TSAL6200 Search Results
TSAL6200 Price and Stock
Vishay Intertechnologies TSAL6200Infrared Emitter, High Power, 940 nm, 17 ?, T-1 3/4 (5mm), 15 mW/Sr, 15 ns, 15 ns - Bulk (Alt: TSAL6200) |
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TSAL6200 | Bulk | 4,200 | 12 Weeks | 4,000 |
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TSAL6200 | 29,237 |
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TSAL6200 | 18,036 | 108 |
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TSAL6200 | 18,038 | 12 Weeks | 1 |
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TSAL6200 | Bulk | 986 | 1 |
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TSAL6200 | 110 |
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TSAL6200 | 2,431 |
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TSAL6200 | Bulk | 68,000 | 1,000 |
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TSAL6200 | 1,830 | 1 |
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TSAL6200 | 12,359 |
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TSAL6200 | 14 Weeks | 4,000 |
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TSAL6200 | 13 Weeks | 4,000 |
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Vishay Intertechnologies TSAL6200-ESZInfrared Emitters IR EMITTER HIGH POWR 950NM 5MM 17DEG-e3 |
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TSAL6200-ESZ |
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Vishay Intertechnologies TSAL6200-ASZInfrared Emitters IR EMITTER HIGH POWR 950NM 5MM 17DEG |
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TSAL6200-ASZ |
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TSAL6200-ASZ | 13 Weeks | 1,000 |
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TSAL6200-ASZ | 545 |
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Vishay Intertechnologies TSAL6200-ES21Infrared Emitter 940nm 72mW/sr Circular Top Mount 2-Pin T-1 3/4 T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200-ES21 | 1,000 | 1,000 |
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TSAL6200-ES21 | 1,000 | 12 Weeks | 1,000 |
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TSAL6200-ES21 | Bulk | 5,000 |
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TSAL6200-ES21 | 1,829 | 2 |
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TSAL6200-ES21 | 13 Weeks | 1,000 |
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Vishay Intertechnologies TSAL6200.Ir Emitter High Powr 950Nm 5Mm 17Deg-E3 Rohs Compliant: No |Vishay TSAL6200. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200. | Bulk | 4,200 | 4,000 |
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TSAL6200 Datasheets (3)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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TSAL6200 |
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LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) | Original | |||
TSAL6200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package | Original | |||
TSAL6200 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package | Original |
TSAL6200 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11 | |
Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
diode chn 940
Abstract: chn 940 CT-98
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OCR Scan |
TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98 | |
Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 D-74025 24-Jun-03 | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 D-74025 11-May-04 | |
21211Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 21211 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSAL6200
Abstract: infrared emitters and detectors data book temic
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Original |
TSAL6200 TSAL6200 D-74025 04-Nov-97 infrared emitters and detectors data book temic | |
Contextual Info: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 08-Apr-05 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 D-74025 01-Oct-04 | |
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TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL6200 TSAL6200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 08-Apr-05 | |
TSAL6200
Abstract: temic infrared
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OCR Scan |
TSAL6200 TSAL6200 D-74025 06-Mar-98 temic infrared | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 D-74025 11-May-04 | |
Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL6200 TSAL6200 D-74025 23-Jun-04 | |
TSAL6200
Abstract: J-STD-051
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Original |
TSAL6200 2002/95/EC 2002/96/EC TSAL6200 18-Jul-08 J-STD-051 | |
TSOP75538
Abstract: 72hours 82495
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Original |
TSOP753. TSOP755. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP75538 72hours 82495 | |
TSOP343
Abstract: TSOP34338 TSOP32138
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Original |
TSOP321. TSOP323. TSOP325. TSOP341. TSOP343. TSOP345. TSOP343 TSOP34338 TSOP32138 |