MSM51V18165BSL
Abstract: S0j42-P-400-127 msm51v18165b
Text: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The V18165B/BSL achieves high integration, high-speed operation, and
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E2G0087-17-41
MSM51V18165B/BSL_
576-Word
16-Bit
TheMSM51
V18165B/BSL
MSM51V18165B/BSL
MSM51V18165BSL
S0j42-P-400-127
msm51v18165b
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Untitled
Abstract: No abstract text available
Text: E2G0133-17-61 O K I Semiconductor M S M 5 1 V 1 8 1 6 5 D / D This version: Mar. 1998 S L 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
576-Word
16-Bit
MSM51V18165D/DSL
TheMSM51
V18165D/DSL
42-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V18165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V18165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V18165A is
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V18165
576-Word
16-Bit
MSM51V18165A
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V18165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V18165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V18165A is
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MSM51
V18165
576-Word
16-Bit
MSM51V18165A
42-pin
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MSM51V18165DSL
Abstract: No abstract text available
Text: E2G0133-17-61 O K I Semiconductor MSM5 1VI8 1 65 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESC R IPTIO N The V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
MSM51VI8165P/PSL
576-Word
16-Bit
MSM51V18165D/DSL
TheMSM51
V18165D/DSL
MSM51V18165DSL
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The M SM V18165B/BSL achieves high integration, high-speed operation, and
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65B/BSL_
576-Word
16-Bit
TheMSM51
V18165B/BSL
51V18165B/BSL
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1VI8165 B/BSL_ E 2G 0 087 -17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The V18165B/BSLis a 1,048,576-word x 16-bit dynamicRAM fabricated inOki'ssilicon-gate CMOS technology. The MSM51 V18165B/BSLachieves high integration, high-speed operation, and
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1VI8165
576-Word
16-Bit
MSM51V18165B/BSLis
MSM51
V18165B/BSLachieves
MSM51V18165B/BSL
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM V18165 B-50/-60/-50L/-60 L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V18165B features a “hyper page” mode of operation whereby
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MB81V18165
B-50/-60/-50L/-60
MB81V18165B
16-bit
MB81V18165B-50/-60/-50L/-60L
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TC51V18165
Abstract: TC51V18165CFT
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The V18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.
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TC51V18165
TC51V18165CJ/CFT
TC51V18165CJ/CFT--31
TC51V18165CJ/CFT--
TC51V18165CFT
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 16 B IT HYPER PAGE MOD E D Y CRA V18165B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V18165B features a “hyper page” mode of operation whereby
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MB81V18165B-50/-60/-50L/-60L
MB81V18165B
16-bit
D-63303
F9712
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81v18165
Abstract: V18165A-70 a60l
Text: PRELIMINARY - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V 1 8 1 65A-60/70/60L/70L CMOS 1M X 16BIT HYPER PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page M ode Dynamic RAM The Fujitsu M V18165A is a fully decoded CMOS Dynamic RAM DRAM that contains
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5A-60/70/60L/70L
16BIT
B81V18165A
16-bit
81v18165
V18165A-70
a60l
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M5M4V18165
Abstract: No abstract text available
Text: MITSUBISHI LSlS c. .wuNPvRV M5 M4 V1 8 1 6 5 C T P -5 ,-6 ,-7 , -5 S ,-6 S ,-7 S HYPER PAGE M O DE 16777216-B IT 1048576-W Q R D B Y 16-B IT DYNAM IC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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16777216-B
048576-W
1048576-word
16-bit
M5M4V18165CTP-5
16777216-BIT
16-BIT)
M5M4V18165
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM V18165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V18165B features a “hyper page” mode of operation whereby
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MB81V18165B-50/-60
MB81V18165B
16-bit
50-pin
FPT-50P-M06)
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs V18165BTP-6,-7,-6S,-7S HYPER PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family ot 1048576-w ord by 16-bit dynamic RAM S, fabricated with the high performance C M OS process, and is ideal for large-capacity memory systems where high speed, low power
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M5M4V18165BTP-6
16777216-BIT
1048576-WORD
16-BIT)
1048576-w
16-bit
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