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    Vishay Intertechnologies VP2410L

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    VP2410L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VP2410L Vishay Siliconix P-Channel 240-V (D-S) MOSFET Original PDF
    VP2410L Vishay Telefunken P-Channel Enhancement-Mode MOSFET Transistor Original PDF
    VP2410L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP2410L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VP2410L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0427

    Abstract: 2410L VP2410L MMA6
    Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O-226AA 2410L O-226AA) S-04279--Rev. 16-Jun-01 0427 2410L VP2410L MMA6

    2410L

    Abstract: VP2410L
    Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O-226AA 2410L 18-Jul-08 2410L VP2410L

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original
    PDF VP2410L O-226AA O-226AA) P-38283--Rev. 15-Aug-94 VP2410L

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original
    PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original
    PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    5262

    Abstract: VP2410L
    Text: VP2410L Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L -240 10 @ VGS = -4.5 V -0.8 to -2.5 -0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O226AA O226AA) P-38283--Rev. 5262 VP2410L

    Untitled

    Abstract: No abstract text available
    Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    PDF VP2410L O-226AA 2410L 08-Apr-05

    One-chip telephone IC

    Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
    Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the


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    PDF 29C93A 102/V V25bis) PQFP44 29C93A 29C921 80C51 One-chip telephone IC telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


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    PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


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    PDF O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    VP2410

    Abstract: VP2410L marking LD VISHAY
    Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching


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    PDF VP2410L O-226AA 2410L S-04279-- 16-Jun-01 O-226AA) VP2410 VP2410L marking LD VISHAY

    B0815

    Abstract: vp2410
    Text: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits


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    PDF VP2410L O-226AA P-38283--Rev. O-226AA) B0815 vp2410

    Untitled

    Abstract: No abstract text available
    Text: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven


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    PDF VP2410L O-226AA P-38283--Rev. O-226AA)

    VP2410

    Abstract: No abstract text available
    Text: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3


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    PDF VPDV24 O-226AA) BS208 TP2410L, TP2010L VP2410L VPDV24 VP2410

    VP2410

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS "W >D (A) -240 10 -0.18 Performance Curves: VPDV24 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 ,l— I—-i 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    PDF VP2410L O-226AA) VPDV24 lim10 VP2410

    11105 IC

    Abstract: No abstract text available
    Text: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •


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    PDF VP2410L -226A S-52426-- 14-Apr-97 O-226AA) 11105 IC

    p-channel mosfet bss92

    Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5


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    PDF VP2020L, BSS92 VP2020L O-226AA 2410L S-04279-- 16-Jun-01 p-channel mosfet bss92 vishay siliconix code marking to-92 bss92 70210 VP2410

    VP2410

    Abstract: No abstract text available
    Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L


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    PDF VP0808B/L/M VP1008B/L/M VQ2004J \/PDV10 VQ2006J VPDV10 TP2010L TP2410L VP2410L VPDV10 VP2410

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


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    PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    N-Channel JFET FETs

    Abstract: T072
    Text: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60


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    PDF T0220 T0237 T0226AA VP0300L BS250 VP0610L P06I0L VP0808L VP1008L TP1220L N-Channel JFET FETs T072