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    TIP640 Search Results

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    TIP640 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TIP640 3
    • 1 -
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    Quest Components TIP640 11
    • 1 $12.24
    • 10 $9.18
    • 100 $9.18
    • 1000 $9.18
    • 10000 $9.18
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    GTCAP TIP640

    10 A, 60 V, NPN, SI, POWER TRANSISTOR, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TIP640 8
    • 1 $14.175
    • 10 $12.6
    • 100 $12.6
    • 1000 $12.6
    • 10000 $12.6
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    SGS Thomson TIP640

    10 A, 60 V, NPN, SI, POWER TRANSISTOR, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TIP640 3
    • 1 $14.175
    • 10 $13.23
    • 100 $13.23
    • 1000 $13.23
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    TIP640 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP640 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    TIP640 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TIP640 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TIP640 Unknown Transistor Replacements Scan PDF
    TIP640 Unknown Transistor Replacements Scan PDF
    TIP640 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TIP640 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TIP640 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TIP640 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF
    TIP640 Semiconductor Technology NPN & PNP Silicon Darlington Transistors Scan PDF
    TIP640 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    TIP640 Texas Instruments 60 V, 10 A, 175 W, NPN darlington-connected silicon power transistor Scan PDF

    TIP640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator PDF

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 PDF

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


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    BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59 PDF

    TLP641

    Abstract: TIP641 TIP642 pn junction diode texas instruments LCM 1601 TIP640 T1P640 TIP645 TIP646 TIP647
    Text: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


    OCR Scan
    TIP640, TIP641. TIP64Z TIP645, TIP646, TIP647 100-mJ TLP641 TIP641 TIP642 pn junction diode texas instruments LCM 1601 TIP640 T1P640 TIP645 TIP646 PDF

    lt 5234

    Abstract: Tip640 IP645 DEJJ
    Text: TEXAS INSTR - COPTO} 8961726 TE XAS ^ 2 De | fl=ìfc:175t, 0D3bT7D INSTR COPTO D 62C 3 6 97 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP645, TIP646, TIP647


    OCR Scan
    TIP640, TIP641, TIP642 IP645, TIP646, TIP647 T-33-29 TIP640 lt 5234 IP645 DEJJ PDF

    TIP641

    Abstract: TIP640
    Text: TYPES TIP64Q. TIP641. TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 175 W at 25°C Case Temperature • Min hFE °f 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating device schematic TYPES TIP640, TIP641, TIP642 BULLETIN NO. OL-S 7111642, DECEMBER


    OCR Scan
    TIP64Q. TIP641. TIP642 TIP645, TIP646, TIP647 100-mJ TIP640, TIP641, TIP641 TIP640 PDF

    P647

    Abstract: TLP647 npn tip TIP640 TIP641 TIP642 TIP-641 3987 777T TIP645
    Text: SA N Y O NPN TIP640 TIP641 TIP642 SEMICONDUCTOR PNP TIP645 TIP646 TIP647 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan
    TIP640 TIP645 TIP641 TIP646 TIP642 TIP647 TIP640, TIP645 TIP641, TIP646 P647 TLP647 npn tip TIP-641 3987 777T PDF

    tlp641

    Abstract: IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating


    OCR Scan
    TIP640, TIP641. TIP64Z TIP645, TIP646, TIP647 100-mJ tlp641 IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646 PDF

    TLP647

    Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating


    OCR Scan
    TIP645, TIP646. TIP647 TIP640, TIP641, TIP642 TLP647 TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP645 TIP646 PDF

    TIP642

    Abstract: TIP641 TIP640 tlp641 lN914 TIP645 TIP646 TIP647 TIP64 TIP-640
    Text: TEXAS INSTR 8961726 -COPTO} TEXAS ^ 2 DE | a t t i v a t i INSTR COPTO 0D3bT7D 62C 3 6 9 7 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R EVISED O C TO BE R 1 9 8 4 T-33-29 Designed For Complementary use with TIP645, TIP646, TIP647


    OCR Scan
    TIP640, TIP641, TIP642 TIP645, TIP646, TIP647 T-33-29 TIP640 TIP641 TIP642 tlp641 lN914 TIP645 TIP646 TIP64 TIP-640 PDF

    TLP647

    Abstract: CP1205 TLP645 TIP645 TIP640 T1P646 TIP641 TIP642 TIP646 TIP647
    Text: Is TEX AS IN S TR -COPTO} m T| ooat.'m m 62C 36976 6 9 6 1 7 2 6 TEXAS INSTR <OPTO> TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 984 • Designed For Complementary Use With TIP640, TIP641, TIP642 • 175 W a t 25°C Case Temperature


    OCR Scan
    TIP645, TIP646, TIP647 TIP640, TIP641, TIP642 T-33-31 TIP645 T1P646 TIP647 TLP647 CP1205 TLP645 TIP640 TIP641 TIP642 TIP646 PDF

    lt 5237

    Abstract: lt 5236 LT 5238 TIP-641 T1P646 TIP645
    Text: INSTR Is -COPTO} 6961726 TEXAS INSTR m T| ooat.'m m 62 C 3 6 9 7 6 <OPTO> TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP640, TIP641, TIP642 • 175 W a t 25°C Case Temperature


    OCR Scan
    TIP645, TIP646, TIP647 TIP640, TIP641, TIP642 currTIP646, lt 5237 lt 5236 LT 5238 TIP-641 T1P646 TIP645 PDF

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


    OCR Scan
    LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck PDF