TN2101
Abstract: TN2101K1 TN2101ND
Text: – – E T E TN2101 OBSOL Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Die N1U❋ 15V 7.0Ω 1.0V TN2101K1 TN2101ND
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TN2101
OT-23:
O-236AB*
TN2101K1
TN2101ND
OT-23.
TN2101
TN2101K1
TN2101ND
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Untitled
Abstract: No abstract text available
Text: TN2101K1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V)15 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)170m @Temp (øC)150# IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)360m# Minimum Operating Temp (øC)-55
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TN2101K1
Junc-Case200
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marking 8A sot-23
Abstract: TN2101 TN2101K1 TN2101ND
Text: TN2101 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Die N1U❋ 15V 7.0Ω 1.0V TN2101K1 TN2101ND where ❋ = 2-week alpha date code
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Original
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TN2101
OT-23:
O-236AB*
TN2101K1
TN2101ND
OT-23.
marking 8A sot-23
TN2101
TN2101K1
TN2101ND
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marking 8A sot-23
Abstract: TN2101 TN2101K1 TN2101ND sot-23 MARKING CODE GS 5
Text: TN2101 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Die N1U❋ 15V 7.0Ω 1.0V TN2101K1 TN2101ND where ❋ = 2-week alpha date code
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Original
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TN2101
OT-23:
O-236AB*
TN2101K1
TN2101ND
OT-23.
marking 8A sot-23
TN2101
TN2101K1
TN2101ND
sot-23 MARKING CODE GS 5
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HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
Text: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P
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2N6659
2N7007
AN0332CG
AP0332CG
BSS123
DN2535N2
DN2540N2
DN2620N3
DN2624N3
DN2625K6-G
HV50530PG
hv9910p-g
TN0604N3
HV5808PJ
VN2460N8-G
HV-801
HV801
VP0120N5
VN0360N5
TN0520N3
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Untitled
Abstract: No abstract text available
Text: TN2101 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^ G S (th ) b v dgs (max) (max) TO-236AB* Die 15V 7.0Q. 1.0V TN2101K1 TN2101ND Product marking for SOT-23: N 1U*
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OCR Scan
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TN2101
O-236AB*
TN2101K1
TN2101ND
OT-23:
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marking code SS SOT23
Abstract: No abstract text available
Text: TN2101 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ B V R dgs 15V d S ON Order Number / Package V GS(th) Product marking for SOT-23: (max) (max) TO-236AB* Die N1U* 7.on 1.0V TN2101K1 TN2101ND where * = 2-week alpha dale code
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OCR Scan
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TN2101
O-236AB*
TN2101K1
TN2101ND
OT-23:
marking code SS SOT23
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F 5 Ld SOT-23
Abstract: DSS SOT23 sot-23 MARKING CODE SP
Text: TN2101 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package Product marking for SOT-23: b v dss/ ^DS O N ^ G S (lh ) BVpcis (max) (max) SOT-23 N1U* 15V 7.0Q 1.0V TN2101K1 where * = 2-week alpha date code
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OCR Scan
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TN2101
OT-23
TN2101K1
OT-23:
300ns
F 5 Ld SOT-23
DSS SOT23
sot-23 MARKING CODE SP
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Untitled
Abstract: No abstract text available
Text: TN2101 _ Low ThreshoM N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) BVdgs (max) (max) TO-236AB* Die 15V 7.0Q 1.0V TN2101K1 T N 21 01 N D P rod uct m arking fo r SOT-23:
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OCR Scan
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TN2101
O-236AB*
TN2101K1
OT-23:
OT-23.
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VP1304N2
Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND
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OCR Scan
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2N7002
BSS123
DN2535N2
DN2535N3
DN2535N5
DN2535ND
DN2540N2
DN2540N3
DN2540N5
DN2540N8
VP1304N2
TP2540ND
VN1304N3
VP3203N3
LND150N8
VN3205N5
VN1310N3
TN2510N8
TN0102N2
VP1306N2
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pj 89 diode
Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct
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OCR Scan
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OT-23
TN2101K1
TN2106K1
TN2124K1
TP2106K1
VN2110K1
VP2110K1
-10ack
HV9111
HV9112
pj 89 diode
HV7708PG
HV7808
pj 44 diode
HV5808
VQ10003
VN 300
tp2106
220v ac to 9v dc converter
pj 56 diode
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