UFN642
Abstract: No abstract text available
Text: UNITRODE CORP 1=55 9347963 Df^Jci347,U 3 92D UN I T R O D E CORP 10738 POWER MOSFET TRANSISTORS UFN640 UFN641 UFN642 UFN643 200 Volt, 0.2 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • low Drive Current • Ease of Paralleling • No Second Breakdown
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UFN640
UFN641
UFN642
UFN643
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lts 542
Abstract: UFN540 FN640
Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
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UFN540
UFN541
UFN542
UFN543
lts 542
UFN540
FN640
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UFN841
Abstract: UFN842 ufn840 PED 32 UFN843
Text: UFN840 UFN841 UFN842 UFN843 POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • • • • • • DESCRIPTION The Unitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.
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UFN840
UFN841
UFN842
UFN843
UFN841
UFN842
PED 32
UFN843
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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ufn640
Abstract: UFN642 LT 0220 diode
Text: POWER MOSFET TRANSISTORS UFN640 UFN642 UFN643 200 Volt, 0.2 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability Part Number UFN640 DESCRIPTION
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UFN640
UFN642
UFN643
UFN640
UFN641
UFN642
LT 0220 diode
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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U2TA506
U2TA508
U2TA510
861-6S40
UFN540
UFN833
UPT613
UFNF130
UFN451
U2T105
U2T305
TQ-66
ufn432
UFN450
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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