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    UPD43 Price and Stock

    Rochester Electronics LLC UPD43256BGU-70Y-E2

    STANDARD SRAM, 32KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD43256BGU-70Y-E2 Bulk 1,244,615 355
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    • 1000 $0.85
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    Rochester Electronics LLC UPD43256BGU-70LL-E1-A

    STANDARD SRAM, 32KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD43256BGU-70LL-E1-A Bulk 117,772 37
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    • 100 $8.32
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    • 10000 $8.32
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    Rochester Electronics LLC UPD431000AGZ-70LL-KJH-E3-A

    SRAM 5V 1M-BIT (128K X 8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70LL-KJH-E3-A Bulk 104,251 260
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    Rochester Electronics LLC UPD431000AGW-80Y

    MEMORY / SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGW-80Y Bulk 39,652 355
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    Rochester Electronics LLC UPD431000AGZ-70X-KJH-A

    STANDARD SRAM, 128KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD431000AGZ-70X-KJH-A Bulk 35,281 260
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    Find more UPD43 price and stock on Findchips.com

    UPD43 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPD431000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    UPD431000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-70L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000-85L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000A NEC 1M-BIT CMOS STATIC RAM 128K-Word BY 8-BIT Original PDF
    uPD431000A NEC Semiconductor Selection Guide Original PDF
    uPD431000A NEC 1M-BIT CMOS STATIC RAM 128K-Word BY 8-BIT Original PDF
    uPD431000A NEC Semiconductor Selection Guide 1995 Original PDF
    UPD431000A NEC -0.5 to +7.0V V(in/out): -05 to +0.5V 1W 131.072 x 8-bit static CMOS RAM Scan PDF
    uPD431000A-B15 NEC Semiconductor Selection Guide 1995 Original PDF
    UPD431000ACZ NEC 1M-BIT CMOS STATIC RAM 128K-Word BY 8-BIT Original PDF
    UPD431000ACZ-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000ACZ-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000ACZ-10LL Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD431000ACZ-5 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    ...

    UPD43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    Untitled

    Abstract: No abstract text available
    Text: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS


    Original     		PDF UPD43256BGX-B12-EJA 32kx8) A0-14 I/O1-18 262144BIT

    STATIC RAM 6264

    Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
    Text: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:


    OCR Scan     		PDF 28PIN uP04368CR/LA-20 UP04464G-12 UPD4464G-12L UPD4464G-15 uPD4464G-15L STATIC RAM 6264 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L

    TA1024

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. //PD 43501 1,024-C H A N N E L TIM E DIVISION SW ITCH Description Features The/uPD43501 is a tim e-sw itch device designed fo r use in a high-perform ance digital com m unications net­ work. Features include a tim e-switch function by


    OCR Scan     		PDF uPD43501 16-bit 10-bit PD43501 64-word TA1024

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 36-BIT uPD431536L 768-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 3 1 5 3 2 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 31532L 32K-WORD 32-BIT uPD431532L 768-word 32-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 36-BIT uPD431636L 768-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF MPD432232L 64K-WORD 32-BIT uPD432232L 536-word 32-bit

    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF UPD434004A PD434004A 32-pin PD434004ALE-17 PD434004ALE-20 008iC PD434004A PD434004A. jUPD434004ALE 0829A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434004AL PD434004AL 32-pin PD434004ALLE-A17 PD434004ALLE-

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431532L 768-word 32-bit S100GF-65-8ET PD431532L. PD431532LGF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 64K-WORD 32-BIT uPD432232L 536-word 32-bit S100GF-65-8ET PD432232L PD432232L.

    431000A

    Abstract: UPD431000ACZ-70LL UPD431000ACZ-70L upd431000a UPD431000ACZ70LL
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4 3 1 0 0 0 A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The ,uPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words x 8 bits CMOS static RAM. The ^PD 431000A has two chip enable pins (CE1, CE2) to extend the capacity.


    OCR Scan     		PDF 128K-WORD uPD431000A 31000A 32-pin C10535E) uPD431000AGW 431000A UPD431000ACZ-70LL UPD431000ACZ-70L UPD431000ACZ70LL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MPD4 3 1 2 3 1 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431231L 768-word 32-bit uPD431231LGF uPD431231 S100GF-65-8ET

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The ,uPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF 256K-W 16-BIT uPD434016A 44-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434001 AL 4M -BIT CMOS FAST SRAM 4M -W ORD BY 1-BIT Description The ,uPD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434001 32-pin PD434001ALLE-A17

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iP D 4 3 8 2 16 1,4382181,4382321,4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The ,uPD4382161 is a 524,288-word by 16-bit, the ,uPD4382181 is a 524,288-word by 18-bit, the ,uPD4382321 is a


    OCR Scan     		PDF uPD4382161 288-word 16-bit, uPD4382181 18-bit, uPD4382321 144-word 32-bit uPD4382361

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,uPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF 256K-WORD 16-BIT uPD434016A PD434016A 44-pin M12228EJ5V0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431632L 768-word 32-bit S100GF-65-8ET PD431632L. PD431632LGF

    oa203

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434001 AL 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The ,uPD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434001 32-pin PD434001ALLE-A17 S32G5-50-7JD2 PD434001 PD434001AL. oa203

    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434004AL PD434004AL 32-pin PD434004ALLE-A17 PD434004ALLE-A20 008iC PD434004AL PD434004AL. UPD434004ALLE 0829A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 36-BIT uPD431636L 768-word 36-bit S100GF-65-8ET

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434008AL 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The ^¡PD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434008AL 512K-W PD434008AL 36-pin PD434008ALLE-A17 PD434008ALLE-A20

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT UPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description T he ,uPD 432937 is a 65 ,5 3 6 -w o rd by 3 6 -b it synch ron ous static RAM fa b rica te d w ith advan ced C M O S te ch n o lo g y


    OCR Scan     		PDF UPD432937 64K-WORD 36-BIT S100GF-65-8ET M14018EJ1V0DS00 uPD432937 PD432937G 100-pin