS A n a l o g S w i t c h e s _ F e a t u r e s The M A X 4580/M A X 4590/M AX 4600 dual analog sw itches feature low on-resistance of 1 . 250. max. O n-resistance is

81CNQ

Abstract: 81CNQ035A 81CNQ040A 81CNQ045A IRFP460
Contextual Info: Bulletin PD-20237 11/00 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54 V waveform

81CNQ035A

Abstract: 81CNQ 81CNQ040A 81CNQ045A IRFP460
Contextual Info: Bulletin PD-20040 01/01 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54 V waveform

Contextual Info: 4600 and 4400 series Toggle switches Distinctive features and specifications UG1006-A ❑ High current/voltage rating in a small case ❑ Butt action contacts ❑ Insulated or metal lever A ❑ UL, CSA and VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS

ELM14600AA

Contextual Info: E L E I H 1 4600A A com plem entary Enhancement Mode Power MOS FET • GENERAL DESCRIPTION The ELM14600AA uses advanced trench technology to provide excellent RmoM and low gate charge.The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

2712 soic

Contextual Info: GENNUM G B 46 00 Monolithic Unity Gain Video Buffer c o r p o r a t i o n DATA SHEET FEATURES DESCRIPTION • wideband, unity gain, stable operation ±0.1 dB at 100 MHz when CL = 27 pF (full power BW = 120 MHz when CL = 47 pF). The G B 4600 is a h ig h p e rfo rm a n ce , m o n o lith ic unity g a in

Contextual Info: 14-Serie 4400-4600-A_15-Serie 4400-4600-A 21/11/12 14:05 Page88 4600 and 4400 series Toggle switches Distinctive features and specifications ❑ High current/voltage rating in a small case ❑ Butt action contacts ❑ Insulated or metal lever A ❑ UL, CSA and VDE EN 61058-1 approved

2E14

Abstract: 4h sic
Contextual Info: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield

rca 3069

Abstract: Avansys Power rca power transistor 3069 astec custom power RCA 432 CISPR22 AV60A-048L-033D025 AV60A-048L-033D Common Mode Choke 1mH, 12A k 3531 transistor
Contextual Info: AV 6 0 A D u a l O u t p u t H a l f - b r i c k Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V and 3.3V/2.5V Dual Output 75W DC-DC Converter REV 01 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355

Contextual Info: GENNUM C O R P O R A T I G B 4600 Monolithic Unity Gain Video Buffer OU PRODUCT PROPOSAL FEATURES DESCRIPTION • wideband, unity gain, stable operation full power BW = 100 MHz w hen C L = 100 pF The G B 4600 is a high p e rfo rm a n ce , m o n o lith ic unity gain

trs 3.5 mm audio jack

Abstract: 4600L elo touchscreen AC C14 60320 durability
Contextual Info: 4600L 46" Interactive Digital Signage Touch Display The 4600L Interactive Digital Signage IDS display combines a precision Elo touch screen with a professionalgrade, large format LCD panel. The 4600L offers System Integrators, Value-Added Resellers and Software Developers

Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s

Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s

TVS VISHAY

Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s

Contextual Info: SIEMENS a-ß-Y-Strahlungsdetektorchip a-ß-y-Radiation Detector Chip SFH 873/F273 Chipaufsicht/Chip top Querschnitt/Cross section Technologie • Silizium planar p auf n-Substrat • Substrat: 4600 ± 1400 Qcm • Metallisierung: Vorderseite: Kontakt A11,4 |xm

Contextual Info: SIEM EN S a-ß-y-Strahlungsdetektorchip a-ß-y-Radiation Detector Chip SFH 872/F272 Chipaufsicht/Chip top Querschnitt/Cross section Technologie Technology • Silizium planar p auf n-Substrat • Substrat: 4600 ± 1400 ßcm • Metallisierung: Vorderseite: Kontakt

Contextual Info: SIEMENS a-ß-y-Strahlungsdetektor a-ß-y-Radiation Detector SFH 522 Eigenschaften Substratscheibe: Chipdicke: Vorderseite: 4600 ± 1400 Qcm 381 ± 15 [im Aluminiumkontakt 1,4 im Aluminiumabdeckung ganzflächig 0,1 um 0,4 |im Gold/Arsen Rückseite: • Kleiner Dunkelstrom

Contextual Info: SIEM EN S a-ß-7-Strahlungsdetektor a-ß-y Radiation Detector SFH 523 Eigenschaften Substratscheibe: Chipdicke: Vorderseite: 4600 +1400 flcm 381 ± 15 im Aluminiumkontakt 1,4 um Aluminiumabdeckung ganzflächig 0,1 um 0,4 jim Gold/Arsen Rückseite: • Kleiner Dunkelstrom

IN3091

Abstract: IN3740 stud type diodes IN3738 IN3085-92 IN3741 IN3742 A177P A177A A197PB
Contextual Info: R I C H A R D S O N / N A T I O N A L EL t.2E D • 7 7 3 4 ^ 1 7 G G 0 0 7 G C] Iñl ■ NAT SILICON DIODES IN 3735-44 IN 4044-56 250 103 250 130 275 120 300 120 3000 5000 4500 5000 5750 46000 37500 100000 84000 100000 138000 1.3 500 1.2 470 1.7 1000 1.3