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Vishay Semiconductors TS8514VA EMITTER IR 850NM 100MA SMD
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DigiKey	TS8514VA	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors TS8514VA-SF-F VS TS8514VA-SF-F, GaAiAs IR Emitting Diode 14 mil chip, 850 nm
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ES Components	TS8514VA-SF-F					1 - 10 - 100 - 1000 - 10000 -	Get Quote

TS8514VA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
TS8514VA		Vishay Semiconductor Opto Division	Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 850NM 100MA SMD		Original	PDF

TS8514VA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm	Original	PDF	TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TS8514VA Abstract: No abstract text available Text: TS8514VA Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength:  = 850 nm	Original	PDF	TS8514VA 2002/95/EC 2002/96/EC TS8514VA 11-Mar-11
Untitled Abstract: No abstract text available Text: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm	Original	PDF	TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm	Original	PDF	TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TS8514VA Abstract: No abstract text available Text: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm	Original	PDF	TS8514VA 2011/65/EU 2002/96/EC TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare	Original	PDF	VMN-SG2200-1502