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    Catalog Datasheet MFG & Type Document Tags PDF

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    Abstract: No abstract text available
    Text: GC2533-25 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.900f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT


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    GC2533-25 Voltage30 PDF

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    Abstract: No abstract text available
    Text: V360CH8 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage360 V(RMS) Max. Applied Voltage230 V(DC) Max. Applied Voltage300 I(TM) Max.(A) Peak Current500 V(C) Nom. (V) Clamping Voltage595 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy20


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    V360CH8 Voltage360 Voltage230 Voltage300 Current500 Voltage595 Energy20 PDF

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    Abstract: No abstract text available
    Text: SMBYT03-300 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time55n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)3.0


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    SMBYT03-300 Voltage300 Time55n Current20u Current500u StyleSOD-15 PDF

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    Abstract: No abstract text available
    Text: 1N1345 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.66 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10 @Temp. (øC) (Test Condition)25õ


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    1N1345 Voltage300 Current10m StyleStR-10 PDF

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    Abstract: No abstract text available
    Text: B125C5000/3300-400 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)5.0


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    B125C5000/3300-400 Voltage300 Current20u PDF

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    Abstract: No abstract text available
    Text: SSCDA357 Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time70n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)9.0


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    SSCDA357 Current12 Voltage300 Time70n Current100u PDF

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    Abstract: No abstract text available
    Text: J-BYT03-30 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)3.0


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    J-BYT03-30 Voltage300 Time25n Current10u PDF

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    Abstract: No abstract text available
    Text: MA45340-54 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.33pì C1/C2 Min. Capacitance Ratio4.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.750 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleAxial


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    MA45340-54 Voltage30 PDF

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    Abstract: No abstract text available
    Text: 1N1345A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.64í @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150Ï


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    1N1345A Voltage300 PDF

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    Abstract: No abstract text available
    Text: SKBB125C5000/3300 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)5.0


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    SKBB125C5000/3300 Voltage300 Current10u Current500u PDF

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    Abstract: No abstract text available
    Text: HA1919BCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.5.6p‘ C1/C2 Min. Capacitance Ratio3.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.800 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip


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    HA1919BCHIP Voltage30 PDF

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    Abstract: No abstract text available
    Text: V180ZS10 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage180 V(RMS) Max. Applied Voltage115 V(DC) Max. Applied Voltage153 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage300 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy35


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    V180ZS10 Voltage180 Voltage115 Voltage153 Voltage300 Energy35 PDF

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    Abstract: No abstract text available
    Text: GC1501 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio3.4 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C


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    GC1501 Voltage30 PDF

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    Abstract: No abstract text available
    Text: FST7130SM4A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current35 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800¥ V(FM) Max.(V) Forward Voltage500mÆ @I(FM) (A) (Test Condition)30


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    FST7130SM4A Current35 Voltage30 Voltage500mà Current500m PDF

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    Abstract: No abstract text available
    Text: HM1-0104-2 Diodes Fuse-Programmable Diode Matrix Circuits Per Package4 Diodes Per Circuit10 I F Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.5


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    HM1-0104-2 Circuit10 Current100m Voltage30 Time50n PDF

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    Abstract: No abstract text available
    Text: SLD24U Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current125m @Temp (øC) (Test Condition)100’ V(RRM)(V) Rep.Pk.Rev. Voltage24k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage30Æ @I(FM) (A) (Test Condition)125m @Temp. (øC) (Test Condition)25’


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    SLD24U Current125m Voltage24k Voltage30Ã Current10u StyleAxial-178 PDF

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    Abstract: No abstract text available
    Text: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E


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    MA46600-186 Voltage30 PDF

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    Abstract: No abstract text available
    Text: GC1505H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2pì C1/C2 Min. Capacitance Ratio3.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew


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    GC1505H Voltage30 PDF

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    Abstract: No abstract text available
    Text: FST7130SM3D Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current35 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800¥ V(FM) Max.(V) Forward Voltage500m @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)25õ


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    FST7130SM3D Current35 Voltage30 Voltage500m Current500m PDF

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    Abstract: No abstract text available
    Text: MA46604G30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-C


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    MA46604G30 Voltage30 PDF

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    Abstract: No abstract text available
    Text: HM9-0186-2 Diodes Fuse-Programmable Diode Matrix Circuits Per Package6 Diodes Per Circuit8 I F Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.5


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    HM9-0186-2 Current100m Voltage30 Time50n PDF

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    Abstract: No abstract text available
    Text: HA1926C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio3.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.700 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7


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    HA1926C Voltage30 PDF

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    Abstract: No abstract text available
    Text: 2322592.3006 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage47 V(RMS) Max. Applied Voltage30 V(DC) Max. Applied Voltage38 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage96 @I(PP) (A) (Test Condition)1.0 W(TM) Max.(J) Transient Energy1.1


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    Voltage47 Voltage30 Voltage38 Current100 Voltage96 Time20n PDF

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    Abstract: No abstract text available
    Text: MA46609-276 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2p C1/C2 Min. Capacitance Ratio4.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.4.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleSOD-70


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    MA46609-276 Voltage30 StyleSOD-70 PDF