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    UPG110B Search Results

    UPG110B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPG110B NEC Gallium arsenide integrated circuit Original PDF
    uPG110B NEC 2 to 8 GHz WIDE BAND AMPLIFIER Original PDF
    UPG110B NEC 2 to 8 GHz WIDE BAND AMPLIFIER CHIP Scan PDF

    UPG110B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPG110B

    Abstract: PT 4863 103P UPG100P UPG110 UPG110P 101P
    Text: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz 15 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY


    Original     		PDF UPG110B UPG110P UPG110B UPG110 24-Hour PT 4863 103P UPG100P UPG110P 101P

    PT 4863

    Abstract: diode gp 421 101P 103P UPG100P UPG110 UPG110B UPG110P
    Text: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY


    Original     		PDF UPG110B UPG110P UPG110B UPG110 24-Hour PT 4863 diode gp 421 101P 103P UPG100P UPG110P

    marking 34

    Abstract: G110 UPG110B
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. FA 4.5 MAX LEAD 1 & 3 0.6 ± 0.06 3 2 4.6 MAX 4 MARKING 4.1 MIN +0.2 0.7 -0.1 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 PART NUMBER


    Original     		PDF UPG110B 24-Hour marking 34 G110 UPG110B

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: SEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS • W ID E -B A N D : 2 to 8 G H z SYMBOLS PAR AM ETERS Ta = 25 ° g U N IT S R A T IN G S • H IG H G A IN : 15 dB T Y P at f = 2 to 8 G H z V dd Drain Voltage V + 10 • M E D IU M P O W E R : + 14 d B m T Y P @ f = 2 to 8 G H z


    OCR Scan     		PDF UPG110B UPG110P

    Untitled

    Abstract: No abstract text available
    Text: £ lásfl NEC LOW C U R R E N T 2-8 GHz W ID E-B A N D A M P LIF IER UPG110B-L UPG110P-L FEATURES PRELIM IN A R Y A BSO LU TE M A X IM U M RiATINGS Ta = 25°C • LOW CU R R E N T : 60 m A TYP SYM BO LS P A R A M ET ER S UNITS RATINGS V dd V in P in Pt Tc


    OCR Scan     		PDF UPG110B-L UPG110P-L 34-6393/FAX NOTICE-2276

    101P

    Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
    Text: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l


    OCR Scan     		PDF UPG110B UPG110P 101P 103P UPG100P UPG110P ausi die attach

    Untitled

    Abstract: No abstract text available
    Text: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz


    OCR Scan     		PDF UPG110B-L UPG110P-L UPG110B UPG100P, UPG102P

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic


    OCR Scan     		PDF UPG100B UPG101B UPG103B UPG503B UPG506B UPG501P UPG502P UPG503P UPG506P

    TC 4863 DB

    Abstract: No abstract text available
    Text: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ GAIN vs. FREQUENCY AND TEMPERATURE • W IDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IM PEDANCE MATCHED TO 50 Q


    OCR Scan     		PDF UPG110B UPG102P 34-6393/FAX TC 4863 DB

    Untitled

    Abstract: No abstract text available
    Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6


    OCR Scan     		PDF UPG100B UPG101B UPG103B UPG110B UPG100P UPG101P flB08 UPG503B UPG506B

    Untitled

    Abstract: No abstract text available
    Text: 2-8 GHz WIDE-BAND AMPLIFIER UPG110P GAIN vs. FREQUENCY AND TEMPERATURE FEATURES WIDE-BAND: 2 to 8 GHz HIGH GAIN: 15 dB at f = 2 to 8 GHz MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O œ HERMETICALLY SEALED PACKAGE ASSURES HIGH


    OCR Scan     		PDF UPG110P UPG110B UPG110 UPG110P UPG100P, UPG102P b427S25 DGbb03T

    Untitled

    Abstract: No abstract text available
    Text: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ UPGIIOP GAIN vs. FREQUENCY AND TEMPERATURE • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f - 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f - 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O


    OCR Scan     		PDF UPG110B UPG110 UPG110P 1000tun UPG100P, UPG102P

    L3010

    Abstract: UPG110B
    Text: 2-8 GHz WIDE-BAND AMPLIFIER ~ p ~ ^ jj“ POWER GAIN vs. FREQUENCY FEATURES_ • WIDE-BAND: 2 to 8 GHz VDO - 8 ' / IDD • 6 0 tiA • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER : +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Si


    OCR Scan     		PDF UPG110B UPG11 UPG110P UPG100P, UPG102P L3010