UN1119
Abstract: UN221N UNR1119 UNR221N XP04286
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1
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XP04286
UNR221N
UN221N)
UNR1119
UN1119)
UN1119
UN221N
XP04286
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UN1119
Abstract: UNR1119 XP01119 XP1119
Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1119(UN1119) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01119
XP1119)
UNR1119
UN1119)
UN1119
XP01119
XP1119
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UN1119
Abstract: UNR1119 XN01119 XN1119
Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1119(UN1119) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01119
XN1119)
UNR1119
UN1119)
UN1119
XN01119
XN1119
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UN1119
Abstract: XP1119
Text: Composite Transistors XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1119 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP1119
UN1119
UN1119
XP1119
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UN801
Abstract: No abstract text available
Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm For camera UN1119+2SD1119 ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1 ■ Absolute Maximum Ratings Parameter P N P
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UN801
UN1119
2SD1119
100mA*
200MHz
UN801
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UN1119
Abstract: UN1213 XP04387
Text: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
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XP04387
UN1213
UN1119
UN1119
XP04387
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UN1119
Abstract: XN1119
Text: Composite Transistors XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1119 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1119
UN1119
UN1119
XN1119
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2SD1119
Abstract: UN1119 UN801
Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm M Di ain sc te on na tin nc ue e/ d For camera UN1119+2SD1119 ● 2 5 3 4 0.6±0.1 • Absolute Maximum Ratings Parameter Unit Collector to base voltage
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UN801
UN1119
2SD1119
2SD1119
UN801
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UN1119
Abstract: UN1213 XP04387
Text: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
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XP04387
UN1213
UN1119
UN1119
XP04387
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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UN1119
Abstract: UNR1119 XP01119 XP1119
Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP01119
XP1119)
UNR1119
UN1119)
UN1119
XP01119
XP1119
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1119
Abstract: UNR1119 XN01119 XN1119
Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element
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XN01119
XN1119)
UNR1119
UN1119)
UN1119
XN01119
XN1119
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un604
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name 2SA1674 UN601 DC-DC converter UN602 UN604
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UN601
2SA1674
2SA1674
M261L
M262L
UN604
UN1119
UN801
un604
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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d20 diode
Abstract: PA-120
Text: Transistors Selection Guide by Applications and Functions Composite Transistors # 6 Pin Mini Power Type (D20): Diode +Transistors, Transistors, Resistor Built-in Transistors DC-DC converter UN602 UN603 UN604 Camera UN801 Vceo (V) (A) typ. (V) 2SA1674 Diode
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UN601
2SA1674
MA720
M253L
B3B07
M261L
M262L
UN1119
2SD1119
d20 diode
PA-120
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UN603
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Composite Transistors • 6 Pin Mini Power Type (D17): Diode + Transistors + Resistor Built-in Transistors Application Functions Type No. Transistor Chip Name 2SA1674 UN601 (V) lc (A) - 80 - 1
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2SA1674
UN601
UN602
MA720
M253L
B3B07
UN603
UN604
UN1119
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Untitled
Abstract: No abstract text available
Text: Panasonic Composite Transistors XP04387 Silicon NPN epitaxial planer transistor T ri Silicon PNP epitaxial planer transistor (Tr2) U nit: mm For sw itching/digital circuits • • • ■ • Features Two elements incorporated into one package. (Transistors with built-in resistor)
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XP04387
UN1213
UN1119
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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UN1000
600mW
UN2000
200mW)
N2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN7000
UN8000
UN9110
UNR921CJ
UN1219
un4115
un1211
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UN603
Abstract: UN602 2SA1674 UN601 MA720 UN604 "TRANSISTORS SELECTION GUIDE" MAX80A
Text: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name VcEO lc (V) (A) -80 -1 2SA1674 UN601 DC-DC
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2SA1674
UN601
MA720
M253L
UN602
B3B07
UN603
UN604
M261L
"TRANSISTORS SELECTION GUIDE"
MAX80A
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UN1219
Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Text: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10
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UN921E
UN921F
UN921K
UN921L
UN1110
UN1111
UN1213
10K/47K
UNI114
UN1214
UN1219
12Z2
UN1113
UN1115
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