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    TTK101MFV Price and Stock

    Toshiba America Electronic Components TTK101MFV-A,L37F(B

    Trans JFET N-CH -1V 3-Pin SOT-723 - Tape and Reel (Alt: TTK101MFV-A,L37F(B)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TTK101MFV-A,L37F(B Reel 12 Weeks 8,000
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    TTK101MFV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 Rating Unit VGDO -20 V IG 10 mA PD Note 1 150 mW Tj 125 °C Tstg −55 to 125 °C Gate-drain voltage Gate current Drain power dissipation Junction temperature


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    TTK101MFV PDF

    TTK101MFV

    Abstract: TTK101
    Text: TTK101MFV 東芝ジャンクション FET シリコンNチャネル接合形 TTK101MFV エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 ・ 入力容量が小さい: Ciss = 1.8 pF typ. @VDS = 2 V, VGS = 0, f = 1MHz


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    TTK101MFV A100mV 250uA TTK101MFV TTK101 PDF

    TTK101MFV

    Abstract: ttk101
    Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 VGDO -20 V IG 10 mA PD Note 1 150 mW Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Note:


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    TTK101MFV TTK101MFV ttk101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg


    Original
    TTK101MFV PDF

    TTK101MFV

    Abstract: No abstract text available
    Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg


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    TTK101MFV TTK101MFV PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF