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Abstract: No abstract text available
Text: HFA30PB120 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k t(rr) Max.(s) Rev.Rec. Time180n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage3.9 @I(FM) (A) (Test Condition)60
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HFA30PB120
Current30
Time180n
Current40u
StyleTO-247AC
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Abstract: No abstract text available
Text: IRGMC50U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16
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IRGMC50U
delay24nÃ
time27nÃ
time180nÃ
ime27nÃ
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Untitled
Abstract: No abstract text available
Text: IRGMC50UD Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16
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IRGMC50UD
delay24nÃ
time27nÃ
time180nÃ
me27nÃ
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