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    Untitled

    Abstract: No abstract text available
    Text: 1N3768R+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3768R Current35 Time10u

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    Abstract: No abstract text available
    Text: 1N3768R+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3768R Current35 Time10u

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    Abstract: No abstract text available
    Text: 1N3766R+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3766R Current35 Voltage800 Time10u

    Untitled

    Abstract: No abstract text available
    Text: 1N3768R+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3768R Current35 Time10u

    Untitled

    Abstract: No abstract text available
    Text: 1N3766R+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3766R Current35 Voltage800 Time10u

    Untitled

    Abstract: No abstract text available
    Text: 1N3766R+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35


    Original     		PDF 1N3766R Current35 Voltage800 Time10u

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    Abstract: No abstract text available
    Text: 1S2757 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition)20m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.5


    Original     		PDF 1S2757 Voltage600 Time10u Current10u Current500u StyleDO-15

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    Abstract: No abstract text available
    Text: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-1802 Freq250k time10u

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    Abstract: No abstract text available
    Text: ST110 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)7.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF ST110 time10u StyleTO-36

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    Abstract: No abstract text available
    Text: MHT1909 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)60 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MHT1909 Freq340k time10u

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    Abstract: No abstract text available
    Text: A580-1605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-1605 Freq250k time10u

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    Abstract: No abstract text available
    Text: SDT1909 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)60 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF SDT1909 Freq340k time10u

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    Abstract: No abstract text available
    Text: 2SD1174 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)1.5kâ V(BR)CBO (V)1.5k I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)95 Maximum Operating Temp (øC) I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SD1174 time10u

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    Abstract: No abstract text available
    Text: A580-2205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2205 Freq250k time10u

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    Abstract: No abstract text available
    Text: A580-2403 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)180m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2403 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: A580-1602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-1602 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: A580-2203 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2203 Freq250k time10u

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    Abstract: No abstract text available
    Text: 2N2527 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)110# I(CBO) Max. (A)150u @V(CBO) (V) (Test Condition)2.0 V(CE)sat Max. (V).80 @I(C) (A) (Test Condition)10


    Original     		PDF 2N2527 time10u

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    Abstract: No abstract text available
    Text: 1.5KC22A Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage22 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage19 I(PPM) Max.(A)Pk.Pulse Current49


    Original     		PDF 5KC22A Voltage22 Voltage19 Current49 Voltage30 Time10u

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    Abstract: No abstract text available
    Text: AUY28 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)90 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)1.5m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF AUY28 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: A580-1805 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-1805 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: A580-2005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)150m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2005 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: A580-2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)180m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2405 Freq250k time10u

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    Abstract: No abstract text available
    Text: SDT1962 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)65 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC) I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF SDT1962 Freq340k time10u