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    A 1930 Search Results

    A 1930 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    REF1930AIDDCR Texas Instruments Dual Output Vref and Vref/2 Voltage Reference 5-SOT-23-THIN -40 to 125 Visit Texas Instruments Buy
    TLV7111930DSER Texas Instruments Dual, 200mA, Low-IQ, Low-Dropout Regulator for Portable Devices 6-WSON -40 to 125 Visit Texas Instruments Buy
    TLV7111930DSET Texas Instruments Dual, 200mA, Low-IQ, Low-Dropout Regulator for Portable Devices 6-WSON -40 to 125 Visit Texas Instruments Buy
    REF1930AIDDCT Texas Instruments Dual Output Vref and Vref/2 Voltage Reference 5-SOT-23-THIN -40 to 125 Visit Texas Instruments Buy
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    A 1930 Price and Stock

    Allegro MicroSystems LLC A19302PUBATN-FAE

    2-WIRE ABS DIRECTION AND SPEED S
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    DigiKey A19302PUBATN-FAE Bulk 11,990 1
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    Allegro MicroSystems LLC A19302PUBATN-RAE

    2-WIRE ABS DIRECTION AND SPEED S
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    DigiKey A19302PUBATN-RAE Bulk 11,986 1
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    Allegro MicroSystems LLC A19301LUBATN-FWPE

    2-WIRE ABS DIRECTION AND SPEED S
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    DigiKey A19301LUBATN-FWPE Bulk 11,985 1
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    Allegro MicroSystems LLC A19303LUBATN-FPHE

    ABS DIRECTION/SPEED SENSOR IC
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    DigiKey A19303LUBATN-FPHE Cut Tape 3,954 1
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    A19303LUBATN-FPHE Digi-Reel 3,954 1
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    Mouser Electronics A19303LUBATN-FPHE 3,947
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    Amphenol Sine Systems 2CMA193097R1000

    2P+E WALL MOUNTED SOCKET OUTLET.
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    DigiKey 2CMA193097R1000 Box 20 1
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    Interstate Connecting Components 2CMA193097R1000
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    A 1930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1920A05

    Abstract: No abstract text available
    Text: 1920A05 5 Watts, 26 Volts, Class A Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


    Original     		PDF 1920A05 1920A05

    MRF6S19060N

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 AD250

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HSR3

    T491C105K0

    Abstract: MA675
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 MRF6S19100H T491C105K0 MA675

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 MRF6S19100H

    T491X106K035AT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 T491X106K035AT A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3 Nippon capacitors Nippon chemi

    T491C105K0

    Abstract: mcr63v470m8x11 MRF6S19120H
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 T491C105K0 mcr63v470m8x11

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100HR3 MRF6S19100HSR3

    MRF6S19120H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3

    Untitled

    Abstract: No abstract text available
    Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H 37ficers, MRF6S19100HR3 MRF6S19100HSR3

    MRF6S19060N

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HSR3

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3

    1920A12

    Abstract: No abstract text available
    Text: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


    Original     		PDF 1920A12 1920A12

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Text: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		PDF XD010-24S-D2F XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 GSM repeater circuit Rogers 4350 datasheet AN060

    Mifare commands

    Abstract: MIFARE Card IC Coil Design Guide MF1ICS70 CL RC632 application note AN MIFARE Card Coil Design Guide CONTACTLESS SMART CARD READER RC632 e purse nxp proximity antenna design RC632 CL RC632 UID
    Text: MF1S7009 Mainstream contactless smart card IC for fast and easy solution development Rev. 3 — 26 July 2010 193031 Product data sheet PUBLIC 1. General description NXP Semiconductors has developed the MIFARE MF1S7009 to be used in a contactless smart card according to ISO/IEC 14443 Type A. The MF1S7009 features a double size


    Original     		PDF MF1S7009 MF1S7009 Mifare commands MIFARE Card IC Coil Design Guide MF1ICS70 CL RC632 application note AN MIFARE Card Coil Design Guide CONTACTLESS SMART CARD READER RC632 e purse nxp proximity antenna design RC632 CL RC632 UID

    TDK CORE

    Abstract: No abstract text available
    Text: Core T e c h n o l o g i e s / M a te ria ls T e ch n o lo g y P ro ce ss T e c h n o lo g y E v a lu a tio n & S im u la tio n T e c h n o lo g y Mafer/a/s rec/?no/off/ tms* TDK 1930 ip , e u t * # * » , ' - . /i * m±smk M e *a s a x f f i i > s M » A 5c * n s s


    OCR Scan     		PDF 18logy TDK CORE

    Untitled

    Abstract: No abstract text available
    Text: 13 12 10 M A T E R IA L S A N D FIN IS H E S B ODY, C A P B R A S S PLATED GOLD 7 m CENTER C O NTACT BR ASS PLATED GOLD IN S U L A T O R T E F L O N REF CAP .120 .0 8 6 SEMI RIGID C A B L E AS-89678-3200 CABLE ASS Y INSTRUT. ES-73599-OOOO-015 INTERFACE PS-89675-1930


    OCR Scan     		PDF AS-89678-3200 ES-73599-OOOO-015 PS-89675-1930 SR086 SD-73415-216

    dioda rectifier

    Abstract: westcode stud base diode SI 2 dioda pcr075
    Text: ItL H H I^ A L W ESTCODE SEMICONDUCTORS P U B L IC A T IO N D P75 IS S U E t M e rih , 1930 Stud-Base Silicon Rectifier Diodes Type PCN/PCR075 75amperes average: up to 1600 volts R A T IN G S M a x im u m v a lu e s a t 1 7 5 ° C T j u n lo s s s ta te d o t h e r w is e


    OCR Scan     		PDF PCN/PCR075 75amperes 13f5DC 137BA 175sC 175nC dioda rectifier westcode stud base diode SI 2 dioda pcr075

    Untitled

    Abstract: No abstract text available
    Text: Led Signalleuchten Einbaudurchm esser 14 mm Led Indicators Body diameter 14 mm Bestell-Nr. Farbe Part No. Colour V 1930*130 Rot Red Für 130 V A C und 230 V A C For 130 V A C and 230 V A C Vtyp. <mA) (V) (mcd) 110 135 47,0 1930*131 Grün Green 110 135 34,0


    OCR Scan     		PDF

    SAA 1251

    Abstract: M193AB1 SAA1251 m193cb1 m193 M193C M193DB1 M193A 1251 saa TDA4431
    Text: MOS INTEGRATED CIRCUITS M 19 3 A M 1J3C M 1930 EPM 1 6 - E L E C TR O N IC PR O G R A M M E M O R Y 16 S TA T IO N S • • • ONE CHIP SO LU TIO N IN C LU D IN G C O N TR O L A N D NON V O L A T . M EM O RY FOR 16 PROGR. 1 0 Y E A R S M E M O R Y R ETEN TIO N


    OCR Scan     		PDF M193D 16-ELECTRONIC SAA 1251 M193AB1 SAA1251 m193cb1 m193 M193C M193DB1 M193A 1251 saa TDA4431

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: AVW smd transistor HP 2602 optocoupler marking WMG marking code H2E SMD optocoupler NAND SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE B7 HCPL-1930 HCPL-1931
    Text: M gI H EW LETT mUttm P A C K A R D Dual Channel Line Receiver Hermetic Optocoupler Technical Data HCPL-1930 HCPL-1931 HCPL-193K 5962-89572 F eatu res A pplications D escrip tion • Dual Marked w ith Device Part Number and DSCC Standard Microcircuit Drawing


    OCR Scan     		PDF HCPL-1930 HCPL-1931 HCPL-193K MIL-PRF-38534 QML-38534, 16-pin HCPLS04 74LSOOQUAD HCPL-2602 TRANSISTOR SMD MARKING CODE 1d AVW smd transistor HP 2602 optocoupler marking WMG marking code H2E SMD optocoupler NAND SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE B7

    Untitled

    Abstract: No abstract text available
    Text: am IRC USA Sales Offices ALABAMA-RO Whitesell & Assoc., Inc. 3601 S M em orial Pkwy, Ste B Huntsville, AL 35801-5321 Phone: 205-883-5110 Fax: 205-862-9626_ _ ARIZONA_ SW Sales 1930 S A lm a School Rd Suite C -205 M esa, A Z 85210 Phone: 602-345-8080


    OCR Scan     		PDF 3698C

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Voltage Controlled Oscillator PCS 1930 - 1990 MHz ML081100-01960 V3.00 Features LSM1 Package • M in ia tm e Size • • • • 4.0 Surface M o u n tP a ck a g e Electrically Shielded Low Phase N oise H ighly L inear Tuning


    OCR Scan     		PDF ML081100-01960