0427
Abstract: 2410L VP2410L MMA6
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
O-226AA)
S-04279--Rev.
16-Jun-01
0427
2410L
VP2410L
MMA6
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2410L
Abstract: VP2410L
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
18-Jul-08
2410L
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
P-38283--Rev.
15-Aug-94
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
S-52426--Rev.
14-Apr-97
VP2410L
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VP2410L
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
O-226AA)
S-52426--Rev.
14-Apr-97
VP2410L
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5262
Abstract: VP2410L
Text: VP2410L Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L -240 10 @ VGS = -4.5 V -0.8 to -2.5 -0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O226AA
O226AA)
P-38283--Rev.
5262
VP2410L
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Untitled
Abstract: No abstract text available
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VP2410L
O-226AA
2410L
08-Apr-05
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VP2410
Abstract: No abstract text available
Text: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3
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VPDV24
O-226AA)
BS208
TP2410L,
TP2010L
VP2410L
VPDV24
VP2410
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Untitled
Abstract: No abstract text available
Text: TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors SB;SSä PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER V BOTTOM VIEW *D (A) TP2010L -200 10 -0.18 TP2410L -240 10 -0.18 ,1 2 3 . 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDV24 1^3 I 1—
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TP2010L,
TP2410L
O-226AA)
TP2010L
VPDV24
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VP2410
Abstract: No abstract text available
Text: VP2410L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS "W >D (A) -240 10 -0.18 Performance Curves: VPDV24 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 ,l— I—-i 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VP2410L
O-226AA)
VPDV24
lim10
VP2410
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Untitled
Abstract: No abstract text available
Text: IflE SILICONIX INC D Ô55473S 0 0 1 4 0 3 ^ 4 • BS208 fT S iB c a n ix JLW in c o rp o ra te d T -2-7-Z5 P-Channel Enhancem ent-M ode MOS Transistor PRODUCT SUMMARY TO-92 V BR DSS (V) fDS(ON) ( Í1 ) Id (A) PACKAGE -2 0 0 14 - 0 .2 TO-92 RM BOTTOM VIEW 1 DRAIN
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55473S
BS208
VPDV24
BS208
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VP2410
Abstract: No abstract text available
Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L
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VP0808B/L/M
VP1008B/L/M
VQ2004J
\/PDV10
VQ2006J
VPDV10
TP2010L
TP2410L
VP2410L
VPDV10
VP2410
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A254735
Abstract: TP2010L TP201 TP241 TP2410L
Text: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10
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A254735
QQ1727Ã
TP201
TP241
TP2010L
TP2410L
VPDV24
O-226AA)
TP2410L
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VP2410
Abstract: VP2410L marking LD VISHAY
Text: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching
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VP2410L
O-226AA
2410L
S-04279--
16-Jun-01
O-226AA)
VP2410
VP2410L
marking LD VISHAY
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Untitled
Abstract: No abstract text available
Text: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven
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VP2410L
O-226AA
P-38283--Rev.
O-226AA)
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11105 IC
Abstract: No abstract text available
Text: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •
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VP2410L
-226A
S-52426--
14-Apr-97
O-226AA)
11105 IC
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