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    Y5117400 Search Results

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    Y5117400 Price and Stock

    hyn HY5117400BT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5117400BT60 54
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    Y5117400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM536410CM

    Abstract: No abstract text available
    Text: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    OCR Scan     		PDF HYM536410C 4Mx36 4Mx36-bit Y5117400C HY514100A HYM536410CM HYM536410CMG 72-Pin

    HYM536410

    Abstract: HYM536410MG HYM53
    Text: • H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 4 1 0 S e r ie s 4M x 36-bit c m o s d r a m m o d u l e PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of eight H Y5117400 in 24/28 pin SO J and four HY514100A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2fyF decoupling


    OCR Scan     		PDF 36-bit HYM536410 Y5117400 HY514100A HYM53641OM/LM HYM53641OMG/LMG 1CE06-00-M 1CE06-00-MAY93 HYM536410MG HYM53

    Untitled

    Abstract: No abstract text available
    Text: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		PDF 256Kx4-bit, 1MX16BIT 16MX1

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: Y5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The Y5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260