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    KM68B1001 Search Results

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    IC 74142

    Abstract: No abstract text available
    Text: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high­ speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or


    OCR Scan     		PDF KM68B1001 576-bit 400mil 32-pin KM68B1001P/J-12 180mA KM68B1001P/J-15 160mA KM68B1001 IC 74142

    68B10

    Abstract: No abstract text available
    Text: SAMSUNG K M 6 8 B 1001 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high­ • Fast Access Tim e 12,15 ns max. • Low Power Dissipation Standby (TTL) : 60m A(m ax.) (CMOS): 20m A(m ax.) Operating KM 68B1001P/J-12 : 180mA (max.)


    OCR Scan     		PDF KM68B1001 576-bit 68B1001P/J-12 180mA 68B1001P/J-15 160mA 68B10 32-Pin 68B1001J

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10