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    TTS3816B4E Search Results

    TTS3816B4E Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TTS3816B4E TwinMOS Technologies 2m x 16-Bit x 4 Banks Synchronous Dram Original PDF
    TTS3816B4E-6 TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-6A TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-6B TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-6C TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-6D TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-6E TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF
    TTS3816B4E-7 TwinMOS Technologies 2M x 16-Bit x 4 Banks synchronous DRAM Original PDF

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    twinmos

    Abstract: x875mil TTS3816B4E TTS3816B4E-6 2MX16 TTS3816B4E-6A TTS3816B4E-6B TTS3816B4E-6C TTS3816B4E-6D TTS3816B4E-6E
    Text: M.tec TTS3816B4E 2M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of


    Original     		PDF TTS3816B4E 16Bit TTS3816B4E twinmos x875mil TTS3816B4E-6 2MX16 TTS3816B4E-6A TTS3816B4E-6B TTS3816B4E-6C TTS3816B4E-6D TTS3816B4E-6E