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    A 43 SMD TRANSISTOR Search Results

    A 43 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 43 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Cermet Trimmers

    Abstract: TS63 TSM43 SMD Transistors 3f p843t
    Text: V is hay Sfe r nice 63 T7 T73 T 12 P8 43 T 18 64 T93 T63 TS5 TS53 TS6 TS63 TSM4 TSM43 w w w. v i s h a y. c o m TS3 S e l ect o r G ui d e single-turn, multi-turn and SMD CERMET TRIMMERS r esistive p r o d ucts V I S HAY I N T E R T E C H N OLO G Y , I N C .


    Original     		PDF TSM43 VMN-SG2088-0609 Cermet Trimmers TS63 TSM43 SMD Transistors 3f p843t

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08

    UF4004 SMD

    Abstract: 1N4004 SMD S380 SMD smd sk24 1N4937 SMD UF4005 smd SK1100 MPSA42 SMD UF4002 SMD B500C2300-1500
    Text: Diotec Products for Set Top Boxes Version 2006-02-07 Diotec Products for Set Top Boxes Power Supply, Control and Protection Power Supply Standard and Schottky Rectifiers, Bridge Rectifiers Signal Processing / Control Zener Diodes, Small Signal Diodes and Transistors


    Original     		PDF TGL41-. LL4148. LL4151, BAW56, BAV70, BAV99, BAV100. BAV103 LL101, LL103, UF4004 SMD 1N4004 SMD S380 SMD smd sk24 1N4937 SMD UF4005 smd SK1100 MPSA42 SMD UF4002 SMD B500C2300-1500

    pin configuration transistor BC547 smd packaging

    Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
    Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors


    Original     		PDF DO-35 DO-41 C-120 0406-3K pin configuration transistor BC547 smd packaging BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe

    transistor 2N3906 smd 2A SOT23

    Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
    Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts


    Original     		PDF DO-35 DO-41 DO-15 DO-201AD DO-41P 200mW OD-80C LL-34 transistor 2N3906 smd 2A SOT23 BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23

    smd marking 58a

    Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
    Text: Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m VGS = 10V RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF KO3404 OT-23 smd marking 58a smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346

    SMD MARKING CODE TRANSISTOR 501

    Abstract: TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857


    Original     		PDF M3D088 BC856; BC857 BC846 BC847. BC857 BC856 BC856A BC856B SMD MARKING CODE TRANSISTOR 501 TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43

    smd 2N3906

    Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
    Text: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )


    Original     		PDF 2N3906-G 2N3904-G OT-23 MMBT3906-G. 200uA QW-BTR05 smd 2N3906 2N3904 TRANSISTOR SMD 2N3906 SMD

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS

    DIODE D29 -08

    Abstract: 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L08 IPI80N06S3L-08 DIODE D29 -08 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2


    Original     		PDF 2SK3731 O-263

    IPB80P04P4-07

    Abstract: PG-TO262-3-1 S 6085 J 4P0407
    Text: IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.4 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-07 S 6085 J 4P0407

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1

    4P04L06

    Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
    Text: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-06 4P04L06 smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag

    SMD Transistors nc

    Abstract: 2SK3731 V782
    Text: Transistors IC SMD Type N-channel enhancement mode MOSFET 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1


    Original     		PDF 2SK3731 O-263 SMD Transistors nc 2SK3731 V782

    KI2323DS

    Abstract: No abstract text available
    Text: Transistors IC SMD Type P-Channel 20-V D-S MOSFET KI2323DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF KI2323DS OT-23 KI2323DS

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    smd 58a transistor 6-pin

    Abstract: KO3400 AO3400 smd transistor 26 TRANSISTOR SMD 1A ao3400 transistor
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3400 AO3400 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 0.4 3 (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 52m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = 2.5V) +0.05 0.1-0.01 0-0.1


    Original     		PDF KO3400 AO3400) OT-23 smd 58a transistor 6-pin AO3400 smd transistor 26 TRANSISTOR SMD 1A ao3400 transistor