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    Contextual Info: STTA12006T2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8


    Original     		STTA12006T2 Current150 Voltage600 Time80n Current200u Current12m StyleSOT-227A urrent12m PDF

    Contextual Info: SDR1006 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100


    Original     		SDR1006 Current100 Voltage600 Time80n Voltage850m Current50u StyleStI-5/16 PDF

    Contextual Info: STTA12006TV1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8


    Original     		STTA12006TV1 Current150 Voltage600 Time80n Current200u Current12m StyleSOT-227B rrent12m PDF

    Contextual Info: CGD1451 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.34 @I(FM) (A) (Test Condition)1.0m


    Original     		CGD1451 Voltage60 Time80n PDF

    Contextual Info: BYV255-200 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255-200 Voltage200 Time80n Current10m PDF

    Contextual Info: BYV255V150 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255V150 Voltage150 Time80n Current10m PDF

    Contextual Info: STTA12006TV2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.8


    Original     		STTA12006TV2 Current150 Voltage600 Time80n Current200u Current12m StyleSOT-227B rrent12m PDF

    Contextual Info: SDR1010 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m


    Original     		SDR1010 Current100 Time80n Voltage850m Current50u StyleStI-5/16 PDF

    Contextual Info: SDR1004 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100


    Original     		SDR1004 Current100 Voltage400 Time80n Voltage850m Current50u StyleStI-5/16 PDF

    Contextual Info: SDR1008 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)100


    Original     		SDR1008 Current100 Voltage800 Time80n Voltage850m Current50u StyleStI-5/16 PDF

    Contextual Info: BYV255V100 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255V100 Voltage100 Time80n Current10m PDF

    Contextual Info: BYV255-150 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255-150 Voltage150 Time80n Current10m PDF

    Contextual Info: G820 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.70 @I(FM) (A) (Test Condition)50m


    Original     		Current50m Voltage60 Time80n PDF

    BYV255V200

    Contextual Info: BYV255V200 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255V200 Voltage200 Time80n Current10m PDF

    Contextual Info: UFT12760 Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current60 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time80n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)60


    Original     		UFT12760 Current60 Voltage600 Time80n Current30u PDF

    Contextual Info: BYV255V50 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current1.5k V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time80n @I(F) (A) (Test Condition)1.0


    Original     		BYV255V50 Voltage50 Time80n Current10m PDF

    Contextual Info: 2N3751 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3751 Freq50M time80n PDF

    Contextual Info: 2N3749 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3749 Freq40M time80n PDF

    Contextual Info: 2N2880+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2880 Freq50M time80n PDF

    Contextual Info: 2N3749+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3749 Freq40M time80n PDF

    Contextual Info: ^EDI ED I7F33512C ELECTRONIC CCSGN& NC.I 512Kx32 Flash 512Kx32 Flash Module Features 2,4,8 megabyte C M O S Flash Module Family The E D I Flash Family Is a five-volt—only In system Flash program­ mable and eraseable read only memory module. The m odules are


    OCR Scan     		I7F33512C 512Kx32 512Kx32 2x512Kx32 80-150ns 4x512Kx32 Time-80ns PDF

    332 Ic 8 pin

    Abstract: 4X512K ic 331
    Contextual Info: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer


    OCR Scan     		512Kx32 2x512Kx32 4x512Kx32 Time-80ns I7F33S 2x512Kx32 4x512Kx32 EDI7F33512CRev 332 Ic 8 pin 4X512K ic 331 PDF

    Contextual Info: 2N2658 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2658 Freq20M time80n PDF

    EDI7F233512C80BNC

    Abstract: EDI7F33512C EDI7F33512C100BNC EDI7F33512C120BNC EDI7F33512C150BNC EDI7F33512C80BNC
    Contextual Info: ^EDI ED I7F33512C ELECTRONIC CCSGN& NC.I 512Kx32 Flash 512Kx32 Flash Module Features 2,4,8 megabyte C M O S Flash Module Family The E D I Flash Family Is a five-volt—only In system Flash program­ mable and eraseable read only memory module. The m odules are


    OCR Scan     		EDI7F33512C 512KX32 2x512Kx32 4x512Kx32 Time-80ns 80-15iiniininfniiwiii 2x512Kx32 4x512Kx32 EDI7F233512C80BNC EDI7F33512C EDI7F33512C100BNC EDI7F33512C120BNC EDI7F33512C150BNC EDI7F33512C80BNC PDF