Untitled
Abstract: No abstract text available
Text: VIS VG3617801BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801BT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
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VG3617801BT
576-word
100MHz
1G5-0120
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4MX72 BIT SDRAM
Abstract: VS47217801BTGE VS2721
Text: VS27217801BTGE,VS47217801BTGE 2M,4MX72-Bit SDRAM Module VIS Description The VS27217801BTGE and VS47217801BTGE are 2M x 72 - bit and 4M x 72 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 9/18 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS27217801BTGE and
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VS27217801BTGE
VS47217801BTGE
4MX72-Bit
VG3617801BT)
VS27217801BTGE,
VS47217801BTGE
4MX72 BIT SDRAM
VS2721
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Untitled
Abstract: No abstract text available
Text: VS26417801B,VS46417801B 2M,4MX64-Bit SDRAM Module VIS Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and
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VS26417801B
VS46417801B
4MX64-Bit
VG3617801BT)
VS26417801B,
VS46417801B
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U12-U15
Abstract: No abstract text available
Text: VS26417801BTGE/VS46417801BTGE 2M,4MX64-Bit SDRAM Module VIS Description The VS26417801BTGE and VS46417801BTGE are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801BTGE and
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VS26417801BTGE/VS46417801BTGE
4MX64-Bit
VS26417801BTGE
VS46417801BTGE
VG3617801BT)
VS26417801BTGE,
VS46417801BTGE
100MHz
U12-U15
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Untitled
Abstract: No abstract text available
Text: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
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VG3617801CT
VG3617801CT
576-word
100MHz
1G5-0133
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dba1
Abstract: VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG3617801CT
Text: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
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VG3617801CT
VG3617801CT
576-word
100MHz
1G5-0133
dba1
VG3617801BT-10
VG3617801BT-8H
VG3617801BT-8L
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intel 80 82
Abstract: DQ-460 7801G DQM02 dg550
Text: VS26417801B.VS46417801B 2M,4Mx64-Bit SDRAM Module Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and
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VS26417801B
VS46417801B
4Mx64-Bit
VG3617801BT)
VS26417801B,
VS46417801B
intel 80 82
DQ-460
7801G
DQM02
dg550
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VG264265
Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
Text: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ
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VG264260CJ
VG26V4265CJ
VG264265CJ
256Kxl6
17400CJ
17405CJ
VG26V
17400DJ
17405DJ
VG264265
VG46VS8325AQ
VM43217405CJSA
VP4-64
VS46417801BTGC
VG46VS8325BO
VG264
VM83217400CJSA
vs46417801bt
VG46VS8325
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